ST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)

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1 ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 6A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AC (B-PUK) Major Ratings and Characteristics Parameters ST333C..L Units I T(AV) 6 T hs 55 C I T(RMS) 230 T hs 25 C I 50Hz 0 60Hz A I 2 50Hz 605 KA2 60Hz 553 KA 2 s V DRM /V RRM to 0 V t q range 0 to 30 µs T J - to 25 C

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak T J V V ma 04 ST333C..L Current Carrying Capability Frequency I TM I TM I TM Units o el o el µs 50Hz Hz Hz A Hz Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt A/µs Heatsink temperature C Equivalent values for RC circuit 0Ω / 0.47µF 0Ω / 0.47µF 0Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 6 (305) A conduction, half sine Heatsink temperature 55 (75) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 0 t = 0ms No voltage non-repetitive surge current A t = 8.3ms reapplied 9250 t = 0ms % V RRM 9700 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 605 t = 0ms No voltage Initial T J max 553 t = 8.3ms reapplied 428 KA 2 s t = 0ms % V RRM 39 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 6050 KA 2 s t = 0. to 0ms, no voltage reapplied 2

3 On-state Conduction V TM Max. peak on-state voltage.96 I TM = 80A, T J max, t p = 0ms sine wave pulse V T(TO) Low level value of threshold 0.9 voltage V (6.7% x π x I T(AV) < I < π x I T(AV) ), T J V T(TO)2 High level value of threshold voltage 0.93 (I > π x I T(AV) ), T J r Low level value of forward t 0.58 slope resistance mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T J r t2 High level value of forward slope resistance 0.58 (I > π x I T(AV) ), T J I H Maximum holding current 600 ma T J = 25 C, I T > 30A I L Typical latching current 0 T J = 25 C, V A = 2V, Ra = 6Ω, I G = A Switching di/dt Max. non-repetitive rate of rise T J max, V DRM = rated V 0 A/µs DRM of turned-on current I TM = 2 x di/dt T J = 25 C, V DM = rated V DRM, I TM = 50A DC, t p = µs t Typical delay time. d Resistive load, Gate pulse: 0V, 5Ω source µs Min Max T J max, I TM = 550A, commutating di/dt = A/µs t q Max. turn-off time 0 30 V R = 50V, t p = µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T J linear to % V DRM, higher value V/µs off-state voltage available on request I RRM Max. peak reverse and off-state 50 ma T I DRM leakage current J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 60 P G(AV) Maximum average gate power 0 W T J, f = 50Hz, d% = 50 I GM Max. peak positive gate current 0 A T J max, t p 5ms +V GM Maximum peak positive gate voltage -V GM V T J max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T J = 25 C, V A = 2V, Ra = 6Ω T J max, rated V DRM applied 3

4 Thermal and Mechanical Specification T J Max. operating temperature range - to 25 T stg Max. storage temperature range - to 50 C R thj-hs Max. thermal resistance, 0. DC operation single side cooled K/W junction to heatsink 0.05 DC operation double side cooled R thc-hs Max. thermal resistance, 0.0 K/W DC operation single side cooled case to heatsink DC operation double side cooled F Mounting force, ± 0% 90 N (0) (Kg) wt Approximate weight 250 g Case style TO - AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side K/W T J Ordering Information Table Device Code ST 33 3 C 08 L H K Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-AC (B-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code dv/dt - t q combinations available dv/dt (V/µs) 50 0 CN DN EN = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 CM DM EM FM * -- = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) t (µs) q 5 CL DL EL FL * HL 8 CP DP EP FP HP 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) CK DK EK FK HK 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) FJ HJ HH 0 - Critical dv/dt: *Standard part number. None = V/µsec (Standard value) All other types available only on request. L = 0V/µsec (Special selection) 4

5 Outline Table 0.7 (0.03) MIN. 34 (.34) DIA. MAX. TWO PLACES 27 (.06) MAX. PIN RECEPTACLE AMP (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN (2.3 ) D IA. M AX. 4.7 (0.8) ± 5 2 HOLES DIA. 3.5 (0.4) x 2.5 (0.) DEEP CREPAGE DISTANCE (.430) MIN. STRIKE DISTANCE 7.43 (0.686) MIN (.44) Case Style TO-AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) Maximum Allowable Heatsink Temperature ( C) 30 (Single Side Cooled) 0 R th J-hs (DC) = 0. K/W 90 Conduction Angle Average On-state Current (A) M aximum Allowable Heatsink Tem perature ( C ) 30 ST3 33C..L Se rie s (Single Side Cooled) 0 R thj-h s(d C) = 0. K/W 90 Cond uction Period DC A ve rag e O n -state C urre nt (A ) Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5

6 Maximum Allow able Heatsink Temperature ( C ) 30 ST 333C..L Series (Double Side Cooled) 0 R thj-hs (D C ) = 0.05 K/W 90 Cond uction Angle Average On-state Current (A) Maxim um Allowable Heatsink Temperature ( C) 30 (Double Side C ooled) 0 R th J-hs (D C) = 0.05 K/W 90 Conduction Period DC Average O n-state C urrent (A) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle T J = 25 C Maximum Average On-state Power Loss (W) DC RMS Limit Conduction Period ST 333C..L Series T = 25 C J Average On-state Current (A) Average On-state Current (A) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At An y Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = Hz s 4 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) M axim um N on Repe titive Surg e C urre nt Ve rsus Pulse Train D uration. Co ntro l Of C on duction May Not Be Main tained. In it ia l T J = 2 5 C No Voltage Reapplied Rate d V RRM Reapplied ST3 33C..L Se rie s Pulse Train Duration (s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6

7 Instanta neous On-state Current (A) 00 0 T J = 25 C T J = 25 C Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transien t Therm al Im pedan ce Z th J-hs (K/ W) Ste ady State Value R thj-hs = 0. K/W (Single Side Cooled) R th J-hs = 0.05 K/W (Double Side Cooled) (DC O peration ) Square W ave Pulse D uration (s) Fig. 0 - Thermal Impedance Z thj-hs Characteristics Maximum Reverse Recovery Charge - Qrr (µc) I TM = 0 A A 300 A A A T = 25 C J Rate Of Fall Of On-state Current - di/dt (A/µs) M axim um Reve rse Rec ov ery C urre nt - Irr (A ) I TM = 0 A A 300 A A A T = 25 C J Rate Of Fall Of Forw ard Current - di/dt (A/µs) Fig. - Reverse Recovered Charge Characteristics Fig. 2 - Reverse Recovery Current Characteristics E4 Peak O n-state Current (A) E H z R s = 0 ohm s V D = % VDRM ST333C..L Se ries Sinuso idal pulse T = C C 0 E2 E E2 E3 E4 E4E E E2 E3 E4 R s = 0 ohms V D = % VDR M ST333C..L Se ries Sinusoidal pulse T = 55 C C Fig. 3 - Frequency Characteristics 7

8 Peak O n-state C urrent (A) E4 E3 R s = 0 ohm s V D = % VDRM 0 0 ST333C..L Se ries Trapezoidal pulse T C = C di/dt = 50A/µs R s = 0 ohms V D = % V DRM 0 0 E2 E E2 E3 E4 E4E E E2 E3 E4 Pulse Base w idth (µs) Tra pezoida l pulse T C = 55 C di/dt = 50A/µs Fig. 4 - Frequency Characteristics Pe ak O n -state C urren t (A ) E4 Snub ber circuit R s = 0 oh m s C s = 0.47 µ F V D = % V DRM 0 E ST333C..L Se ries Trap ezoid al pulse Tra pezoidal p ulse T C = C T C = 55 C di/d t = A/µs di/dt = A/µs E2 E E2 E3 E4 E4E E E2 E3 E4 R s = 0 ohm s V D = % V DRM Fig. 5 - Frequency Characteristics Pe ak O n-state Curre nt (A ) E5 E4 E3 E ST333C..L Serie s Sinusoidal pulse 2 0 jo ule s per p ulse Rectangular pulse di/dt = 50A/µs jo ules per pulse E E E2 E3 E4 E4E E E2 E3 E4 Pulse Base w idth (µs) Pulse Base w idth (µs) Fig. 6 - Maximum On-state Energy Power Loss Characteristics

9 Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt : V, 0ohms; tr<= µs b) Recommended load line for <=30% rated di/dt : 0V, 0ohms tr<= µs VGD Tj=25 C (b) Tj=25 C IGD Device: Frequency Limited by PG(AV) Tj=- C (a) Instantaneous Gate Current (A) () PGM = 0W, = ms (2) PGM = W, = 0ms (3) PGM = W, = 5ms (4) PGM = 60W, = 3.3ms () (2) (3) (4) Fig. 7 - Gate Characteristics 9

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