PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES
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1 PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction temperature range T J,Tstg: 55 O C to+15 O C MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94VO rate flame retardant * Lead: MILSTD2E method 8C guaranteed * Mounting position: Any * Weight:.8 gram min..49 (12.5).18 (4.6).18 (4.6).14 (3.6) max..22 (.55) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by %..98 (2.5) Bottom Dimensions in inches and (millimeters) (TO92) MAXIMUM RATINGES T A = 25 O C unless otherwise noted) RATINGS SYMBOL VALUE UNITS Max. Steady State Power Dissipation o C Derate above 25 O C PD 625 mw Max. Operating Temperature Range TJ 15 o C Storage Temperature Range TSTG 55 to +15 o C ELECTRICAL CHARACTERISTICS T A = 25 O C unless otherwise noted) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS Thermal Resistance Junction to Ambient R θja o C/W Notes : 1. Alumina=.4*.3*.24in.99.5% alumina 2. "Fully ROHS Compliant", "% Sn plating (Pbfree)". 112
2 ELECTRICAL CHARACTERISTICS O C unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C = u Adc, I E = ) EmitterBase Breakdown Voltage (I E = u Adc, I C = ) V (BR)CEO 4 Vdc V (BR)CBO 75 Vdc V (BR)EBO 6. Vdc Collector Cutoff Current (V CE = 6Vdc,V EB(off) = 3.Vdc I CEX.1 Collector Cutoff Current (V CB = 6Vdc, I E = ) (V CB = 6Vdc, I E =, TA= 15 O C) I CBO.1 Emitter Cutoff Current (V EB = 3.Vdc, I C = ) I EBO.1 Base Cutoff Current (V CE = 6Vdc, V EB(off) = 3.Vdc I BL nadc ON CHARACTERISTICS DC Current Gain (I C = madc, V CE = Vdc, TA= 55 O C) (I C = 5mAdc, V CE = Vdc) (1) hfe 35 4 CollectorEmitter Saturation Voltage (1) (I C = 15mAdc, I B = 15mAdc) (I C = 5mAdc, I B = 5mAdc) BaseEmitter Saturation Voltage (1) (I C = 15mAdc, I B = 15mAdc) (I C = 5mAdc, I B = 5mAdc) SMALLSIGNAL CHARACTERISTICS V.3 CE(sat) 1. V BE(sat) Vdc Vdc CurrentGainBandwidth Product (2) (I C = madc, V CE = Vdc, f= MHz) Input Capacitance (V EB =.5Vdc, I C =, f= 1.MHz) f T 3 MHz C ibo 25 pf Input Impedance (IC= 1.mAdc, V CE =Vdc, f=1.khz) (I C = madc, V CE =Vdc, f=1.khz) Voltage Feedback Ratio (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE =Vdc, f= 1.kHz) SmallSignal Current Gain (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE = Vdc, f= 1.kHz) Output Admittance (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE = Vdc, f= 1.kHz) ie h re h fe h oe kohms X 4 umhos Collector Base Time Constant (I E = madc, V CB = Vdc, f= 31.8MHz) rb,cc 15 ps Noise Figure (I C = u Adc, V CE = Vdc, R S = 1.kohms, f= 1.kHz) NF 4. db SWITCHING CHARACTERISTICS Delay Time Rise Time (V CC = 3Vdc, V BE(off) =.5Vdc, I C = 15mAdc, I B1 = 15mAdc) t d t r 25 ns Storage Time Fall Time (V CC = 3Vdc, I C = 15mAdc, I B1 = I B2 = 15mAdc) t s t f ns NOTES : 1. Pulse Test: Pulse Width<3ms,Duty Cycle<2.% 2. f T is defined as the frequency at which hfe extrapolates to unity
3 RATING AND CHARACTERISTICS CURVES ( PN2222A ) hfe, DCCURRENT GAIN VCE, COLLECTOREMITTER VOLTAGE (V) k I C,CCLLECTOR CURRENT (ma) Figure 1. DC Current Gain I B,BASE CURRENT (ma) Figure 2. Collector Saturation Region t,time (ns) I C,CLLECTOR CURRENT (ma) Figure 3.TurnOn Time I C /I B = t CC =3V t EB (off)=2.v t EB (off)= t,time (ns) t' s =t s 1/8t f t f I C,CLLECTOR CURRENT (ma) Figure 4.TurnOff Time V CC =3V I C /I B = I B1=I B2
4 RATING AND CHARACTERISTICS CURVES ( PN2222A ) NT, NOISE FIGURE (db) I C =1.mA,RS=15Ω 5uA,RS=Ω ua,rs=2.kω 5uA,RS=4.KΩ R S =OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (db) f=1.khz I C =5uA ua 5uA 1.mA CAPACITANCE (PF) REVERSE VOLTAGE (VOLTS) Figure 7.Capacitances T, CURRENTGAINBANDWIDTHPRODUCT (MHz) k 2.k 5.k k k 5k k f, FREQUENCY (KHz) R S,SOURCE RESISTANCE (OHMS) Figure 5.Frequency Effects Ceb C Cb Figure 6.Source Resistance Effects VCE=V TJ=25 O C Figure 8.CurruntGain Bandwidth Product V, VOLTAGE (V).8 VBE(sat)@IC/IB= 1.V.6 VBE(on)@VCE=V.4.2 VCE(sat)@IC/IB= k COEFFICIENT (mv/ O C) RθVC for VCE(sat) RθVB for VBE Figure 9."On" Voltages Figure.Temperature Coefficients
5 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, lifesaving implant or other applications intended for lifesustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
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NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short
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