Characteristic Symbol Value Unit Output Current I out 150 ma

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1 LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor with stable V ce_sat which does not depend on the input voltage and can support maximum continuous current of ma up to 2 (see fig. ). It also contains a discrete NPN that can be used as a control. The component devices can be used as a part of a circuit or as standalone discrete devices. Features Epitaxial Planar Die onstruction Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS ompliant (Note ) "Green" Device (Note 2) Mechanical Data ase: SOT-2 ase Material: Molded Plastic. "Green Molding" ompound. UL Flammability lassification Rating 9V- Moisture Sensitivity: Level per J-STD-2 Terminal onnections: See Diagram Terminals: Finish - Matte Tin annealed over opper leadframe. Solderable per MIL- STD -22, Method 28 Marking Information: See Page Ordering Information: See Page Weight:. grams (approximate) 2 SOT-2 Q EQ2 Q2 Q Q2 2 EQ BQ BQ2 Schematic and Pin onfiguration Maximum Ratings, Total unless otherwise specified haracteristic Symbol Value Unit Output urrent I out ma Thermal unless otherwise specified haracteristic Symbol Value Unit Power Dissipation (Note ) P D mw Power Derating Factor above 2 P der 2. mw/ Thermal Resistance, Junction to Ambient Air (Note ) (Equivalent to one heated junction of PNP transistor) R θja 7 /W Junction Operation and Storage Temperature Range T J, T STG - to + Notes:. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at Device mounted on FR- PB, inch x.8 inch x.2 inch; pad layout as shown on Page 7. DS79 Rev. - 2 of 7 LBNB

2 Maximum Ratings: Discrete PNP Transistor unless otherwise specified NEW PRODUT haracteristic Symbol Value Unit ollector-base Voltage V BO - V ollector-emitter Voltage V EO - V Emitter-Base Voltage V EBO - V Output urrent - continuous (Note ) I -2 ma Maximum Ratings: Discrete NPN Transistor unless otherwise specified haracteristic Symbol Value Unit ollector-base Voltage V BO V ollector-emitter Voltage V EO V Emitter-Base Voltage V EBO V Output urrent - continuous (Note ) I 2 ma Electrical haracteristics: Discrete PNP Transistor unless otherwise specified ollector-emitter Saturation Voltage V E(SAT) haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note ) ollector-base Breakdown Voltage V BO - V I = -ua, I E = ollector-emitter Breakdown Voltage V EO - V I = -.ma, I B = Emitter-Base Breakdown Voltage V EBO - V I E = -μa, I = ollector utoff urrent I EX - na V E = -V, V EB(OFF) = -.V Base utoff urrent I BL - na V E = -V, V EB(OFF) = -.V ollector-base ut Off urrent I BO - na V B = -V, I E = ollector-emitter ut Off urrent I EO - na V E = -V, I B = Emitter-Base ut Off urrent I EBO - na V EB = -V, I = ON HARATERISTIS (Note ) V E = -V, I = - μa V E = -V, I = - ma D urrent Gain h FE 2 V E = -V, I = - ma 9 V E = -V, I = - ma 2 V E = -V, I = - ma V E = -V, I = -2 ma -.8 I = - ma, I B = - ma -. V I = -ma, I B = -ma -. I = -2mA, I B = -2mA Equivalent on-resistance R E(SAT) 2. Ω I = -2mA, I B = -2mA Base-Emitter Turn-on Voltage V BE(ON) -.92 V V E = -V, I = -2mA Base-Emitter Saturation Voltage V BE(SAT) -.9 I = -ma, I B = -ma V -. I = -ma, I B = -ma SMALL SIGNAL HARATERISTIS Output apacitance OBO pf V B = -. V, f =. MHz, I E = Input apacitance IBO 8 pf V EB = -. V, f =. MHz, I = Input Impedance h IE 2 2 K Ω Voltage Feedback ratio h RE. x E- Small Signal urrent Gain h FE V E =.V, Ic = ma, f =. KHz Output Admittance h OE μs urrent Gain-Bandwidth Product f T 2 MHz V E = - 2V, I = -ma, f = MHz Noise Figure NF db V E = - V, Ic = - ua, R s = Ω, f = KHz SWITHING HARATERISTIS Delay Time t d ns V = -. V, I = - ma, Rise Time t r ns V BE(OFF) =.V, I B = -. ma Storage Time t s 22 ns V = -. V, I = - ma, Fall Time t f 7 ns I B = I B2 = -. ma Notes:. Short duration pulse test used to minimize self-heating effect. DS79 Rev of 7 LBNB

3 Electrical haracteristics: Discrete NPN Transistor unless otherwise specified NEW PRODUT ollector-emitter Saturation Voltage V E(SAT) haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note ) ollector-base Breakdown Voltage V BO V I = ua, I E = ollector-emitter Breakdown Voltage V EO V I =.ma, I B = Emitter-Base Breakdown Voltage V EBO V I E = μa, I = ollector utoff urrent I EX na V E = V, V EB(OFF) =.V Base utoff urrent I BL na V E = V, V EB(OFF) =.V ollector-base ut Off urrent I BO na V B = V, I E = ollector-emitter ut Off urrent I EO na V E = V, I B = Emitter-Base ut Off urrent I EBO na V EB = V, I = ON HARATERISTIS (Note ) V E = V, I = μa 7 V E = V, I = ma D urrent Gain h FE V E = V, I = ma 7 V E = V, I = ma V E = V, I = ma 2 V E = V, I = 2 ma.8 I = ma, I B = ma. V I = ma, I B = ma. I = 2mA, I B = 2mA Equivalent on-resistance R E(SAT).8 Ω I = 2mA, I B = 2mA Base-Emitter Turn-on Voltage V BE(ON).98 V V E = V, I = 2mA Base-Emitter Saturation Voltage V BE(SAT).9 I = ma, I B = ma V. I = ma, I B = ma SMALL SIGNAL HARATERISTIS Output apacitance OBO pf V B =. V, f =. MHz, I E = Input apacitance IBO 8 pf V EB =. V, f =. MHz, I = Input Impedance h IE 2 2 K Ω Voltage Feedback ratio h RE. x E- Small Signal urrent Gain h FE V E =.V, Ic = ma, f =. KHz Output Admittance h OE μs urrent Gain-Bandwidth Product f T 2 MHz V E = 2V, I = ma, f = MHz Noise Figure NF db V E = V, Ic = ua, R s = Ω, f = KHz SWITHING HARATERISTIS Delay Time t d ns V = -. V, I = ma, Rise Time t r ns V BE(OFF) =.V, I B =. ma Typical haracteristics, P D, POWER DISSIPATION (mw) 2 2 I, OLLETOR URRENT (ma) T A, AMBIENT TEMPERATURE ( ) Fig. Max Power Dissipation vs Ambient Temperature. V E, OLLETOR EMITTER URRENT (V) Fig. 2 Safe Operating Area DS79 Rev. - 2 of 7 LBNB

4 haracteristics of NPN Transistor (Q2):, 2 NEW PRODUT h FE, D URRENT GAIN OLLETOR URRENT (ma) I,, I, OLLETOR URRENT (ma) Fig. Typical D urrent Gain vs. ollector urrent 2 8 V E, OLLETOR-EMITTER VOLTAGE (V) Fig. ollector urrent vs. ollector-emitter Voltage. V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V). V BE, BASE-EMITTER VOLTAGE (V) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)..2.., I, OLLETOR URRENT (ma) Fig. ollector-emitter Saturation Voltage vs. ollector urrent , I, OLLETOR URRENT (ma) Fig. 7 Base-Emitter Saturation Voltage vs. ollector urrent ibo / obo, APAITANE (pf)., I, OLLETOR URRENT (ma) Fig. Base-Emitter Turn-on Voltage vs. ollector urrent V R, REVERSE VOLTAGE (V) Fig. 8 Typical apacitance haracteristics 2 DS79 Rev. - 2 of 7 LBNB

5 haracteristics of PNP Transistor (Q):, T A = V = V E 2 NEW PRODUT h FE,, D URRENT GAIN T A = 8 T A = - OLLETOR URRENT (ma) I,, I, OLLETOR URRENT (ma) Fig. 9 Typical D urrent Gain vs. ollector urrent 2 8 V E, OLLETOR - EMITTER VOLTAGE (V) Fig. ollector urrent vs. ollector-emitter Voltage V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)..., T A = 8 T A = - I /I = B T A = I, OLLETOR URRENT (ma) Fig. ollector-emitter Saturation Voltage vs. ollector urrent T A = 8 T A = - T A = V = V E., I, OLLETOR URRENT (ma) Fig. Base-Emitter Saturation Voltage vs. ollector urrent DS79 Rev. - 2 of 7 V BE, BASE-EMITTER VOLTAGE (V) IBO / OBO, APAITANE (pf) T A = - T A = V = V E T A = 8., I, OLLETOR URRENT (ma) Fig. 2 Base-Emitter Turn-On Voltage vs. ollector urrent V R, REVERSE VOLTAGE (V) Fig. Typical apacitance haracteristics LBNB

6 Application Details Vin EQ Q Q PNP Vout NEW PRODUT PNP Transistor and NPN Transistor integrated as one in LBNB can be used as a discrete entity for general purpose applications or as a part of a circuit to function as a Load Switch. When it is used as the latter as shown in Example ircuit Schematic, various input voltage sources can be used as long as they do not exceed the maximum rating of the device. These devices are designed to deliver continuous output load current up to maximum of ma. The use of the NPN as a switch eliminates the need for higher current required to overcome the gate charge in the event an N-MOSFET is used. are must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide power on demand and also consume less space. It mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Figure below for one example of typical application circuit used in conjunction with a voltage regulator as a part of power management system). ontrol BQ R K R2 22 Q2 Q2 EQ2 NPN BQ2 Example ircuit Schematic LOAD Typical Application ircuit V Supply U Vin Vin Load Switch U2 E_Q _Q Vout IN U OUT Point of Load ontrol Logic ircuit (PI, omparator, etc) OUT ontrol 2 B_Q E_Q2 B_Q2 _Q2 LBNB GND Voltage Regulator GND Diodes, Inc. Ordering Information (Note ) Device Marking ode Packaging Shipping LBNB-7 PM SOT-2 /Tape & Reel Notes:. For packaging details, go to our website at Marking Information PM YM PM = Product Type Marking ode YM = Date ode Marking Y = Year ex: T = 2 M = Month ex: 9 = September Date ode Key Year ode T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D DS79 Rev. - 2 of 7 LBNB

7 Package Outline Dimensions A NEW PRODUT K J H D F B L M SOT-2 Dim Min Max Typ A...8 B D.9 F. H J... K... L... M..2. α 8 All Dimensions in mm Suggested Pad Layout E E Z G Y Dimensions Value (in mm) Z.2 G. X. Y.8 2. E.9 X IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS79 Rev of 7 LBNB

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