Inverter Grade Thyristors (Hockey PUK Version), 720 A

Transcription

1 Inverter Grade Thyristors (Hockey PUK Version), 7 A VS- E-PUK (TO-0AB) PRIMARY CHARACTERISTICS Package E-PUK (TO-0AB) Circuit configuration Single SCR I T(AV) 7 A V DRM /V RRM V, 0 V V TM 1.96 V I TSM at 50 Hz A I TSM at 60 Hz A I GT 0 ma T C /T hs 55 C FEATURES Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt International standard case E-PUK (TO-0AB) High surge current capability Low thermal impedance High speed performance Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 7 A I T(AV) T hs 55 C 1435 A I T(RMS) T hs 25 C 50 Hz I TSM A 60 Hz I 2 t 50 Hz Hz 553 ka 2 s V DRM /V RRM to 0 V t q Range to 30 μs T J -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST333C..C VOLTAGE CODE V DRM /V RRM, MAXIMUM REPETITIVE PEAK VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V I DRM /I RRM MAXIMUM AT T J = T J MAXIMUM ma 50 Revision: 13-Sep-17 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS- CURRENT CARRYING CAPABILITY FREQUENCY I TM I TM I TM UNITS 1 el 1 el µs 50 Hz Hz A 0 Hz Hz Recovery voltage V r V Voltage before turn-on V d V DRM V DRM V DRM Rise of on-state current di/dt A/µs Heatsink temperature C Equivalent values for RC circuit /0.47 /0.47 /0.47 /µf ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current 1 conduction, half sine wave 7 (350) A I T(AV) at heatsink temperature Double side (single side) cooled 55 (75) C Maximum RMS on-state current I T(RMS) DC at 25 C heatsink temperature double side cooled 1435 t = ms No voltage Maximum peak, one half cycle, t = 8.3 ms reapplied A I TSM non-repetitive surge current t = ms % V RRM 9250 t = 8.3 ms reapplied Sinusoidal half wave, 9700 t = ms No voltage initial T J = T J maximum 605 Maximum I 2 t for fusing I 2 t t = 8.3 ms reapplied 553 t = ms % V RRM 428 ka 2 s t = 8.3 ms reapplied 391 Maximum I 2 t for fusing I 2 t t = 0.1 to ms, no voltage reapplied 6050 ka 2 s Maximum peak on-state voltage V TM I TM = 18 A, T J = T J maximum, t p = ms sine wave pulse 1.96 Low level value of threshold voltage V T(TO)1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.91 V High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum 0.93 Low level value of forward slope resistance r t1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.58 High level value of forward slope resistance r t2 (I > x I T(AV) ), T J = T J maximum 0.58 m Maximum holding current I H T J = 25 C, I T > 30 A 600 Typical latching current I L T J = 25 C, V A = 12 V, R a = 6, I G = 1 A 0 ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES MIN. MAX. UNITS Maximum non-repetitive rate of rise of turned on current di/dt T J = T J maximum, V DRM = Rated V DRM ; I TM = 2 x di/dt 0 A/µs T Typical delay time t J = 25 C, V DM = Rated V DRM, I TM = 50 A DC, t p = 1 μs d Resistive load, gate pulse: V, 5 source 1.1 I TM = 550 A, commutating di/dt = 40 A/μs 30 T J = T J maximum, µs q V R = 50 V, t p = 500 μs, dv/dt: See table in device code Revision: 13-Sep-17 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS- BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current dv/dt T J = T J maximum, linear to % V DRM, higher value available on request 500 V/µs I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 50 ma TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM 60 T J = T J maximum, f = 50 Hz, d% = 50 Maximum average gate power P G(AV) W Maximum peak positive gate current I GM A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms Maximum peak negative gate voltage -V GM 5 V Maximum DC gate current required to trigger I GT 0 ma T J = 25 C, V A = 12 V, R a = 6 Maximum DC gate voltage required to trigger V GT 3 V Maximum DC gate current not to trigger I GD ma T J = T J maximum, rated V DRM applied Maximum DC gate voltage not to trigger V GD 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating temperature range T J -40 to +125 Maximum storage temperature range T Stg -40 to +150 C DC operation single side cooled 0.09 Maximum thermal resistance, junction to heatsink R thj-hs DC operation double side cooled 0.04 DC operation single side cooled 0.0 Maximum thermal resistance, case to heatsink R thc-hs DC operation double side cooled 0.0 K/W Mounting force, ± % 90 (0) Approximate weight 83 g Case style See dimensions - link at the end of datasheet E-PUK (TO-0AB) N (kg) R thj-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE TEST CONDITIONS T J = T J maximum Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC UNITS K/W Revision: 13-Sep-17 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS- Maximum Allowable Heatsink Temperature ( C) 130 (Single Side Cooled) 1 R th J-hs (DC) = 0.09 K/W 90 Conduction Angle Average On-state Current (A) Maximum Allowable Heatsink Temperature ( C) 130 (Double Side Cooled ) 1 R (DC) = 0.04 K/W th J-hs 90 Conduction Period DC Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Tem perature ( C) 130 ST333C..C Series (Single Side C ooled) 1 R th J-hs (D C) = 0.09 K/W 90 Cond uction Period DC A ve rag e O n -state C urre nt (A ) Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle ST333 C..C Serie s 0 T J = 125 C Average O n-state C urren t (A) Fig. 5 - On-State Power Loss Characteristics Maximum Allowable Heatsink Temperature ( C) 130 ST333 C..C Series (D ouble Side C ooled) 1 R thj-h s (D C ) = 0.04 K/W Conduction Angle Average O n-state C urrent (A) Fig. 3 - Current Ratings Characteristics Maxim um Average On-state Pow er Loss (W ) DC 1 30 RMS Limit Conduction Period T = 125 C J Average O n-state C urren t (A) Fig. 6 - On-State Power Loss Characteristics Revision: 13-Sep-17 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS- Peak Half Sine Wave On-state Current (A) At An y Rated Load Con dition And With Rated V RRMApplied Following Surge. Initial T J = Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Transient Therm al Im peda nce Z thj-hs (K/W ) ST333C..C Series Steady State Value R th J -hs = 0.09 K /W (Sin gle Side C ooled) R thj-h s = 0.04 K /W (D ouble Side C ooled) (D C Operation) Sq u a re W a v e P u ls e D ur at io n ( s) Fig. - Thermal Impedance Z thj-hs Characteristics Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. C ontrol Of Conduction May Not Be Maintained. Initial T J = 125 C No Voltage Reapplied Rated V RRMReapplied Pulse Train Duration (s) Maximum Reverse Recovery Charge - Qrr (µc) I TM = 500 A 300 A 0 A A 50 A T = 125 C J Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig Reverse Recovered Charge Characteristics Instantaneous On-state Current (A) 00 0 T = 25 C J T = 125 C J Instantaneous On-state Voltage (V) M axim um Reve rse Rec ove ry C urren t - Irr (A ) I TM = 5 00 A 300 A 0 A A 50 A ST333C..C Series T = 125 C J Rate Of Fall O f Fo rw ard C urren t - di/d t (A /µs) Fig. 9 - On-State Voltage Drop Characteristics Fig Reverse Recovery Current Characteristics Revision: 13-Sep-17 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS- 1E4 Peak On-state Current (A) 1E Hz 1E2 500 Pulse Basewidth (µs) 0 V D = % VDRM Sinusoidal pulse T = 40 C C 0 50 Hz Pulse Basew idth (µs) V D = % V DRM Sinusoidal pulse T C = 55 C Fig Frequency Characteristics Peak On-state C urrent (A) 1E4 1E Hz Trap ezoid al p ulse T C = 40 C di/dt = 50A/µs 1E2 Pulse Basewidth (µs) V D = % VDRM V D = % VDRM Hz Trapezo idal p ulse T C = 55 C di/dt = A/µs 1E 1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig Frequency Characteristics Peak O n-state Curre nt (A ) 1E Hz E3 00 V D = % VDRM Trapezoidal pulse T C = 40 C d i/dt = A/µs 1E2 Pulse Basew idth (µs) V D = % V DR M 50 Hz Trapezo id al p ulse T C = 55 C di/dt = A/µs Pulse Basew idth (µs) Fig Frequency Characteristics Revision: 13-Sep-17 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS- Peak On-state Current (A) 1E4 1E3 1E2 0.2 ST333C..C Series Sinusoidal pulse joules per p ulse E1 1E4 Pulse Basewidth (µs) Pulse Basew idth (µs) Fig Maximum On-State Energy Power Loss Characteristics t p ST3 33 C Se ries joules per pulse Rec tang ula r pulse di/dt = 50A/µs Instantan eous G ate Vo ltage (V) 1 Rectangular gate pulse a ) R e c o m m e n d e d lo a d lin e fo r rated di/dt : V, ohms; tr<=1 µs b ) Re c o m m e n d e d lo a d lin e f o r <=30% rated di/dt : V, ohms tr<=1 µs VGD Tj=125 C (b) Tj=25 C IG D Device: ST333C..C Series Frequen cy Limited by PG(AV ) Tj=-40 C (a) Instantane ous G ate C urrent (A ) (1) PGM = W, = m s (2) PGM = W, = m s (3) PGM = 40W, = 5m s (4) PGM = 60W, = 3.3ms (1) (2) (3 ) (4) Fig Gate Characteristics Revision: 13-Sep-17 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS- ORDERING INFORMATION TABLE Device code VS- ST 33 3 C 08 C H K product - Thyristor - Essential part number - 3 = fast turn off - C = ceramic PUK - Voltage code x = V RRM (see Voltage Ratings table) - C = PUK case E-PUK (TO-0AB) dv/dt - t q combinations available - Reapplied dv/dt code (for t q test condition) - t q code - 0 = eyelet terminal 12 CM DM EM FM* -- (gate and aux. cathode unsoldered leads) 15 CL DL EL FL* HL t q (µs) 18 CP DP EP FP HP 1 = fast-on terminal CK DK EK FK HK (gate and aux. cathode unsoldered leads) FJ HJ HH 2 = eyelet terminal * Standard part number. (gate and aux. cathode soldered leads) All other types available only on request. dv/dt (V/µs) 50 0 CN DN EN = fast-on terminal (gate and aux. cathode soldered leads) - Critical dv/dt: None = 500 V/μs (standard value) L = 0 V/μs (special selection) Dimensions LINKS TO RELATED DOCUMENTS Revision: 13-Sep-17 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Outline Dimensions E-PUK (TO-0AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. C G 14.1/15.1 (0.56/0.59) A 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 0.3 (0.01) MIN (1.59) DIA. MAX. Note: A = Anode C = Cathode G = Gate 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 ± 5 42 (1.65) MAX. 28 (1.) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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