MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline
|
|
- Joy Owen
- 5 years ago
- Views:
Transcription
1 Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns I F(AV) = 30Amp V R = 00V Description/ Applications International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. Package Outline TO-47AC Absolute Maximum Ratings Parameters Max Units V RRM Peak Repetitive Peak Reverse Voltage 00 V I F(AV) Average Rectified Forward Current Per Leg 5 A Total Device, (Rated V R ), T C = 50 C Total Device 30 I FSM Non Repetitive Peak Surge Current Per Leg 00 I FM Peak Repetitive Forward Current Per Leg 30 (Rated V R, Square wave, 0 KHz), T C = 50 C T, T STG Operating unction and Storage Temperatures - 65 to 75 C
2 Electrical T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, V I R = 0µA Blocking Voltage V F Forward Voltage V I F = 5A V I F = 5A, T = 50 C I R Reverse Leakage Current - - µa V R = V R Rated µa T = 50 C, V R = V R Rated C T unction Capacitance pf V R = 00V L S Series Inductance - - nh Measured lead to lead 5mm. from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time ns I F =.0A, di F /dt = 50A/µs, V R = 30V - - T = 5 C T = 5 C I RRM Peak Recovery Current A T = 5 C I F = 5A V R = 60V di F /dt = 00A/µs T = 5 C Q rr Reverse Recovery Charge nc T = 5 C T = 5 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units T Max. unction Temperature Range to 75 C T Stg Max. Storage Temperature Range to 75 R thc Thermal Resistance, unction to Case Per Leg C/ W R tha! Thermal Resistance, unction to Ambient Per Leg " R thcs Thermal Resistance, Case to Heatsink Wt Weight g (oz) Mounting Torque Kg-cm lbf.in! Typical Socket Mount "# Mounting Surface, Flat, Smooth and Greased
3 Instantaneous Forward Current - I F (A) 0 T = 75 C T = 50 C T = 5 C Reverse Current - I R (µa) unction Capacitance - C T (pf) Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage 00 0 T = 75 C 50 C 5 C 0 C 5 C T = 5 C Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics 0 00 Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) D = 0.50 D = 0.0 P DM D = 0. D = 0.05 t D = D = 0.0 t Notes: Single Pulse. Duty factor D = t/ t (Thermal Resistance). Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z Characteristics thc 3
4 80 5 Allowable Case Temperature ( C) Square wave (D = 0.50) Rated Vr applied DC see note (3) Average Forward Current - IF (AV) (A) Average Power Loss ( Watts ) RMS Limit D = 0.0 D = 0.0 D = 0.05 D = 0. D = 0. D = 0.5 DC Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IF = 30 A IF = 5 A IF = 8 A 60 0 IF = 30 A IF = 5 A IF = 8 A V R = 60V T = 5 C T = 5 C trr ( ns ) 30 Qrr ( nc ) V R = 60V T = 5 C T = 5 C 0 00 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = rated V R 4
5 Reverse Recovery Circuit V R = 00V 0.0 Ω dif/dt F /dt ADUST L = 70µH G D IRFP50 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 3 0 I F t a trr t b I RRM Q rr I RRM di(rec)m/dt I RRM di f F /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions 5
6 Outline Table 5.90 (0.66) 5.30 (0.60) 3.65 (0.44) DIA (0.39) 5.30 (0.09) 4.70 ( 0.85).5 ( 0.098).5 ( 0.059) 0.30 (0.800) 5.70 (0.5) 5.30 ( 0.08) BASE COMMON CATHODE 9.70 (0.775) 5.50 ( 0.7) (0.77) ( PLCS.) 3 ANODE COMMON ANODE CATHODE ( 0.583) 4.0 (0.559) 4.30 (0.70) 3.70 (0.45).40 (0.056).00 (0.039). 94 ( 0.430).86 (0.47).0 (0.087) MAX..40 (0.095) MAX ( 0.03) (0.3) Conform to EDEC outline TO-47AC (TO-3P) Dimensions in millimeters and inches Ordering Information Table Device Code MUR 30 0 WT Ultrafast MUR Series (TO-47AC) - Current Rating (30 = 30A) 3 - Voltage Rating (0 = 00V) 4 - WT = Center Tap (Dual) TO-47 6
7 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9045, USA Tel: (3) 5-75 TAC Fax: (3) Visit us at for sales contact information. 05/0 7
8ETU04 8ETU04S 8ETU04-1
8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/
More information30ETH06 30ETH06S 30ETH06-1
Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
More information150EBU04. Ultrafast Soft Recovery Diode. t rr = 60ns I F(AV) = 150Amp V R = 400V. Bulletin PD rev. B 02/06
Ultrafast Soft Recovery Diode 50EBU04 Features Ultrafast Recovery 75 C Operating unction Temperature Screw Mounting Only Lead-Free Plating Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
More informationMURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline
MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications
More information60EPU02PbF 60APU02PbF
Bulletin PD-079 08/05 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
More informationMUR1620CT MURB1620CT MURB1620CT-1
Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/
More information15ETL06PbF 15ETL06FPPbF
Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
More information60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01
Bulletin PD-0745 rev. D 07/0 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced
More information60EPU04PbF 60APU04PbF
Bulletin PD-080 08/05 60EPU04PbF 60APU04PbF Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency
More informationHFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A
PD - 9469A HEXFRED TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount Ultrafast, Soft Recovery Diode V R = 200V I F(AV) = 20A t rr
More informationHFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA
PD - 94223B HFB6HY20CC FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets V R = 200V I F(AV) =
More informationUltrafast, Soft Recovery Diode. Base Cathode Anode N/C
HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in
More informationTO-220AC. 1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
More informationUltrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE
Bulletin PD -.364 rev. B /00 HEXFRED TM HF6PB0 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationUltrafast, Soft Recovery Diode BASE CATHODE CATHODE
Bulletin PD -.9 rev. /00 HEXFRED TM HF5TB60 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationHFA35HB120C PD-20371E. Ultrafast, Soft Recovery Diode FRED. 1 V R = 1200V I F(AV) = 15A. Q rr = 370ns CASE STYLE TO-254AA
PD-2037E H35HB20C RED Ultrafast, Soft Recovery Diode eatures Reduced RI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets I (V) = 5 Q rr = 370ns Description
More informationHyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single
More informationUltrafast Rectifier, 2 x 15 A FRED Pt
Ultrafast Rectifier, x 5 FRED Pt TO-47C PRODUCT SUMMRY 3 node Base common cathode 3 Common cathode node Package TO-47C I F(V) x 5 V R 00 V V F at I F 0.85 V t rr typ. See Recovery table T J max. 75 C Diode
More informationIRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More information50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
More informationIRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationSMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units
SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More informationUltrafast, Soft Recovery Diode BASE CATHODE CATHODE
Bulletin PD -.9 rev. /00 HEXFRED TM HF5TB60 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationIRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More information20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.
5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED
More informationUltrafast Rectifier, 16 A FRED Pt
Ultrafast Rectifier, 6 FRED Pt 4 TO-220B 2 3 Base common cathode 4 2 Common node cathode node 3 FETURES Ultrafast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage
More informationParameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More informationIRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
More informationECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units
IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
More informationIRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationIRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
More informationIRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature Low leakage current
More information=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)
PD- 94117 IRGP2B12U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT UltraFast Non Punch Through (NPT) Technology 1 µs Short Circuit capability Square RBSOA Positive V CE (on) Temperature Coefficient
More informationHyperfast Rectifier, 2 x 15 A FRED Pt
Hyperfast Rectifier, 2 x 5 FRED Pt 3L TO-220B PRIMRY CHRCTERISTICS Base common cathode 2 2 Common node cathode node 3 Package 3L TO-220B I F(V) 2 x 5 V R 300 V V F at I F 0.85 V t rr typ. See Recovery
More informationAbsolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More informationHyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low
More informationHyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES Hyperfast soft recovery time Low forward voltage drop 75 C operating junction temperature Low leakage
More informationSingle Phase Fast Recovery Bridge (Power Modules), 61 A
VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single
More informationHyperfast Rectifier, 30 A FRED Pt
VS-30ETH06SPbF, VS-30ETH06-PbF Hyperfast Rectifier, 30 FRED Pt FETURES Hyperfast recovery time Low forward voltage drop 3 D PK (TO-63) ase cathode 3 TO-6 Low leakage current 75 C operating junction temperature
More informationIRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationn-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
More informationIRGB4062DPbF IRGP4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 75 C 5 µs short circuit SOA Square RBSOA
More informationUltrafast Rectifier, 8 A FRED Pt
8 FRED Pt VS-8ETU04SPbF N/C ase cathode 1 3 D PK PRODUCT SUMMRY t rr I F(V) V R node VS-8ETU04-1PbF 1 3 N/C node TO-6 60 ns 8 400 V FETURES Ultrafast recovery time Low forward voltage drop Low leakage
More informationIRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction
More informationIRG7PH35UDPbF IRG7PH35UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature
More informationFEATURES DESCRIPTION APPLICATIONS
Ultralow V F Hyperfast Rectifier for Discontinuous Mode PFC, 5 FRED Pt 3 2L TO-22C 2 FETURES Hyperfast recovery time Benchmark ultralow forward voltage drop 75 C operating junction temperature Low leakage
More informationIRGB30B60K IRGS30B60K IRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature
More informationIRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark
More informationIRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.
PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
More informationT..HFL SERIES 40 A 70 A 85 A. FAST RECOVERY DIODES T-Modules. Features. Description. Major Ratings and Characteristics. Bulletin I27107 rev.
Bulletin 277 rev. B 09/06 T..HFL SERES FAST REOVERY DODES T-Modules Features Fast recovery time characteristics Electrically isolated base plate V RMS isolating voltage Standard JEDE package Simplified
More informationIRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. μs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIRG7PH42UDPbF IRG7PH42UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature
More informationVS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I
More informationUltrafast Rectifier, 2 x 30 A FRED Pt
Ultrafast Rectifier, x 30 FRED Pt TO-47 PRODUT SUMMRY node Base common cathode 3 ommon cathode node Package TO-47 I F(V) x 30 V R 400 V V F at I F 0.9 V t rr typ. 37 ns T J max. 75 Diode variation ommon
More informationECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units
Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse
More informationIRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
More informationIRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features
PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE
More information± 20 Transient Gate-to-Emitter Voltage
IRGSDPbF V CES = V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE I C.A, T C = C C C t sc > µs, T jmax = 7 C V CE(on) typ..7v Applications Appliance Motor Drive Inverters SMPS Features
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt TO-63 (D PK) ase cathode 1 3 N/C node VS-8ETU04SHM3 PRODUCT SUMMRY N/C TO-6 1 3 node Package TO-63 (D PK), TO-6 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max.
More informationIRGP20B120UD-E. UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93817 IRGP2B12UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast Non Punch Through (NPT) Technology Low Diode V F (1.67V Typical @ 2A
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationUltrafast Rectifier, 2 x 15 A FRED Pt
Ultrafast Rectifier, x 5 FRED Pt ommon cathode, Base FETURES Ultrafast recovery time Low forward voltage drop 75 operating junction temperature 3 TO-47 3L node 3 node Low leakage current Designed and qualified
More information225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More informationHyperfast Rectifier, 2 x 15 A FRED Pt
Hyperfast Rectifier, x 5 FRED Pt VS-30CTH0SPbF ase Common Cathode Common Cathode 3 node node D PK PRODUCT SUMMRY t rr (maximum) I F(V) V R VS-30CTH0-PbF ase Common Cathode Common Cathode 3 node node TO-6
More informationIRGP30B120KD-E. Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93818A IRGP3B12KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features Low V CE (on) Non Punch Through (NPT) Technology Low Diode V F (1.76V Typical
More informationIRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
More informationIRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
More information225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
More informationA I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More information5SDF 06D2504 Old part no. DM
Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO
More informationn-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF
IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square
More informationUltrafast Rectifier, 2 x 8 A FRED Pt
VS-MUR60CT-M3, VS-MUR60CT--M3 Ultrafast Rectifier, x 8 FRED Pt 3 D PK (TO-63) node ase common cathode 3 Common cathode node VS-MUR60CT-M3 3 node PRIMRY CHRCTERISTICS TO-6 ase common cathode 3 Common cathode
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rugged dual rectifier diodes in a plastic envelope, featuring low BYV32E- 0 200 forward voltage
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationHyperfast Rectifier, 30 A FRED Pt
VS-30CTH0S-M3, VS-30CTH0--M3 Hyperfast Rectifier, 30 FRED Pt 3 D PK (TO-63) ase Common Cathode Common Cathode 3 node node VS-30CTH0S-M3 3 PRIMRY CHRCTERISTICS TO-6 ase Common Cathode Common Cathode 3 node
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor
PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized
More informationAbsolute Maximum Ratings
IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
More informationIRGP4063DPbF. n-channel
1 www.irf.com 5/11/6 现货库存 技术资料 百科信息 热点资讯, 精彩尽在鼎好! INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction
More informationUltrafast Rectifier, 8 A FRED Pt
VS-8ETU04S-M3, VS-8ETU04-1-M3 Ultrafast Rectifier, 8 FRED Pt 1 3 D PK (TO-63) ase cathode 1 3 N/C node VS-8ETU04S-M3 1 3 PRIMRY CHRCTERISTICS TO-6 N/C 1 3 node I F(V) 8 V R 400 V V F at I F 0.94 V t rr
More informationIRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationIRGPC40UD2 UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD - 9.88A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
More informationVS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS
Ultralow V F Ultrafast Rectifier, 5 FRED Pt FETURES TO-252 (D-PK) N/ 2, 4 3 node Ultrafast recovery time, extremely low V F and soft recovery 75 maximum operating junction temperature For PF DM operation
More informationDATA SHEET. BYV2100 Fast soft-recovery controlled avalanche rectifier DISCRETE SEMICONDUCTORS. Product specification 1996 Oct 07. handbook, 2 columns
DISCRETE SEMICONDUCTORS DATA SHEET handbook, columns M3D6 BYV 996 Oct 7 BYV FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy
More informationAbsolute Maximum Ratings
IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
More informationUltrafast Soft Recovery Diode, 60 A FRED Pt
Ultrafast Soft Recovery Diode, 60 FRED Pt FETURES Ultrafast recovery time 3 2 TO-247D 2L athode to base 2 3 athode node Low forward voltage drop 75 operating junction temperature Designed and qualified
More informationPINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV32F- 0 50 200
More information5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing
5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =
More informationSMPS MOSFET. V DSS R DS(on) max (mω)
P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche
More informationPINNING - SOT199 PIN CONFIGURATION SYMBOL. case a1
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV72F 5 2 forward
More informationRectifier Diode 5SDD 11D2800
V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability
More information5SDD 36K5000 Old part no. DV 889B
Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward
More informationSTARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package
STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationSTTH1R04. Ultrafast recovery diode. Description. Features
STTH1R4 Ultrafast recovery diode Datasheet - production data DO-41 STTH1R4 A K DO-15 STTH1R4Q Band indicates cathode side. Description The STTH1R4 series uses ST's new 4 V planar Pt doping technology.
More informationCID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BYV34 300 400
More information