COMPLEMENTARY NPN/PNP TRANSISTOR

Transcription

1 SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: 46 MAXIMUM RATINGS (T A =25 unless otherwise noted) H SOT 363/SC 88 CASE 419B STYLE 1 Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.2 W T J Junction Temperature 150 T stg Storage Temperature (3) (2) (1) Q 1 Q 2 (4) (5) (6) NPN 3904 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 10μA, I E=0 60 V Collector-emitter breakdown voltage V (BR)CEO I C= 1mA, I B=0 40 V Emitter-base breakdown voltage V (BR)EBO I E= 10μA, I C=0 5 V Collector cut-off current I CBO V CB= 30 V, I E= μa Collector cut-off current I CEO V CE= 30 V, I B=0 0.5 μa Emitter cut-off current I EBO V EB= 5V, I C= μa DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage h FE(1) V CE= 1V, I C= 0.1mA 40 h FE(2) V CE= 1V, I C= 1mA 70 h FE(3) V CE= 1V, I C= 10mA h FE(4) V CE= 1V, I C= 50mA 60 h FE(5) V CE= 1V, I C= 100mA 30 V CE(sat)1 I C=10 ma, I B= 1mA 0.2 V V CE(sat)2 I C=50 ma, I B= 5mA 0.3 V V BE(sat)1 I C= 10 ma, I B= 1mA V V BE(sat)2 I C= 50 ma, I B= 5mA 0.95 V Transition frequency f T V CE=20V,I C=20mA, f=100mhz 300 MHz Noise figure NF V CE=5V,I c=0.1ma, f=1khz,rg=1kω 5 db Output Capacitance C ob V CB=5V,I E=0,f=1MHz 4 pf Delay time t d V CC=3V, V BE=0.5V 35 ns Rise time I C=10mA, I B1=- I B2=1mA 35 ns t r Storage time t S V CC=3V, I C=10mA 200 ns Fall time I B1=-I B2= 1mA 50 ns t f 1 REV

2 DEVICE CHARACTERISTICS MAXIMUM RATINGS(T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.2 A P C Collector Power Dissipation 0.2 W T J Junction Temperature 150 T stg Storage Temperature PNP 3906 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C=-10μA,I E=0-40 V Collector-emitter breakdown voltage V (BR)CEO I C=-1mA,I B=0-40 V Emitter-base breakdown voltage V (BR)EBO I E=-10μA,I C=0-5 V Collector cut-off current I CBO V CB=-30V,I E= μa Emitter cut-off current I EBO V EB=-5V,I C= μa DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage h FE(1) V CE=-1V,I C=-0.1mA 60 h FE(2) V CE=-1V,I C=-1mA 80 h FE(3) V CE=-1V,I C=-10mA h FE(4) V CE=-1V,I C=-50mA 60 h FE(5) V CE=-1V,I C=-100mA 30 V CE(sat)1 I C=-10mA,I B=-1mA V V CE(sat)2 I C=-50mA,I B=-5mA -0.4 V V BE(sat)1 I C=-10mA,I B=-1mA V V BE(sat)2 I C=-50mA,I B=-5mA V Transition frequency f T V CE=-20V,I C=-10mA,f=100MHz 250 MHz Collector output capacitance C ob V CB=-5V,I E=0,f=1MHz 4.5 pf Noise figure NF V CE=-5V,I c=-0.1ma, f=1khz,rg=1kω 4 db Delay time t d V CC=-3V, V BE=-0.5V 35 ns Rise time I C=-10mA, I B1=-I B2=-1mA 35 ns t r Storage time t S V CC=-3V, I C=-10mA 225 ns Fall time I B1=-I B2=- 1mA 75 ns t f 2 REV

3 DEVICE CHARACTERISTICS 3 REV

4 PACKAGE OUTLINE & DIMENSIONS 4 REV

5 PACKAGE OUTLINE & DIMENSIONS SC-88/SOT-363 A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH DIM INCHES MILLIMETERS MIN MAX MIN MAX A S B- B C D G BSC 0.65 BSC D6 P L 0.2 (0.008) M N B M H J K N REF 0.20 REF J S C H K PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4.EMITTER 2 5. BASE 2 6.COLLECTOR mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm 5 REV