Teccor brand Thyristors Silicon Controlled Rectifiers

Transcription

1 Description New device series offers high static dv/dt and lower turn off (t q ) sensitive SCR with its small die planar construction SCRs junctions are glass-passivated to ensure long term reliability and parametric stability. Features Main Features Symbol Value Unit I T(RMS) 0.8 V DRM /V RRM 400 to 800 V I 5 to 200 μ mount packages capability > 10mps ( V DRM / V RRM ) capability - up to 800V Schematic Symbol q ) < 25 μsec microprocessor interface pplications x applications. G K bsolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) I T(V) I TSM I 2 t RMS on-state current (full sine wave) verage on-state current Non repetitive surge peak on-state current (Single cycle, initial = 25 C) I 2 t Value for fusing TO-92 T C = 55 C 0.8 SOT-89 T C = 60 C 0.8 SOT-223 T L = 60 C 0.8 TO-92 T C = 55 C 1 SOT-89 T C = 60 C 1 SOT-223 T L = 60 C 1 TO-92 SOT-89 SOT-223 F= 50Hz 8 F= 60Hz 10 t p = 10 ms F = 50 Hz s t p = 8.3 ms F = 60 Hz s di/dt Critical rate of rise of on-state current I = 10m TO-92 SOT-89 = 125 C 50 /μs SOT-223 I t p = 10 μs = 125 C 1.0 P verage gate power dissipation = 125 C 0.1 W T stg Storage junction temperature range -40 to 150 Operating junction temperature range -40 to 125 C 145

2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Limit SxX8xxx S1 S2 S Unit I V D = 6V R L = 100 Ω MIN μ MX μ V V D = 6V R L = 100 Ω MX. 0.8 V V I = 10μ MIN. 5 V I H Holding Current R = 1 KΩ MX. 5 m (dv/dt)s Critical Rate-of-Rise of Off-State Voltage = 125 C V D = V DRM /V RRM Exp. Waveform R =1 kω MIN. 75 V/μs t q Turn-Off Time = V R =1 kω MX μs t gt Turn-On Time I =10m PW = 15μsec I T = 1.6(pk) MX μs Static Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit V TM Peak On-State Voltage I TM = 1.6 (pk) MX V I DRM Off-State Current, Peak Repetitive = 25 V D = V DRM R =1 kω = 125 VD = V DRM R =1 kω MX. 3 μ MX. 500 μ Thermal Resistances Symbol Description Test Conditions Value Unit TO C/W R th(j-c) Junction to case (C) I T = 0.8 (RMS) 1 SOT C/W SOT C/W TO C/ W R th(j-a) Junction to ambient I T = 0.8 (RMS) 1 SOT C/W SOT C/W 1 60Hz C resistive load condition, 100% conduction. 146 Power Thyristor Databook 2008 Littelfuse

3 Figure 1: Normalized DC Gate Trigger Current For ll Quadrants vs. Junction Temperature Figure 2: Normalized DC Holding Current vs. Junction Temperature I GT I GT ( = 25 C) 1.0 I H I H ( = 25 C) 2.0 Ratio of Ratio of Junction Temperature ( ) - C Junction Temperature ( ) - C Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: Power Dissipation (Typical) vs. RMS On-State Current Gate Trigger Voltage (V GT ) - V Junction Temperature ( ) - C verage On-state Power Dissipation [P ] - Watts D(V) CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 o RMS On-state Current [I T(RMS) ] - mps Figure 5: Maximum llowable Case Temperature vs. On-State Current 130 CURRENT WVEFORM: Sinusoidal Maximum llowable Case Temperature (T C ) - o C TO-92 LOD: Resistive or Inductive CONDUCTION NGLE: 180 o CSE TEMPERTURE: Measured as shown on dimensional drawings SOT-223 & SOT RMS On-state Current [I T(RMS) ] - mps 147

4 Figure 6: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (ITSM) mps Surge Current Duration - Full Cycle 0.8 Devices Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T S(max) to T L - Ramp-up Rate 5 C/second max Reflow - Temperature (T L ) (Liquidus) 217 C - Time (min to max) (t s ) Peak Temperature (T P ) /-5 C Time within 5 C of actual peak Temperature (t p ) Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C 148 Power Thyristor Databook 2008 Littelfuse

5 Physical Specifications Reliability/Environmental Tests Terminal Finish Body Lead Material Design Considerations 100% Matte Tin-plated. UL recognized epoxy meeting flammability classification 94V-0. Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Thermal Shock utoclave Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 110 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750, M cycles; 0 C to 100 C; 5-min dwelltime at each temperature; 10 sec (max) transfer time between temperature EI / JEDEC, JESD hours (121 C at 2 TMs) and 100% R/H MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E Dimensions TO-92 Dimensions Inches Millimeters Min Typ Max Min Typ Max B C D E F H I J

6 Dimensions SOT (0.059 ) 1.5 (0.059 ) 1.2 (0.047 ) (3x) 3.3 (0.130 ) 2.3 (0.091 ) 4.6 (0.181 ) Dimensions in Millimeters (Inches) Recommended Soldering Footprint for SOT (0.252 ) Inches Millimeters Dimensions Min Typ Max Min Typ Max B C D E F H I J K 10 MX Dimensions SOT-89 J Tc Measuring Point C B D H E F G Dimension Inches Millimeters Min Typ Max Min Typ Max Pad Layout for SOT-89 (2.21).087 (1.12).044 B C D E (3.91).154 F (1.19).047 (0.91).036 (1.63) (1.63) Dimensions in Millimeters (Inches) H I J Power Thyristor Databook 2008 Littelfuse

7 Product Selector Voltage Part Number 400V 600V 800V Gate Sensitivity Package S4X8ES X 200 μ TO-92 S6X8ES X 200 μ TO-92 S8X8ES X 200 μ TO-92 S4X8TS X 200 μ SOT-223 S6X8TS X 200 μ SOT-223 S8X8TS X 200 μ SOT-223 S4X8BS X 200 μ SOT-89 S6X8BS X 200 μ SOT-89 S4X8ES1 X 5 μ TO-92 S6X8ES1 X 5 μ TO-92 S8X8ES1 X 5 μ TO-92 S4X8TS1 X 5 μ SOT-223 S6X8TS1 X 5 μ SOT-223 S8X8TS1 X 5 μ SOT-223 S4X8ES2 X 50 μ TO-92 S6X8ES2 X 50 μ TO-92 S8X8ES2 X 50 μ TO-92 S4X8TS2 X 50 μ SOT-223 S6X8TS2 X 50 μ SOT-223 S8X8TS2 X 50 μ SOT-223 Packing Options Part Number Marking Weight Packing Mode Base Quantity SxX8ESy SxX8ESy 0.170g Bulk 2500 SxX8ESyP SxX8ESy 0.170g mmo Pack 2000 SxX8ESyRP SxX8ESy 0.170g Tape & Reel 2000 SxX8TSyRP SxX8TSy 0.120g Tape & Reel 1000 SxX8BSRP xx g Tape & Reel 1000 Note: x = voltage, y = gate sensitivity 151

8 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Meets all EI-468-B 1994 Standards 1.6 (41.0) (6.0) 0.02 () (2.5) MX 1.26 (32.0) (18.0) (9.0) (12.7) 0.1 (2.54) 14.17(360.0) MT1 / Cathode MT2 / node 0.2 (5.08) Gate DI (4.0) Flat up 1.97 (50.0) Direction of Feed Dimensions are in inches (and millimeters). TO-92 (3-lead) mmo Pack (P) Radial Leaded Meets all EI-468-B 1994 Standards 1.62 (41.2) (18.0) (6.0) 0.02 () (9.0) (12.7) Direction of Feed 0.1 (2.54) MT2 / node MT1 / Cathode 0.2 (5.08) Gate (2.5) MX DI (4.0) Flat down 1.27 (32.2) 25 Devices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) Dimensions are in inches (and millimeters) (338.0) 152 Power Thyristor Databook 2008 Littelfuse

9 Tape & Reel Specifications for SOT-89 Ø1.5 mm 4 mm 8 mm 2 mm NODE 1.75 mm 12 mm 5.5 mm GTE NODE CTHODE 180 mm 13 mm bor Hole Diameter 13.4 mm DIRECTION OF FEED Tape & Reel Specifications for SOT-223 Ø1.5 mm 4 mm 8 mm 2 mm NODE 1.75 mm 12 mm 5.5 mm GTE NODE CTHODE 180 mm 13 mm bor Hole Diameter 13.4 mm DIRECTION OF FEED Part Numbering System Part Marking System SERIES S: SCR VOLTGE 4: 400V 6: 600V 8: 800V CURRENT X8: 0.8 SxX8 x xx xx PCKING TYPE Blank: Bulk Pack RP: Reel Pack (TO-92) Embossed Carrier Pack (SOT-223) Embossed Carrier Pack (SOT-89) P: mmo Pack (TO-92) SENSITIVITY & TYPE S1: 5μ Sensitive SCR S2: 50μ Sensiive SCR S: 200μ Sensitive SCR K DC Date Code (2 Digits Min.) Number = Year Letter = Month K G PCKGE TYPE E: TO-92 T: SOT-223 B: SOT-89 G 153