Thyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA

Transcription

1 Date: Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 5 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io io1 5-22io1 5-22io1 5-22io1 5-22io1 5-22io1 5-22io1 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage 1) 2-22 V V DSM Non-repetitive peak off-state voltage 1) 2-22 V V RRM Repetitive peak reverse voltage 1) 2-22 V V RSM Non-repetitive peak reverse voltage 1) V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current, T C = 8 C 2) 5 A I T(AV)M Maximum average on-state current. T C = 85 C 2) 46 A I T(AV)M Maximum average on-state current. T C = 1 C 2) 323 A I T(RMS)M Nominal RMS on-state current, T C = 55 C 2) 171 A I T(d.c.) D.C. on-state current, T C = 55 C 879 A I TSM Peak non-repetitive surge t p = 1 ms, V RM = 6%V RRM 3) 14. ka I TSM2 Peak non-repetitive surge t p = 1 ms, V RM 1V 3) 15.4 ka I 2 t I 2 t capacity for fusing t p = 1 ms, V RM = 6%V RRM 3) A 2 s I 2 t I 2 t capacity for fusing t p = 1 ms, V RM 1 V 3) A 2 s UNITS Critical rate of rise of on-state current (repetitive) 4) 15 A/µs (di/dt) cr Critical rate of rise of on-state current (non-repetitive) 4) 3 A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 4 W P GM Peak forward gate power 3 W V ISOL Isolation Voltage 5) 35 V T vj op Operating temperature range -4 to +125 C T stg Storage temperature range -4 to +15 C Notes: 1) De-rating factor of.13% per C is applicable for T vj below 25 C. 2) Single phase; 5 Hz, 18 half-sinewave. 3) Half-sinewave, 125 C T vj initial. 4) V D = 67% V DRM, I FG = 2 A, t r.5µs, T C = 125 C. 5) AC RMS voltage, 5 Hz, 1min test Rating Report. Types M##5-2io1 and M##5-22io1 Page 1 of 11 September, 25

2 Thyristor Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V TM Maximum peak on-state voltage I TM = 17 A V V TM Maximum peak on-state voltage I TM = 15 A V V T Threshold voltage V r T Slope resistance mω (dv/dt) cr Critical rate of rise of off-state voltage - - V D = 8% V DRM, linear ramp, Gate o/c V/µs I DRM Peak off-state current Rated V DRM ma I RRM Peak reverse current Rated V RRM ma V GT Gate trigger voltage T vj = 25 C, V D = 1 V, I T = 3 A V I GT Gate trigger current ma I H Holding current - - T vj = 25 C ma t gd Gate controlled turn-on delay time t gt Turn-on time I FG = 2 A, t r =.5 µs, V D = 67%V DRM, I TM = 2 A, di/dt = 1 A/µs, T vj = 25 C Q rr Recovered Charge µc Q ra Recovered Charge, 5% chord I TM = A, t p = 1 ms, di/dt = 1A/µs, µc I rm Reverse recovery current V R = 5 V A t rr Reverse recovery time, 5% chord µs t q R thjc R thch Turn-off time Thermal resistance, junction to case Thermal resistance, case to heatsink I TM = A, t p = 1 ms, di/dt = 1 A/µs, V R = 5 V, V DR = 8%V DRM, dv DR/dt = 2 V/µs I TM = A, t p = 1 ms, di/dt = 1 A/µs, V R = 5 V, V DR = 8%V DRM, dv DR/dt = 2 V/µs Single Thyristor K/W Whole Module K/W Single Thyristor K/W Whole Module K/W F 1 Mounting force (to heatsink) Nm F 2 Mounting force (to terminals) W t Weight kg 2) µs µs Nm Diode Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V FM Maximum peak forward voltage I TM = 17 A V V T Threshold voltage V r T Slope resistance mω I RRM Peak reverse current Rated V RRM ma Q rr Recovered Charge µc Q ra Recovered Charge, 5% chord I TM = A, t p = 1ms, di/dt = 1 A/µs, µc I rm Reverse recovery current V R = 5 V A t rr Reverse recovery time, 5% chord µs Notes: 1) Unless otherwise indicated T vj=125 C. 2) Screws must be lubricated Rating Report. Types M##5-2io1 and M##5-22io1 Page 2 of 11 September, 25

3 Notes on Ratings and Characteristics 1. Voltage Grade Table Voltage Grade V DRM V DSM V RRM V RSM V D V R V V DC V Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T vj below 25 C. 4. Repetitive dv/dt Standard dv/dt is V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 3A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 15A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page 2. Its duration (t p1 ) should be 2µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Rating Report. Types M##5-2io1 and M##5-22io1 Page 3 of 11 September, 25

4 8. Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations I AV 2 VT + VT + = 2 2 ff 4 ff r T 2 r T W AV and: W AV T = R T = T th j max T K Where V T =.88 V, r T =.46 mω, R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle d.c. Square wave Sine wave Form Factors Conduction Angle d.c. Square wave Sine wave Calculating V T /V F using ABCD Coefficients The on-state/forward characteristics, I T vs. V T, on pages 6 & 9 are represented in two ways; (i) the well established V T and r T tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. Thyristor coefficients 25 C 125 C A B C D Diode coefficients 25 C 125 C A B C D Rating Report. Types M##5-2io1 and M##5-22io1 Page 4 of 11 September, 25

5 8.3 D.C. Thermal Impedance Calculation p = n t = p= 1 Where p = 1 to n n = number of terms in the series t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. = Time Constant of r th term. τ p r r p 1 e t τ p The coefficients for this device are shown in the tables below: D.C. Term r p τ p Reverse recovery ratings (i) Q ra is based on 5% I rm chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15 µs integration time i.e. (iii) K Factor = t t 1 2 Q rr = 15µ s i rr. dt Rating Report. Types M##5-2io1 and M##5-22io1 Page 5 of 11 September, 25

6 Thyristor Curves Figure 1 On-state characteristics of Limit device Figure 2 Transient thermal impedance.1 Single Thyristor T j = 25 C T j = 125 C.1 Instantaneous On-state current - I TM (A) Thermal impedance (K/W) Instantaneous On-state voltage - V TM (V) Time (s) Figure 3 Gate characteristics - Trigger limits Figure 4 Gate characteristics Power curves 8 T j =25 C 35 T j =25 C Max V G dc 25 Max V G dc Gate Trigger Voltage - V GT (V) I GT, V GT Gate Trigger Voltage - V GT (V) 2 15 P G Max 3W dc C 25 C -1 C -4 C 1 1 I GD, V GD Min V G dc 5 P G 4W dc Min V G dc Gate Trigger Current - I GT (A) Gate Trigger Current - I GT (A) Rating Report. Types M##5-2io1 and M##5-22io1 Page 6 of 11 September, 25

7 Figure 5 Total recovered charge, Q rr Figure 6 Recovered charge, Q ra (5% chord) 2A 15A A 5A Recovered charge - Q rr (µc) Recovered charge - Q ra, 5% chord (µc) 2A 15A A 5A Figure 7 Peak reverse recovery current, I rm Figure 8 Maximum recovery time, t rr (5% chord) 1 Reverse recovery current - I rm (A) 1 2A 15A A 5A Reverse recovery time (5% chord) - t rr (µs) 1 2A 15A A 5A Rating Report. Types M##5-2io1 and M##5-22io1 Page 7 of 11 September, 25

8 Figure 9 On-state current vs. Power dissipation Sine wave Figure 1 On-state current vs. case temperature Sine wave Maximum forward dissipation (W) Maximum permissable heatsink temperature ( C) Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Power dissipation Square wave Mean forward current (A) (Whole cycle averaged) Figure 12 On-state current vs. case temperature Square wave Maximum forward dissipation (W) d.c Maximum permissible heatsink temperature ( C) d.c Mean Forward Current (Amps) (Whole Cycle Averaged) Mean Forward Current (Amps) (Whole Cycle Averaged) Rating Report. Types M##5-2io1 and M##5-22io1 Page 8 of 11 September, 25

9 Figure 13 Maximum surge and I 2 t Ratings Gate may temporarily lose control of conduction angle I 2 t: V RRM 1V 1.E+7 I 2 t: 6% V RRM Total peak half sine surge current (A) I TSM : V RRM 1V I TSM : 6% V RRM 1.E+6 Maximum I 2 t (A 2 s) T j (initial) = 125 C E+5 Duration of surge (ms) Duration of surge 5Hz) Diode curves Figure 14 Instantaneous forward voltage V F Figure 15 Transient thermal impedance.1 Single Diode.1 Instantaneous On-state current - I FM (A) T j = 125 C T j = 25 C Thermal impedance (K/W) Instantaneous On-state voltage - V FM (V).1 1E Time (s) Rating Report. Types M##5-2io1 and M##5-22io1 Page 9 of 11 September, 25

10 Figure 16 Total recovered charge, Q rr Figure 17 Recovered charge, Q ra (5% chord) 2A 15A Recovered charge - Q rr (µc) A 5A Recovered charge - Q ra, 5% chord (µc) 2A 15A A 5A Figure 18 Peak reverse recovery current, I rm Figure 19 Maximum recovery time, t rr (5% chord) 1 Reverse recovery current - I rm (A) 2A 15A A 5A Reverse recovery time (5% chord) - t rr (µs) 1 2A 15A A 5A Rating Report. Types M##5-2io1 and M##5-22io1 Page 1 of 11 September, 25

11 Outline Drawing & Ordering Information MCC MCD MDC MCA MCK MCDA MDCA ORDERING INFORMATION (Please quote 11 digit code as below) M ## 5 io 1 Fixed Type Code Configuration code CC, CD, DC, CA, CK, CDA, DCA Average Current Rating Order code: MCD5-2io1 MCD configuration, 2V V RRM Voltage code V RRM/ i = Critical dv/dt V/µs o = Typical turn-off time Fixed Version Code IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: Fax: marcom@ixys.de IXYS Corporation 354 Bassett Street Santa Clara CA 9554 USA Tel: +1 (48) Fax: +1 (48) sales@ixys.net IXYS WESTCODE An IXYS Company Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 () Fax: +44 () WSL.sales@westcode,com Westcode Semiconductors Inc 327 Cherry Avenue Long Beach CA 987 USA Tel: +1 (562) Fax: +1 (562) WSI.sales@westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. IXYS Semiconductor GmbH. Rating Report. Types M##5-2io1 and M##5-22io1 Page 11 of 11 September, 25