PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

Transcription

1 DEVICES PNP SILICON SITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T C = +25 C unless otherwise noted) Parameters / Test Conditions Symbol 2N3634* 2N3635* 2N3636* 2N3637* Collector-Emitter Voltage V CEO Collector-Base Voltage V CBO Unit Emitter-Base Voltage V EBO Collector Current I C Adc Total Power Dissipation T A = +25 T C = +25 T C = +25 C P T ** Operating & Storage Junction Temperature Range T J, T stg -65 to +200 C * Electrical characteristics for L suffix devices are identical to the non L corresponding devices. ** Consult 19500/357 for De-Rating curves TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted) OFF CHARACTERTICS Collector-Emitter Breakdown Voltage I C = madc Collector-Base Cutoff Current V CB = V CB = 140 V CB = 175 Emitter-Base Cutoff Current V EB = 3.0 V EB = 5.0 Collector-Emitter cutoff Current V CE = V (BR)CEO I CBO I EBO 50 ηadc ηadc I CEO TO-39* (TO-205AD) 3 PIN 2N3634UB, 2N3635UB 2N3636UB, 2N3637UB T4-LDS-0156 Rev. 2 (1452) Page 1 of 5

2 ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted) ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = 0.1mAdc, V CE = I C = 1.0mAdc, V CE = I C = madc, V CE = I C = 50mAdc, V CE = I C = 150mAdc, V CE = I C = 0.1mAdc, V CE = I C = 1.0mAdc, V CE = I C = madc, V CE = I C = 50mAdc, V CE = I C = 150mAdc, V CE = Collector-Emitter Saturation Voltage I C = madc, I B = 1.0mAdc I C = 50mAdc, I B = 5.0mAdc 2N3634, 2N h FE V CE(sat) Base-Emitter Saturation Voltage I C = madc, I B = 1.0mAdc V BE(sat) I C = 50mAdc, I B = 5.0mAdc 0.65 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio I C = 30mAdc, V CE = 30, f = MHz 2N3634, 2N3636 h fe Forward Current Transfer Ratio I C = madc, V CE =, f = 1.0kHz Small-Signal Short-Circuit Input Impedance I C = madc, V CE =, f = 1.0kHz Small-Signal Open-Circuit Input Impedance I C = madc, V CE =, f = 1.0kHz 2N3634, 2N3636 2N3634, 2N3636 h fe h ie h oe 200 μs Ω Output Capacitance V CB = 20, I E = 0, khz f 1.0MHz Input Capacitance V EB = 1.0, I C = 0, khz f 1.0MHz C obo pf C ibo 75 pf Noise Figure V CE =, I C = 0.5mAdc, R g = 1.0kΩ (1) Pulse Test: Pulse idth = 300μs, Duty Cycle 2.0% f = Hz f = 1.0kHz f = khz NF db T4-LDS-0156 Rev. 2 (1452) Page 2 of 5

3 SAFE OPERATING AREA DC Tests T C = 25 C, 1 Cycle, t = 1.0s Test 1 V CE =, I C = 30mAdc V CE = 130, I C = 20mAdc Test 2 V CE = 50, I C = 95mAdc Test 3 V CE = 5.0, I C = 1.0Adc T4-LDS-0156 Rev. 2 (1452) Page 3 of 5

4 PACKAGE DIMENSIONS Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD CH HD LC.200 TYP 5.08 TYP 7 LD LL See notes 7, 9, and LU L L P Q r TL T α 45 TP 45 TP 6 Term 1 Emitter Term 2 Base Term 3 Collector NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r maximum, T must be held to a minimum length of.021 inch (0.53 mm). 4. TL measured from maximum HD. 5. CD shall not vary more than ±.0 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane inch ( mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by gauge and gauging procedure. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. r (radius) applies to both inside corners of tab. 9. For transistor types 2N3634 through 2N3637, LL is.500 inch (12.70 mm) minimum, and.750 inch (19.05 mm) maximum (TO-39).. For transistor types 2N3634L through 2N3637L, LL is inches (38. mm) minimum, and inches (44.45 mm) maximum (TO-5). 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1: Physical dimensions (TO-5 and TO-39) T4-LDS-0156 Rev. 2 (1452) Page 4 of 5

5 NOTES: Dimensions 1. Dimensions are in inches. Ltr Inches Millimeters Notes 2. Millimeters are given for general information only. Min Max Min Max 3. Hatched areas on package denote metallized areas. BH Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = BL Shielding connected to the lid. B In accordance with ASME Y14.5M, diameters are. CL equivalent to φx symbology C LL LL LS LS L r r r FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version). T4-LDS-0156 Rev. 2 (1452) Page 5 of 5