LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE. Pb Free Packages are Available.

BAS9LT, BAS0LT, BASLT, BASDWT Preferred Devices High Voltage Switching Diode Features PbFree Packages are Available MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol Value Unit BAS9 BAS0 BAS Repetitive

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

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LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol

2 Input NAND Gate L74VHC1G00

Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BT52C2V - BT52C39 SURFACE MOUNT ENER DIODE Features Planar Die Construction

Small Signal Zener Diodes, Dual

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AO3411 P-Channel Enhancement Mode Field Effect Transistor

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SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

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Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC-

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Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q qualified Compliant to RoHS Directive 22/95/EC and in accordance to WEEE

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Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

DZ-V-Series Small Signal Zener Diodes, Dual Features These diodes are available in other case styles and configurations including: the dual diode common anode configuration with type designation AZ, the

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Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Surface Mount SOT-2/SOT- 4 Package Low Turn-On Voltage (As Low as 4 V at ma) Low FIT (Failure in Time) Rate* Six-sigma

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WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

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TC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70

1 ma, Tiny CMOS LDO With Shutdown Features Space-saving -Pin SC-7 and SOT-23 Packages Extremely Low Operating Current for Longer Battery Life: 3 µa (typ.) Very Low Dropout Voltage Rated 1 ma Output Current

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DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.

The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram

ESD5451R 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451R is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to

3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR

3-TERMINAL A NEGATIE OLTAGE REGULATOR FEATURES Output Current Up to 1 No External Components Internal Thermal Overload Protection Internal Short-Circuit Limiting Output oltage of 5, 6, 8, 9, 12, 15, 18

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)

Package Lead Code Identification SINGLE 3 SERIES 3 UNCONNECTED PAIR RING QUAD

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V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

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350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom.. to V Test current I ZT. to 8 ma V Z specification Pulse current Int. construction Single FEATURES Silicon planar power Zener diodes

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Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low

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General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class

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MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)

Low VF SMD Schottky Barrier Diode

Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing

MAU100 Series. 1W, Miniature SIP, Single & Dual Output DC/DC Converters MINMAX. Block Diagram. Key Features

MAU Series W, Miniature SIP, Single & DC/DC s Key Features Efficiency up to 0 Isolation MTBF >,000,000 Hours Low Cost Input,, and Output 3.3,,9,,,{,{9,{ and { Temperature Performance -0 to UL 9V-0 Package

C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)

SSF7NS65UF 650V N-Channel MOSFET

Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

Small Signal Zener Diodes, Dual

DZ-V-G Series Small Signal Zener Diodes, Dual PRIMERY CHARACTERISTICS PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current FEATURES Dual silicon planar Zener diodes, common

MAU200 Series. 1W, High Isolation SIP, Single & Dual Output DC/DC Converters MINMAX. Block Diagram. Key Features

Component Distributors, Inc. ~ www.cdiweb.com ~ sales@cdiweb.com ~ -0--33 W, High Isolation SIP, Single & DC/DC s Key Features Efficiency up to 00 Isolation MTBF >,000,000 Hours Low Cost Input, and Output

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

DZ-V-Series Small Signal Zener Diodes, Dual Features These diodes are available in other case styles and configurations including: the dual diode common anode configuration e with type designation AZ,

Small Signal Zener Diodes

BZT-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T.; ma specification Pulse current Int. construction Single FEATURES Silicon planar Zener diodes

Schmitt-Trigger Inverter/ CMOS Logic Level Shifter

Schmitt-Trigger Inverter/ CMOS Logic Level Shifter with LSTTL Compatible Inputs The is a single gate CMOS Schmitt trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control

IRLML2030TRPbF HEXFET Power MOSFET

V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)

NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications

MA8000 Series. [ Fine classification, H rank ] Silicon planer type MA111. Zener Diodes. For stabilization of power supply.

MA MA00 Series Silicon planer e For stabilization of power supply Unit : mm Features Extremely low noise voltage from the diode (.4V to 39V, /3 to / of our conventional MA00 series) Satisfactory in rise

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/

NUD3160, SZNUD3160. Industrial Inductive Load Driver

Industrial Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling

C2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

PRIMARY CHARACTERISTICS I F(AV) A V RRM 00 V I FSM 00 A E AS 00 mj V F at I F = A 0.58 V T J max. 50 C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at

BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0.

BR42FILM BR43FILM SMLL SIGNL SCHOTTY DIODE Table 1: Main Product Characteristics I F(V) 0.1 V RRM 30 V T j 150 C V F (max) 0.33 and 0.40 V FETURES ND BENEFITS Very small conduction losses Negligible switching

Multichannel Optocoupler with Phototransistor Output

CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode

N-Channel ENHANCEMENT MODE POWER MOSFET 0V

PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION

QED222, QED223 Plastic Infrared Light Emitting Diode

QED222, QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide

Ultra High Ratio Si Hyperabrupt Varactor Diode Rev. V10. RoHS Compliant Part Number Configuration Package Package Cp (pf) Package Ls (nh)

Features Ultra High Capacitance Ratio, C(0.1V)/C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages: SC-79, SOD- 323, SC-70, 3 Lead SPC Process for Superior C vs. V and Q vs. V Repeatability

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

BAT54XV2 Schottky Barrier Diode

June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

Characteristic Symbol Value Unit Output Current I out 150 ma

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DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

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SP4042 Series 3.3V Diode Array RoHS Pb GREEN

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AME. High PSRR, Low Noise, 600mA CMOS Regulator AME8855. n General Description. n Typical Application. n Features. n Functional Block Diagram

8855 n General Description n Typical Application The 8855 family of positive, CMOS linear regulators provide low dropout voltage(42mv@6ma), low quiescent current, and low noise CMOS LDO. These rugged devices

PRODUCTION DATA SHEET

The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

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4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling

LM34 - Precision Fahrenheit Temperature Sensor

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4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.

LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage

Small Signal Zener Diodes

BZT-G-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT FEATURES Silicon planar power Zener diodes The Zener voltages are graded according to the international E standard AEC-Q

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

Optocoupler with Phototransistor Output K817P/ K827PH/ K847PH Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead

AME. High PSRR, Low Noise, 600mA CMOS Regulator AME8855. General Description. Typical Application. Features. Functional Block Diagram.

8855 General Description Typical Application The 8855 family of positive, CMOS linear regulators provide low dropout voltage(42mv@6ma), low quiescent current, and low noise CMOS LDO. These rugged devices

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard

AQ3041 Series 0.5pF 20kV Unidirectional Discrete TVS

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STPS1045B. Power Schottky rectifier. Description. Features

Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

Z-Rec Rectifier. C4D08120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications

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RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages

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