B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )

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1 Designed Specifically for High Frequency Electronic Ballasts up to 5 W h FE 6 to at = V, = A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-0 PACKAGE (TOP VIEW) 3 Pin is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 5 C ambient temperature (unless otherwise noted ) RATING SYMBOL VALUE UNIT voltage (V BE = 0) S 700 V Collector-base voltage (I E = 0) V CBO 700 V voltage (I B = 0) O 400 V Emitter-base voltage V EBO 9 V Continuous collector current 4 A Peak collector current (see Note ) M 8 A Peak collector current (see Note ) M 4 A Continuous base current I B.5 A Peak base current (see Note ) I BM 3.5 A Continuous device dissipation at (or below) 5 C case temperature P tot 75 W Operating junction temperature range T j -65 to +50 C Storage temperature range T stg -65 to +50 C NOTES:. This value applies for = 0 ms, duty cycle %.. This value applies for = 300 µs, duty cycle %. JULY 99 - REVISED SEPTEMBER 00

2 electrical characteristics at 5 C case temperature (unless otherwise noted) O(sus) ES I EBO V BE(sat) (sat) h FE V FCB sustaining voltage cut-off current Emitter cut-off current Base-emitter saturation voltage saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage = 00 ma L = 5 mh (see Note 3) 400 V =700 V =700 V V BE =0 V BE =0 = 90 C V EB = 9 V =0 ma = V = V = 5 V = A = A = A = A = 0 ma = A = 8 A (see Notes 4 and 5) = 90 C (see Notes 4 and 5) = 90 C NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, = 300 µs, duty cycle %. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3. mm from the device body. thermal characteristics B = 60 ma 850 mv PARAMETER MIN TYP MAX UNIT R θja Junction to free air thermal resistance 6.5 C/W R θjc Junction to case thermal resistance.66 C/W inductive-load switching characteristics at 5 C case temperature Storage time. 3 µs = A = 400 ma V CC = 40 V Current fall time ns L = mh = 800 ma V CLAMP t xo Cross over time ns Storage time = A = 400 ma V CC = 40 V 4 6 µs Current fall time L = mh = 50 ma V CLAMP 0 30 ns µa V V resistive-load switching characteristics at 5 C case temperature Storage time = A =400 ma. 3 µs Current fall time V CC =400 ma ns JULY 99 - REVISED SEPTEMBER 00

3 TYPICAL CHARACTERISTICS h FE - Forward Current Transfer Ratio FORWARD CURRENT TRANSFER RATIO L79CHF 30 = 5 C 0 = V = 5 V COLLECTOR-EMITTER SATURATION VOLTAGE Figure. Figure. = = /.5 V CC = 40 V V CLAMP L = mh = 5 C L79CI t xo (sat) - Collector-Emitter Saturation Voltage - V I B = = 5 C = 90 C = 40 V, L = mh = 800 ma, V CLAMP, = A L79CVB L79CI Figure 3. Figure 4. JULY 99 - REVISED SEPTEMBER 00 3

4 TYPICAL CHARACTERISTICS 0 0 = = / 8 V CC = 40 V V CLAMP L = mh = 5 C L79CI Figure 5. Figure 6. RESISTIVE SWITCHING TIMES =, V CC =, = 5 C L79CR 0 0 = 40 V, L = mh = 50 ma, V CLAMP, = A RESISTIVE SWITCHING TIMES 0 = 400 ma, = A L79CI4 L79CR Resistive Switching Time - µs 0 Resistive Switching Time - µs Figure 7. Figure 8. 4 JULY 99 - REVISED SEPTEMBER 00

5 MAXIMUM SAFE OPERATING REGIONS 0 0 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA L79CFB 0 = 5 C = 0 µs = 00 µs = ms = 0 ms DC Operation Collector-Emitter Voltage - V MAXIMUM REVERSE-BIAS SAFE OPERATING AREA Collector-Emitter Voltage - V Figure 9. Figure L79CRB = V BE(off) = -5 V = 5 C JULY 99 - REVISED SEPTEMBER 00 5

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

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