B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

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4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead

1 4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free by Design/RoHS Compliant (Note ) Green Device (Note 2) Mechanical Data Case: DFN30H4-6 Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94-0 Moisture Sensitivity: Level per J-STD-020C Terminals: Finish NiPdu over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 C Ordering Information: See Page 4 2 B E B G H Z R0.5 0 D D Top iew Side iew E K N L M Z N L C DFN30H4-6 Dim Min Max Typ B C D* E** G H K* L* M** E 2 B 2 C Internal Schematic (TOP IEW) Bottom iew E, B, C = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section N* Z** ll Dimensions in mm * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X Maximum Ratings, NPN 3904 = 25 C unless otherwise specified Characteristic Symbol alue Unit Collector-Base oltage CBO Collector-Emitter oltage CEO 40 Emitter-Base oltage EBO 6.0 Collector Current Continuous I C 200 m Power Dissipation (Notes 3, 4) P d 200 mw Thermal Resistance, Junction to mbient (Note 3) R θj 625 C/W Maximum Ratings, PNP 3906 = 25 C unless otherwise specified Characteristic Symbol alue Unit Collector-Base oltage CBO -40 Collector-Emitter oltage CEO -40 Emitter-Base oltage EBO -5.0 Collector Current - Continuous (Note ) I C -200 m Power Dissipation (Notes 3, 4) P d 200 mw Thermal Resistance, Junction to mbient (Note 3) R θj 625 C/W Notes:. No purposefully added lead. 2. Diodes Inc. s Green policy can be found on our website at 3. Device mounted on FR-4 PCB. 4. Maximum combined dissipation. DS30822 Rev. 4-2 of 5

2 Electrical Characteristics, NPN 3904 = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHRCTERISTS (Note 5) Collector-Base Breakdown oltage (BR)CBO I C = 0μ, I E = 0 Collector-Emitter Breakdown oltage (BR)CEO 40 I C =.0m, I B = 0 Emitter-Base Breakdown oltage (BR)EBO 6.0 I E = 0μ, I C = 0 Collector Cutoff Current I CEX 50 n CE = 30, EB(OFF) = 3.0 Base Cutoff Current I BL 50 n CE = 30, EB(OFF) = 3.0 ON CHRCTERISTS (Note 5) DC Current Gain h FE Collector-Emitter Saturation oltage CE(ST) I C = 00µ, CE =.0 I C =.0m, CE =.0 I C = 0m, CE =.0 I C = 50m, CE =.0 I C = 00m, CE =.0 I C = 0m, I B =.0m I C = 50m, I B = 5.0m I C = 0m, I B =.0m I C = 50m, I B = 5.0m 0.65 Base-Emitter Saturation oltage BE(ST) SMLL SIGNL CHRCTERISTS Output Capacitance C obo 4.0 pf CB = 5.0, f =.0MHz, I E = 0 Current Gain-Bandwidth Product f T 300 MHz SWITCHING CHRCTERISTS Delay Time t d 35 ns Rise Time t r 35 ns Storage Time t s 200 ns Fall Time t f 50 ns CE = 20, I C = 20m, f = 00MHz CC = 3.0, I C = 0m, BE(off) = -0.5, I B =.0m CC = 3.0, I C = 0m, I B = I B2 =.0m Electrical Characteristics, PNP 3906 = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHRCTERISTS (Note 5) Collector-Base Breakdown oltage (BR)CBO -40 I C = -0μ, I E = 0 Collector-Emitter Breakdown oltage (BR)CEO -40 I C = -.0m, I B = 0 Emitter-Base Breakdown oltage (BR)EBO -5.0 I E = -0μ, I C = 0 Collector Cutoff Current I CEX -50 n CE = -30, EB(OFF) = -3.0 Base Cutoff Current I BL -50 n CE = -30, EB(OFF) = -3.0 ON CHRCTERISTS (Note 5) DC Current Gain h FE Collector-Emitter Saturation oltage CE(ST) I C = -00µ, CE = -.0 I C = -.0m, CE = -.0 I C = -0m, CE = -.0 I C = -50m, CE = -.0 I C = -00m, CE = -.0 I C = -0m, I B = -.0m I C = -50m, I B = -5.0m I C = -0m, I B = -.0m I C = -50m, I B = -5.0m Base-Emitter Saturation oltage BE(ST) SMLL SIGNL CHRCTERISTS Output Capacitance C obo 4.5 pf CB = -5.0, f =.0MHz, I E = 0 Current Gain-Bandwidth Product f T 250 MHz SWITCHING CHRCTERISTS Delay Time t d 35 ns Rise Time t r 35 ns Storage Time t s 225 ns Fall Time t f 75 ns Notes: 5. Short duration test pulse used to minimize self-heating effect. CE = -20, I C = -0m, f = 00MHz CC = -3.0, I C = -0m, BE(off) = 0.5, I B = -.0m CC = -3.0, I C = -0m, I B = I B2 = -.0m DS30822 Rev of 5

3 250 P D, POWER DISSIPTION (mw) T, MBIENT TEMPERTURE ( C) Fig., Max Power Dissipation vs mbient Temperature (Total Device) (Note 3) f = MHz Fig. 2, Typical Output Capacitance Characteristics (NPN-3904),000 h FE, DC CURRENT GIN 00 0 T = -25 C T = 25 C T = +25 C CE(ST), COLLECTOR-EMITTER () STURTION OLTGE 0. I = 0 B BE(ST), BSE-EMITTER STURTION OLTGE () CE = ,000 I C, COLLECTOR CURRENT (m) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904) 0 I = 0 B ,000 I C, COLLECTOR CURRENT (m) Fig. 5, Typical Base-Emitter Saturation oltage vs. Collector Current (NPN-3904) ,000 I C, COLLECTOR CURRENT (m) Fig. 4, Typical Collector-Emitter Saturation oltage vs. Collector Current (NPN-3904) f = MHz Fig. 6, Typical Output Capacitance Characteristics (PNP-3906) DS30822 Rev of 5

4 ,000 0 h FE, DC CURRENT GIN 00 0 T = -25 C T = 25 C T = +25 C =.0 CE ,000 I C, COLLECTOR CURRENT (m) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906) CE(ST), COLLECTOR-EMITTER STURTION OLTGE () 0. I = 0 B ,000 I C, COLLECTOR CURRENT (m) Fig. 8, Typical Collector-Emitter Saturation oltage vs. Collector Current (PNP-3906) BE(ST), BSE-EMITTER STURTION OLTGE () I = 0 B I C, COLLECTOR CURRENT (m) Fig. 9, Typical Base-Emitter Saturation oltage vs. Collector Current (PNP-3906) Ordering Information (Note 6) Device Packaging Shipping 4-7 DFN30H /Tape & Reel Notes: 6. For packaging details, go to our website at Marking Information 46 46= Product Type Marking Code DS30822 Rev of 5

5 IMPORTNT NOTE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30822 Rev of 5

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface