SP8008 Series Diode Array
|
|
|
- Gerard Scott
- 5 years ago
- Views:
Transcription
1 SP88 Series Diode Array RoHS Pb GRN Description The SP88 integrates eight channels of ultra low capacitance common mode protection for electronic equipment exposed to electrostatic discharges (SD. This robust component can effectively protect against SD events exceeding the IC contact SD level of ±8 kv without any performance degradation. The extremely low off-state capacitance of this component makes it ideal for protecting high speed signal pins such as V-by-One, mbedded DisplayPort, HDMI 1. through 2.1 and USB 2./3./3.1. Pinout Features SD, IC , +3kV/-23kV contact, +3kV/-23kV air FT, IC , 4A (t P =5/5ns Lightning, IC nd edition, 4A (t P =8/2μs Low capacitance 3GHz (TYP per I/O 5634 N Menard Ave, Low leakage current of.5μa (MAX at 5V Small form factor μdfn packages (JDC MO- 229 saves board space and supports straightthrough routing of the data lines. Halogen free, Lead free and RoHS compliant UL Recognized compound meeting flammability rating V- AC-Q11 qualified Functional Block Diagram Applications LCD/PDP TVs LCD/LD Monitors Notebook Computers Ultrabooks Automotive Displays Flat Panel Displays Digital Signage HD Cameras/Projectors USB and HDMI interfaces Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
2 Absolute Maximum Ratings Symbol Parameter Value Units Peak Current (t p =8/2μs 4. A T OP Operating Temperature -4 to 125 C T STOR Storage Temperature -55 to 15 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. lectrical Characteristics (T OP =25ºC Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1μA 5 V Breakdown Voltage V BR I R =1mA 6 V Reverse Leakage Current I LAK V R =5V, I/O to GND.5 µa Clamp Voltage 1 V C =1A, t P =8/2µA, Fwd 9.39 V =2A, t P =8/2µA, Fwd 1.38 V =4A, t P =8/2µA, Fwd V Dynamic Resistance 1 R DYN TLP, t P =1ns, I/O to GND.4 Ω SD Withstand Voltage 1 V SD IC (Contact +3 / -23 kv IC (Air +3 / -23 kv Diode Capacitance 1 C I/O-GND Reverse Bias=V, f=3 GHz.3 pf Note: 1 Parameter is guaranteed by design and/or component characterization. 8/2μs Pulse Waveform Clamping Voltage vs. 11% 1% 9% 8% Percent of 7% 6% 5% 4% 3% Clamp Voltage (V C % 2. 1% % Time (μs Peak Pulse Current- (A Positive Transmission Line Pulsing (TLP Plot NegativeTransmission Line Pulsing (TLP Plot TLP Current (A TLP Voltage (V TLP Current (A TLP Voltage (V
3 Temperature TVS Diode Arrays (SPA Diodes IC kv Contact SD Clamping Voltage IC kv Contact SD Clamping Voltage ye diagram 5Gbps, 2.5 GHz w/sp88-8utg Insertion Loss Diagram -5. S21 Insertion Loss (db Frequency (Hz Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min 15 C - Temperature Max (T s(max 2 C Pb Free assembly - Time (min to max (t s 6 18 secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate Reflow - Temperature (T L (Liquidus 217 C 3 C/second max 3 C/second max - Temperature (t L 6 15 seconds Peak Temperature (T P 26 +/-5 C Time within 5 C of actual peak Temperature (t p Ramp-down Rate Time 25 C to peak Temperature (T P Do not exceed 26 C 2 4 seconds 6 C/second max 8 minutes Max. T P T L T S(max T S(min 25 t S Preheat Ramp-up time to peak temperature Product Characteristics Lead Plating Lead Material Substrate Material Body Material Flammability Pre-Plated Frame Copper Alloy Silicon Molded Compound t P t L Ramp-down Time Critical Zone TL to TP UL Recognized compound meeting flammabilit y rating V-.
4 Part Numbering System Part Marking System SP 88 8 U T G TVS Diode Arrays G= Green (SPA Diodes T= Tape & Reel Series Number of Channels Package U=μDFN-14 (5.5x1.5mm Ordering Information Part Number Package Min. Order Qty. SP88-8UTG µdfn-14 3 Package Dimensions D D µdfn-14(5.5x1.5x.5mm JDC MO-229 Pin1 Millimeters Inches Symbol Top View Min Nom Max Min Nom Max c Pin1 2 L Package Outline.62mm (3X Top View Side View eb NdB D2 b ea NdA Bottom View.56mm (3X 14 A1 A 1 h.43mm (6X 1.8mm c A A b c.1 Side.15 View D D NdB NdA 5. eb BSC.197 BSC ea.5 BSC.2 BSC eb 1.5 BSC.59 BSC 2 NdB 3. BSC.118 BSC L D b ea L.2.3 NdA h.5 Bottom.1 View Package Outline.56mm (3X.62mm (3X A1 A h.26mm (14X e=.5mm Recommended soldering pad layout.5mm (14X.43mm (6X 1.8mm.26mm (14X e=.5mm Recommended soldering pad layout.5mm (14X
5 Low Capacitance SD Protection - SP312 SP88 Series mbossed Carrier Tape & Reel Specification µdfn-14 P1 P2 P D User Feeding Direction Symbol Millimeters A /-.1 B /-.1 D /- W F Pin 1 Location D1 Ø 1. min /-.1 F 5.5 +/-.5 D1 A T K.7 +/-.1 P 2. +/-.5 P1 4. +/-.1 K B P2 4. +/-.1 T.3 +/-.5 W / Littelfuse, Inc. SP312 Series
SP1064 Series 8.5pF, 15 kv Diode Array
SP1064 Series 8.5pF, 15 kv Diode Array Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic
AQ3041 Series 0.5pF 20kV Unidirectional Discrete TVS
AQ304 Series 0.5pF 20kV Unidirectional Discrete TVS RoHS Pb GREEN Description The AQ304 includes low capacitance rail to rail diodes with an additional Zener diode to provide protection for electronic
SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS
SP3022 Series 0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for
SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS
Series 0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic
SP4042 Series 3.3V Diode Array RoHS Pb GREEN
SP4042 Series 3.3V Diode rray RoHS Pb GREEN Description The SP4042 integrates low capacitance steering diodes with a TVS diode to provide 2 channels of protection against lightning induced surge events
SP1008 Series 6pF 15kV Bidirectional Discrete TVS
TVS iode Arrays (SPA Family of Products 6pF 15kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology
SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS
0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic
Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection. SP725 Lead-Free/Green Series. RoHS Pb GREEN.
RoHS Pb GREEN Pinout Functional Block Diagram 5, 6 7, 8 SP725 (SOIC) IN 1 IN 2 IN 3, 4 1 2 3 4 8 7 6 5 Description Features Applications 67 Electronics Designers Guide 2008 Littelfuse Absolute Maximum
The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram
ESD5451R 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451R is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to
SIDACtor Protection Thyristors Broadband Optimized TM Protection. TwinChip Series - DO-214. Description
TwinChip Series - DO-214 RoHS Pb e3 Description TwinChip Series DO-214 are very low capacitance SIDACtor thyristors designed to protect broadband equipment such as VoIP, DSL modems and DSLAMs from damaging
Fixed Voltage Q2L Series 3.3x3.3 QFN
RoHS Pb e3 Fixed Voltage Q2L Series are uni-directional SIDACtor devices designed to protect SLICs (Subscriber Line Interface Circuit from damaging overvoltage transients. The series provides single line
AOZ8212ACI-05. Two-line Bi-directional TVS Diode. General Description. Features. Applications
Two-line Bi-directional TVS Diode General Description The is a two-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions
AOZ Ultra Low Capacitance One-line Bi-directional TVS Diode. Features. General Description. Applications. Signal Line
Ultra Low Capacitance One-line Bi-directional TVS Diode General Description The is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data
AOZ8231A. One-line Bi-directional TVS Diode. Features. General Description. Applications
One-line Bi-directional TVS Diode General Description The AOZ8231A is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient
AOZ8822. Ultra-Low Capacitance Two-line TVS Diode. General Description. Features. Applications
Ultra-ow Capacitance Two-line TVS Diode General Description The OZ8822 is an ultra-low capacitance two-line transient voltage suppressor diode designed to protect very high-speed data lines and voltage
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)
4-Line BUS-Port ESD-Protection
4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line
SPECIFICATION FOR APPROVAL INDEX
SPECIFICATION FOR APPROVAL INDEX COVER PAGE INDEX. 0 SCOPE...1 EXPLANATION OF PART NUMBER 1 CIRCUIT DIAGRAM & DIMENSION...1 SPECIFICATION..... 2-3 TAPING PACKAGE AND LABEL MARKING 4-5 PRECAUTIONS FOR HANDLING.....6-8
Specification of V-PORT XXXX-X-V05 Series
1 Scope Specification of V-PORT-0402 -XXXX-X-V05 Series This specification is applied to ESD and EMI protection for I/O port, for example, VGA, US etc. The customer designed part number drawing take precedence
SDP Biased Series - SOT23-6
SDP Biased Series - SOT23-6 RoHS Description Features & Benefits Agency Approvals Agency Agency File Number Pinout Designation & Schematic Symbol (30MHz Applicable Global Standards 1 6 2 5 P =8/20μs 3
TEA10402V15A0 Engineering Specification
TEA10402V15A0 Engineering 1. Scope This specification is applied to electrostatic discharge (ESD) protection. It is designed to protect the high-speed data lines against ESD transients. It has very low
SGM48753 CMOS Analog Switch
GENERAL DESCRIPTION The is a CMOS analog IC configured as three single-pole/double-throw (SPDT) switches. This CMOS device can operate from 2.5V to 5.5V single supplies. Each switch can handle rail-to-rail
Recommended Land Pattern: [mm]
![Recommended Land Pattern: [mm]](/thumbs/81/83470731.jpg "Recommended Land Pattern: [mm]")
Dimensions: [mm] Recommended Land Pattern: [mm] Absolute Maximum Ratings (Ambient Temperature 25 C): Properties Test conditions Value Unit (Reverse) Peak Pulse Current t p = 8/20µs I Peak 4 A 1 3,4 1,6
V N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
V V I H. T Part Number Marking
Phillip Havens Oct 2008 SIDCtor Protection Thyristors SDP Biased Series - 5x6 QN RoHS Pb e3 Description This new SDP Biased series provides overvoltage protection for applications such as VDSL2, DSL2,
Two-Line ESD Protection in SOT-23
Two-Line ESD Protection in 2 3 20456 MARKING (example only) YYY = type code (see table below) XX = date code 1 XX YYY XX 20512 20357 1 FEATURES Two-line ESD-protection device ESD-protection acc. IEC 61000-4-2
Exterior MAX MAX MAX MIN MAX BS0060N-C-F
Features Excellent capability of absorbing transient surge Quick response to surge voltage(ns Level) Eliminates overvoltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight:
Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 40 C 1.5 A I T(AV) Average on-state current T C
TCR22-x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height
Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with
FSUSB31 Low-Power 1-Port Hi-Speed USB 2.0 (480Mbps) Switch
Low-Power 1-Port Hi-Speed USB 2.0 (480Mbps) Switch Features Low On capacitance, 3.7pF (typical) Low On resistance, 6.5Ω (typical) Low power consumption (1µA maximum) 10µA maximum I CCT over and expanded
Surface Mount ESD Capability Rectifiers
Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50
High Power MicroClamp 1-Line ESD and Surge Protection
µclamp61p - µclamp661p High Power MicroClamp 1-Line ESD and Surge Protection PROTECTION PRODUCTS Description µclamp TVS diodes are designed to protect sensitive electronics from damage or latch-up due
FEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
Thyristors 6 Amp Sensitive & Standard SCRs. Sxx06xSx & Sxx06x Series
Sxx06xSx & Sxx06x Series RoHS Description This Sxx06x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
Low-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description.
Low clamping and ultra low capacitance single line bidirectional ESD protection Applications Datasheet - production data Where transient over voltage protection in ESD sensitive equipment is required,
Exterior. cathode V R V BR (V) min.(v)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 400Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior SMA Application
DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.
Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Pin 1 Pin 3 Pin 5 Pin 4 n.c.
TVS (transient voltage suppressor) Bi/uni-directional, 3.3 V, 2 pf, RoHS and halogen free compliant Feature list ESD/Transient/Surge protection according to: - IEC61-4-2 (ESD): ±3 kv (air/contact discharge)
Low-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package FEATURES Ultra compact CLP63 package 22543 22544 MARKING (example only) 1.3 XY 1 = Year code Open circle = Month code
Low Voltage 2-1 Mux, Level Translator ADG3232
Low Voltage 2-1 Mux, Level Translator ADG3232 FEATURES Operates from 1.65 V to 3.6 V Supply Rails Unidirectional Signal Path, Bidirectional Level Translation Tiny 8-Lead SOT-23 Package Short Circuit Protection
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 90 C 55 A I T(AV) Average on-state current T C
Sxx55x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
30 to 35 ma G. Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 80 C 20 A I T(AV)
Sxx20x & Sxx25x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design
VBUS5M2-HT1 2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD-Protection Diode - Flow Through Design 1 22814 3 MRKING (example only) Bar = cathode marking X = date code Y = type code (see
DATA SHEET THYRISTOR SURGE SUPPRESSORS MODEMS/LINE CARD PXXXXSX series
Product specification November 06, 201 V.0 DATA SHEET MODEMS/LINE CARD series RoHS compliant & Halogen free 2 Thyristor Surge Suppressors (TSS) Data Sheet Description DO-214AA Thyristor solid state protection
Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology
PHOTO SCR OPTOCOUPLERS
PACKAGE SCHEMATIC 6 6 ANODE 6 GATE CATHODE 2 5 ANODE N/C 3 4 CATHODE 6 DESCRIPTION The HC series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon
BS0300N-2C. Order Code: Exterior. Features. Agency Approvals. Schematic Symbol. Part SMB-T. Weight 88 mg Non degenerative RS485/232/422.
eatures xterior xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight
SMCJ5.0~440(C)A. MAXIMUM RATINGS AND CHARACTERISTICS Ra ngs at 25 C ambient temperature unless otherwise specified. THERMAL CONSIDERATIONS
Transient Suppressors DESCRIPTION The SMCJ series is designed specifically to protect sensi ve electronic equipment from voltage transients induced by lightning and other transient voltage events. FEATURES
Solid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case
Solid Tantalum SMD Capacitors TANTAMOUNT, Hi-Rel COTS, Low ESR, Metal Case PERFORMANCE CHARACTERISTICS Operating Temperature: -55 C to +125 C (above 85 C, voltage derating is required) Capacitance Range:
Teccor brand Thyristors 65 / 70 Amp Standard SCRs
Sxx65x & Sxx70x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
Improved Quad CMOS Analog Switches
Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary
PHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
HIGH SPEED TRANSISTOR OPTOCOUPLERS
DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection
Teccor brand Thyristors 1.5 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7
Ultra High Ratio Si Hyperabrupt Varactor Diode Rev. V10. RoHS Compliant Part Number Configuration Package Package Cp (pf) Package Ls (nh)
Features Ultra High Capacitance Ratio, C(0.1V)/C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages: SC-79, SOD- 323, SC-70, 3 Lead SPC Process for Superior C vs. V and Q vs. V Repeatability
single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R
Silicon PIN Diode Optimized for low current antenna switches in hand held applications Very low forward resistance (typ..5 Ω @ I F = ma) Low capacitance at zero volt reverse bias at frequencies above GHz
Teccor brand Thyristors Silicon Controlled Rectifiers
Description New device series offers high static dv/dt and lower turn off (t q ) sensitive SCR with its small die planar construction SCRs junctions are glass-passivated to ensure long term reliability
Teccor brand Thyristors 0.8 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current as furnished by
HIGH SPEED TRANSISTOR OPTOCOUPLERS
SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist
Exterior. cathode. V BR min.(v) V R (V)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 3000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB
LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET
LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit
Exterior. V BR min.(v) V R (V)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 5000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB
Zener Diodes FEATURES APPLICATIONS
Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification
BS0060N-2C. Order Code: B006N2C. Exterior. Features. Agency Approvals. Schematic Symbol. Part SMB-T. Weight:88mg Non degenerative. Video.
eatures xterior xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: level 1 Weight:88mg
AOZ1336DI. Single Channel Smart Load Switch. Features. General Description. Applications. Typical Application AOZ1336DI
Single Channel Smart Load Switch General Description The AOZ1336DI is a single channel load switch with typical 27mΩ on-resistance in a small package. It contains an n-channel MOSFET for up to 5.5V input
2 Input NAND Gate L74VHC1G00
Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
Gas Discharge Tube (GDT) Data Sheet
Gas Discharge Tube (GDT) Data Sheet Features Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-rising surge of 1KV/μs. Stable breakdown voltage. High insulation resistance.
FEATURES BENEFITS APPLICATIONS
0.37, Low Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known as a two-channel double-pole
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
IS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to
Teccor brand Thyristors 0.8 Amp Sensitive SCRs
Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by
SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
Photocoupler Product Data Sheet LTV-100X-G series datasheet Spec No.: DS Effective Date: 11/03/2016 LITE-ON DCC RELEASE
Product Data Sheet LTV-100X-G series datasheet Spec No.: DS70-2013-0012 Effective Date: 11/03/2016 Revision: G LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien
Super High AUTO (SHA) Series
PART NO. SFI1206SA240-1R5J 1.1 Technology Data Symbol Value Unit Maximum allowable continuous DC voltage V DC 12 V Breakdown voltage measured Vv 24(±10%) V Maximum clamping voltage V CLAMP < 40 V Maximum
Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package
TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide
LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6
5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage regulation with minimum space requirement.
PH5504A2NA1. Ambient Light Sensor DESCRIPTION FEATURES APPLICATIONS. R08DS0067EJ0100 Rev.1.00 Nov 05, 2012 DISCONTINUED
Ambient Light Sensor DESCRIPTION Data Sheet The is an ambient light sensor with a photo diode and current amplifier. This product has spectral characteristics close to human eye sensitivity and outputs
MOC8111 MOC8112 MOC8113
PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor
Aluminum Capacitors SMD (Chip) Long Life Vertical
Aluminum Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction requiring minimum
Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection
MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
Small Signal Zener Diodes
Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT 2.5; 5 ma V Z specification Pulse current Int. construction Single FEATURES Saving space