General Purpose Transistors
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1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount applications. Pb-Free Package is available. NPN PNP DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT AM SOT-33/SC- 3/Tape&Reel G AM (Pb-Free) SOT-33/SC- 3/Tape&Reel 3 A SOT-33/SC- 3/Tape&Reel G A (Pb-Free) SOT-33/SC- 3/Tape&Reel 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc 4 Collector Base Voltage V CBO 6 Vdc 4 Emitter Base Voltage V EBO 6. Vdc. Collector Current Continuous madc CASE 419, STYLE 3 SOT 33 / SC 1 BASE 3 COLLECTOR EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (1) P D 1 mw T A = C Thermal Resistance, Junction to Ambient R θja 833 C/W Junction and Storage Temperature, T stg to +1 C 1 BASE 3 COLLECTOR EMITTER LMBT394/6WT1-1/11
2 NPN PNP ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage () ( = 1. madc, I B = ) V (BR)CEO 4 Vdc ( = 1. madc, I B = ) 4 Collector Base Breakdown Voltage ( = µadc, I E = ) V (BR)CBO 6 Vdc ( = µadc, I E = ) 4 Emitter Base Breakdown Voltage (I E= µadc, = ) V (BR)EBO 6. Vdc (I E = µadc, = ). Base Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) I BL nadc (V CE = 3 Vdc, V EB = 3. Vdc) - Collector Cutoff Current (V CE = 3 Vdc, V EB = 3. Vdc) EX nadc (V CE = 3 Vdc, V EB = 3. Vdc) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.. Pulse Test: Pulse Width <3 µs; Duty Cycle <.%. LMBT394/6WT1-/11
3 NPN PNP ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS () DC Current Gain h FE ( =.1 madc, V CE = 1. Vdc) 4 ( = 1. madc, V CE = 1. Vdc) ( = madc, V CE = 1. Vdc) 3 ( = madc, V CE = 1. Vdc) 6 ( = madc, V CE = 1. Vdc) 3 ( =.1 madc, V CE = 1. Vdc) 6 ( = 1. madc, V CE = 1. Vdc) 8 ( = madc, V CE = 1. Vdc) 3 ( = madc, V CE = 1. Vdc) 6 ( = madc, V CE = 1. Vdc) 3 Collector Emitter Saturation Voltage V CE(sat) Vdc ( = madc, I B = 1. madc). ( = madc, I B =. madc).3 ( = madc, I B = 1. madc). ( = madc, I B =. madc).4 Base Emitter Saturation Voltage V BE(sat) Vdc ( = madc, I B = 1. madc).6.8 ( = madc, I B =. madc).9 ( = madc, I B = 1. madc).6.8 ( = madc, I B =. madc).9 SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f T MHz ( = madc, V CE = Vdc, f = MHz) 3 ( = madc, V CE= Vdc, f = MHz) Output Capacitance C obo pf (V CB =. Vdc, I E =, f = 1. MHz) 4. (V CB=. Vdc, I E =, f = 1. MHz) 4. Input Capacitance C ibo pf (V EB =. Vdc, =, f = 1. MHz) 8. (V EB =. Vdc, =, f = 1. MHz). Input Impedance h ie kω (V CE= Vdc, = 1. madc, f = 1. khz) 1. (V CE= Vdc, = 1. madc, f = 1. khz). 1 Voltage Feedback Ratio h re X 4 (V CE= Vdc, = 1. madc, f = 1. khz). 8. (V CE= Vdc, = 1. madc, f = 1. khz).1 Small Signal Current Gain h fe (V CE= Vdc, = 1. madc, f = 1. khz) 4 (V CE= Vdc, = 1. madc, f = 1. khz) 4 Output Admittance h oe µmhos (V CE= Vdc, = 1. madc, f = 1. khz) 1. 4 (V CE= Vdc, = 1. madc, f = 1. khz) 3. 6 Noise Figure NF db (V CE=.Vdc, = µadc, R S=1. kω, f =1.kHz). (V CE=.Vdc, = µadc, R S=1. kω, f =1.kHz) 4. LMBT394/6WT1-3/11
4 NPN PNP SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc, V BE =. Vdc) t d 3 (V CC = 3. Vdc, V BE =. Vdc) 3 ns Rise Time ( = madc, I B1 = 1. madc) t r 3 ( = madc, I B1 = 1. madc) 3 ns Storage Time (V CC = 3. Vdc, = madc) t s (V CC = 3. Vdc, = madc) ns Fall Time (I B1 = I B = 1. madc) t f (I B1 = I B = 1. madc) ns. Pulse Test: Pulse Width <3 µs; Duty Cycle <.%. 3 ns DUTY CYCLE = %. V +.9 V <1 ns k +3 V < t 1 < µs DUTY CYCLE = % C S < 4. pf* 9.1 V t V k 1N V C S < 4. pf* <1. ns *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS = C = 1 C. 3 V CC = 4 V / I B = CAPACITANCE (pf). 3.. C ibo C obo Q, CHARGE (pc) 3 Q T Q A REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Charge Data LMBT394/6WT1-4/11
5 NPN PNP 3 = 3 V CC = 4 V = TIME (ns) 3 t CC =3.V 4 V t r, RISE TIME (ns) 3 1 V t OB =V. V Figure. Turn On Time Figure 6. Rise Time t s, STORAGE TIME (ns) 3 3 = = t s = t s 1/8t f I B1 =I B = = Figure. Storage Time t f, FALL TIME (ns) 3 3 = = Figure 8. Fall Time V CC =4V I B1 = I B TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = C, Bandwidth = 1. Hz) 1 SOURCE RESISTANCE= Ω = 1. ma 14 1 f = 1. khz = 1. ma NF, NOISE FIGURE (db) 8 SOURCE RESISTANCE= Ω =. ma 6 SOURCE RESISTANCE =1.kΩ = µa 4 SOURCE RESISTANCE= Ω = µa NF, NOISE FIGURE (db) =. ma = µa 8 = µa f, FREQUENCY (khz) Figure 9. Noise Figure R S, SOURCE RESISTANCE (kω) Figure. Noise Figure LMBT394/6WT1-/11
6 NPN PNP h PARAMETERS (V CE = Vdc, f = 1. khz, T A = C) h fe, CURRENT GAIN Figure 11. Current Gain h oe, OUTPUT ADMITTANCE ( µmhos) Figure 1. Output Admittance h ie, INPUT IMPEDANCE (k OHMS) h re, VOLTAGE FEEDBACK RATIO (X 4 ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio LMBT394/6WT1-6/11
7 NPN PNP TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) = +1 C V CE = 1. V + C. C Figure 1. DC Current Gain 1. = C.8 = 1. ma ma 3 ma ma I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region = C V = C TO +1 C V, VOLTAGE ( VOLTS ) V = V V CE =1. V COEFFICIENT (mv/ C) θ VC for V CE θ VB for V BE C TO + C C TO + C + C TO +1 C 1... C Figure 1. ON Voltages Figure 18. Temperature Coefficients LMBT394/6WT1-/11
8 NPN PNP 3 V +9.1 V < 1 ns 3 V +.6 V < 1 ns k 3 ns DUTY CYCLE = % C S < 4 pf* < t 1 < µs DUTY CYCLE = % t 1.9 V k 1N916 C S < 4 pf* * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit CAPACITANCE (pf) C obo C ibo REVERSE BIAS VOLTAGE (VOLTS) Figure 1. Capacitance TYPICAL TRANSIENT CHARACTERISTICS Q, CHARGE (pc) 3 3 V CC = 4 V = Figure. Charge Data Q T Q A = C = 1 C TIME (ns) 3 t V CC = 3. V = 1 V 3 4 V. V t V OB = V Figure 3. Turn On Time t f, FALL TIME (ns) 3 3 = = V CC = 4 V I B1 = I B Figure 4. Fall Time LMBT394/6WT1-8/11
9 NPN PNP TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = C, Bandwidth = 1. Hz) NF, NOISE FIGURE (db) SOURCE RESISTANCE= Ω = 1. ma SOURCE RESISTANCE= Ω =. ma SOURCE RESISTANCE =.kω = µa. 6 4 = µa SOURCE RESISTANCE=.kΩ 1. = µa = µa f, FREQUENCY (khz) Figure R S, SOURCE RESISTANCE (kω) Figure 6 h PARAMETERS NF, NOISE FIGURE (db) f = 1. khz (V CE = Vdc, f = 1. khz, T A = C) = 1. ma =. ma h fe, CURRENT GAIN Figure. Current Gain h oe, OUTPUT ADMITTANCE ( µmhos) Figure 8. Output Admittance h ie, INPUT IMPEDANCE (kω) h re, VOLTAGE FEEDBACK RATIO (X 4 ) Figure 9. Input Impedance Figure 3. Voltage Feedback Ratio LMBT394/6WT1-9/11
10 NPN PNP STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) = +1 C V CE = 1. V + C. C Figure 31. DC Current Gain 1. = C.8 =1. ma ma 3 ma ma I B, BASE CURRENT (ma) Figure 3. Collector Saturation Region V, VOLTAGE ( VOLTS ) 1. = C V = 1. V V CE =1. V V = 1... C Figure 33. ON Voltages θ V, TEMPERATURE COEFFICIENT (mv/ C) 1.. θ VC for V CE(sat) + C TO +1 C C TO + C. + C TO +1 C 1. θ VB for V BE(sat) C TO + C Figure 34. Temperature Coefficients LMBT394/6WT1-/11
11 NPN PNP SC- / SOT-33 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.M, CONTROLLING DIMENSION: INCH. S A L 3 1 G B C D N J DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H..4.. J.4... K.1 REF.4 REF L.6 BSC.6 BSC N.8 REF. REF S (.) H K inches mm LMBT394/6WT1-11/11
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Transistors 6--E ITT INTERMETALL All information and data contained in this data book are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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Designed Specifically for High Frequency Electronic Ballasts up to 5 W h FE 6 to at = V, = A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3~4 Switching time equivalent test circuits... Rating and characteristic curves...
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