XPT IGBT phaseleg ISOPLUS Surface Mount Power Device

Transcription

1 dvanced Technical Information IX PGDHGLB XPT IGBT phaseleg ISOPLUS Surface Mount Power Device = S = (sat) typ = D S D S D D 9 Isolated surface to heatsink E787 IGBTs S, S Symbol Conditio Maximum Ratings S = C to C S ± T C = C 8 T C = 8 C M = ; R G = 6 W; K RBSO, clamped inductive load; L = µh t SC (SCSO) = 9 ; = ± ; R G = 6 W; none repetitive S µs P tot T C = C W Symbol Conditio Characteristic alues ( = C, unless otherwise specified) (sat) = ; = ; = C.8.. (th) =.6 m; =. 6. ES = S ; = ; = C µ µ I GES = ; = ± n t d(on) t r t d(off) Inductive load; 7 t f = 6 ; = E on = ± ; R G = 6 W. E (rec)off.7 C ies Q Gon = ; = ; f = MHz = 6 ; = ; = tbd 8 R thjc R thjh with heatsink compound (IXYS test setup) pf nc Features XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits Sonic diode - fast reverse recovery - low operating forward voltage - low leakage current sat detection diode - integrated into package - very fast diode Package - isolated back surface - low coupling capacity between pi and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability pplicatio Phaseleg - buck-boost chopper Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier Three phase bridge - C drives - controlled rectifier IXYS reserves the right to change limits, test conditio and dimeio. b IXYS ll rights reserved -

2 dvanced Technical Information IX PGDHGLB Diodes D, D Symbol Conditio Maximum Ratings I F I F8 T C = C T C = 8 C Symbol Conditio Characteristic alues ( = C, unless otherwise specified) F I F = = C I RM I t F = ; R G = 6 W; rr E R = 6 ; = - rec R thjc R thjh.. tbd per diode with heatsink compound (IXYS test setup) Equivalent Circuits for Simulation Conduction I R IGBTs (typ. at = ; T J ) S, S =. ; R = 9 mw Diodes (typ. at T J ) D, D =. ; R = mw Diodes D, D Symbol Conditio Maximum Ratings R T C = C to C Symbol Conditio Characteristic alues ( = C, unless otherwise specified) F I F = = C.7. I R R = = C I RM t rr I F = ; /dt = - /µs; = C R = ; =.. µ µ Component Symbol Conditio Maximum Ratings T stg ISOL I ISOL < m; /6 Hz ~ F C mounting force... N Symbol Conditio Characteristic alues C P coupling capacity between shorted pi and backside metal 9 pf d S, d d S, d pin - pin pin - backside metal.6 C C mm mm CTI Weight 8 g Ordering Ordering Name Marking on Product Delivering Mode Base Qty Ordering Code Standard IXPGDHGLB IXPGDHGLB Tape&Reel tbd IXYS reserves the right to change limits, test conditio and dimeio. b IXYS ll rights reserved -

3 dvanced Technical Information IX PGDHGLB Dimeio in mm ( mm =.9 ) (6x) ±, ), ±, +,,, ±, ±, ) 8 ±, 9 ±, (x) ±, ) (8 : ) ±, seating plane, ±, ±,,7 ±, ±,,8 ±,,7 ±,, ±,, ±, 6, ±, 9 ±, ), Notes: ) potrusion may add. mm max. on each side ) additional max.. mm per side by punching misalignement or overlap of dam bar or bending compression ) DCB area to µm convex; position of DCB area in relation to plastic rim: ± µm (measured mm from Cu rim) ) terminal plating:. - µm Ni + - µm Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, test conditio and dimeio. b IXYS ll rights reserved -

4 dvanced Technical Information IX PGDHGLB = = 7 9 [] = C [] 9 Fig. Typ. output characteristics Fig. Typ. output characteristics = = 6 [] = C Fig. Typ. tranfer characteristics 6 Q G [nc] Fig. Typ. turn-on gate charge R G = 6 Ω = 6 = ± E on.8. = = 6 = ± E [] E. [].6 E on [] Fig. Typ. switching energy vs. collector current R G [Ω] Fig. 6 Typ. switching energy vs. gate resistance IXYS reserves the right to change limits, test conditio and dimeio. b IXYS ll rights reserved -

5 dvanced Technical Information IX PGDHGLB R = 6 I F [] Q rr [µc] = C F Fig. 7 Typ. Forward current versus F 6 7 /dt [/µs] Fig. 8 Typ. reverse recov.charge Q rr vs. di/dt 7 I RR M R = 6 t rr 6 R = 6 [] [] 6 7 /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 6 7 /dt [/µs] Fig. Typ. recovery time t rr versus di/dt.. R = 6 E rec..8 [].6 Z thjc []. Diode IGBT /dt [/µs] Fig. Typ. recovery energy E rec versus di/dt.... t p [s] Fig. Typ. traient thermal impedance IXYS reserves the right to change limits, test conditio and dimeio. b IXYS ll rights reserved -