Characteristic Symbol Value Unit Output Current I out 150 ma
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1 LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor with stable V ce_sat which does not depend on the input voltage and can support maximum continuous current of ma up to 2 (see fig. ). It also contains a discrete NPN that can be used as a control. The component devices can be used as a part of a circuit or as standalone discrete devices. Features Epitaxial Planar Die onstruction Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS ompliant (Note ) "Green" Device (Note 2) Mechanical Data ase: SOT-2 ase Material: Molded Plastic. "Green Molding" ompound. UL Flammability lassification Rating 9V- Moisture Sensitivity: Level per J-STD-2 Terminal onnections: See Diagram Terminals: Finish - Matte Tin annealed over opper leadframe. Solderable per MIL- STD -22, Method 28 Marking Information: See Page Ordering Information: See Page Weight:. grams (approximate) 2 SOT-2 Q EQ2 Q2 Q Q2 2 EQ BQ BQ2 Schematic and Pin onfiguration Maximum Ratings, Total unless otherwise specified haracteristic Symbol Value Unit Output urrent I out ma Thermal unless otherwise specified haracteristic Symbol Value Unit Power Dissipation (Note ) P D mw Power Derating Factor above 2 P der 2. mw/ Thermal Resistance, Junction to Ambient Air (Note ) (Equivalent to one heated junction of PNP transistor) R θja 7 /W Junction Operation and Storage Temperature Range T J, T STG - to + Notes:. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at Device mounted on FR- PB, inch x.8 inch x.2 inch; pad layout as shown on Page 7. DS79 Rev. - 2 of 7 LBNB
2 Maximum Ratings: Discrete PNP Transistor unless otherwise specified NEW PRODUT haracteristic Symbol Value Unit ollector-base Voltage V BO - V ollector-emitter Voltage V EO - V Emitter-Base Voltage V EBO - V Output urrent - continuous (Note ) I -2 ma Maximum Ratings: Discrete NPN Transistor unless otherwise specified haracteristic Symbol Value Unit ollector-base Voltage V BO V ollector-emitter Voltage V EO V Emitter-Base Voltage V EBO V Output urrent - continuous (Note ) I 2 ma Electrical haracteristics: Discrete PNP Transistor unless otherwise specified ollector-emitter Saturation Voltage V E(SAT) haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note ) ollector-base Breakdown Voltage V BO - V I = -ua, I E = ollector-emitter Breakdown Voltage V EO - V I = -.ma, I B = Emitter-Base Breakdown Voltage V EBO - V I E = -μa, I = ollector utoff urrent I EX - na V E = -V, V EB(OFF) = -.V Base utoff urrent I BL - na V E = -V, V EB(OFF) = -.V ollector-base ut Off urrent I BO - na V B = -V, I E = ollector-emitter ut Off urrent I EO - na V E = -V, I B = Emitter-Base ut Off urrent I EBO - na V EB = -V, I = ON HARATERISTIS (Note ) V E = -V, I = - μa V E = -V, I = - ma D urrent Gain h FE 2 V E = -V, I = - ma 9 V E = -V, I = - ma 2 V E = -V, I = - ma V E = -V, I = -2 ma -.8 I = - ma, I B = - ma -. V I = -ma, I B = -ma -. I = -2mA, I B = -2mA Equivalent on-resistance R E(SAT) 2. Ω I = -2mA, I B = -2mA Base-Emitter Turn-on Voltage V BE(ON) -.92 V V E = -V, I = -2mA Base-Emitter Saturation Voltage V BE(SAT) -.9 I = -ma, I B = -ma V -. I = -ma, I B = -ma SMALL SIGNAL HARATERISTIS Output apacitance OBO pf V B = -. V, f =. MHz, I E = Input apacitance IBO 8 pf V EB = -. V, f =. MHz, I = Input Impedance h IE 2 2 K Ω Voltage Feedback ratio h RE. x E- Small Signal urrent Gain h FE V E =.V, Ic = ma, f =. KHz Output Admittance h OE μs urrent Gain-Bandwidth Product f T 2 MHz V E = - 2V, I = -ma, f = MHz Noise Figure NF db V E = - V, Ic = - ua, R s = Ω, f = KHz SWITHING HARATERISTIS Delay Time t d ns V = -. V, I = - ma, Rise Time t r ns V BE(OFF) =.V, I B = -. ma Storage Time t s 22 ns V = -. V, I = - ma, Fall Time t f 7 ns I B = I B2 = -. ma Notes:. Short duration pulse test used to minimize self-heating effect. DS79 Rev of 7 LBNB
3 Electrical haracteristics: Discrete NPN Transistor unless otherwise specified NEW PRODUT ollector-emitter Saturation Voltage V E(SAT) haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note ) ollector-base Breakdown Voltage V BO V I = ua, I E = ollector-emitter Breakdown Voltage V EO V I =.ma, I B = Emitter-Base Breakdown Voltage V EBO V I E = μa, I = ollector utoff urrent I EX na V E = V, V EB(OFF) =.V Base utoff urrent I BL na V E = V, V EB(OFF) =.V ollector-base ut Off urrent I BO na V B = V, I E = ollector-emitter ut Off urrent I EO na V E = V, I B = Emitter-Base ut Off urrent I EBO na V EB = V, I = ON HARATERISTIS (Note ) V E = V, I = μa 7 V E = V, I = ma D urrent Gain h FE V E = V, I = ma 7 V E = V, I = ma V E = V, I = ma 2 V E = V, I = 2 ma.8 I = ma, I B = ma. V I = ma, I B = ma. I = 2mA, I B = 2mA Equivalent on-resistance R E(SAT).8 Ω I = 2mA, I B = 2mA Base-Emitter Turn-on Voltage V BE(ON).98 V V E = V, I = 2mA Base-Emitter Saturation Voltage V BE(SAT).9 I = ma, I B = ma V. I = ma, I B = ma SMALL SIGNAL HARATERISTIS Output apacitance OBO pf V B =. V, f =. MHz, I E = Input apacitance IBO 8 pf V EB =. V, f =. MHz, I = Input Impedance h IE 2 2 K Ω Voltage Feedback ratio h RE. x E- Small Signal urrent Gain h FE V E =.V, Ic = ma, f =. KHz Output Admittance h OE μs urrent Gain-Bandwidth Product f T 2 MHz V E = 2V, I = ma, f = MHz Noise Figure NF db V E = V, Ic = ua, R s = Ω, f = KHz SWITHING HARATERISTIS Delay Time t d ns V = -. V, I = ma, Rise Time t r ns V BE(OFF) =.V, I B =. ma Typical haracteristics, P D, POWER DISSIPATION (mw) 2 2 I, OLLETOR URRENT (ma) T A, AMBIENT TEMPERATURE ( ) Fig. Max Power Dissipation vs Ambient Temperature. V E, OLLETOR EMITTER URRENT (V) Fig. 2 Safe Operating Area DS79 Rev. - 2 of 7 LBNB
4 haracteristics of NPN Transistor (Q2):, 2 NEW PRODUT h FE, D URRENT GAIN OLLETOR URRENT (ma) I,, I, OLLETOR URRENT (ma) Fig. Typical D urrent Gain vs. ollector urrent 2 8 V E, OLLETOR-EMITTER VOLTAGE (V) Fig. ollector urrent vs. ollector-emitter Voltage. V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V). V BE, BASE-EMITTER VOLTAGE (V) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)..2.., I, OLLETOR URRENT (ma) Fig. ollector-emitter Saturation Voltage vs. ollector urrent , I, OLLETOR URRENT (ma) Fig. 7 Base-Emitter Saturation Voltage vs. ollector urrent ibo / obo, APAITANE (pf)., I, OLLETOR URRENT (ma) Fig. Base-Emitter Turn-on Voltage vs. ollector urrent V R, REVERSE VOLTAGE (V) Fig. 8 Typical apacitance haracteristics 2 DS79 Rev. - 2 of 7 LBNB
5 haracteristics of PNP Transistor (Q):, T A = V = V E 2 NEW PRODUT h FE,, D URRENT GAIN T A = 8 T A = - OLLETOR URRENT (ma) I,, I, OLLETOR URRENT (ma) Fig. 9 Typical D urrent Gain vs. ollector urrent 2 8 V E, OLLETOR - EMITTER VOLTAGE (V) Fig. ollector urrent vs. ollector-emitter Voltage V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)..., T A = 8 T A = - I /I = B T A = I, OLLETOR URRENT (ma) Fig. ollector-emitter Saturation Voltage vs. ollector urrent T A = 8 T A = - T A = V = V E., I, OLLETOR URRENT (ma) Fig. Base-Emitter Saturation Voltage vs. ollector urrent DS79 Rev. - 2 of 7 V BE, BASE-EMITTER VOLTAGE (V) IBO / OBO, APAITANE (pf) T A = - T A = V = V E T A = 8., I, OLLETOR URRENT (ma) Fig. 2 Base-Emitter Turn-On Voltage vs. ollector urrent V R, REVERSE VOLTAGE (V) Fig. Typical apacitance haracteristics LBNB
6 Application Details Vin EQ Q Q PNP Vout NEW PRODUT PNP Transistor and NPN Transistor integrated as one in LBNB can be used as a discrete entity for general purpose applications or as a part of a circuit to function as a Load Switch. When it is used as the latter as shown in Example ircuit Schematic, various input voltage sources can be used as long as they do not exceed the maximum rating of the device. These devices are designed to deliver continuous output load current up to maximum of ma. The use of the NPN as a switch eliminates the need for higher current required to overcome the gate charge in the event an N-MOSFET is used. are must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide power on demand and also consume less space. It mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Figure below for one example of typical application circuit used in conjunction with a voltage regulator as a part of power management system). ontrol BQ R K R2 22 Q2 Q2 EQ2 NPN BQ2 Example ircuit Schematic LOAD Typical Application ircuit V Supply U Vin Vin Load Switch U2 E_Q _Q Vout IN U OUT Point of Load ontrol Logic ircuit (PI, omparator, etc) OUT ontrol 2 B_Q E_Q2 B_Q2 _Q2 LBNB GND Voltage Regulator GND Diodes, Inc. Ordering Information (Note ) Device Marking ode Packaging Shipping LBNB-7 PM SOT-2 /Tape & Reel Notes:. For packaging details, go to our website at Marking Information PM YM PM = Product Type Marking ode YM = Date ode Marking Y = Year ex: T = 2 M = Month ex: 9 = September Date ode Key Year ode T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D DS79 Rev. - 2 of 7 LBNB
7 Package Outline Dimensions A NEW PRODUT K J H D F B L M SOT-2 Dim Min Max Typ A...8 B D.9 F. H J... K... L... M..2. α 8 All Dimensions in mm Suggested Pad Layout E E Z G Y Dimensions Value (in mm) Z.2 G. X. Y.8 2. E.9 X IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS79 Rev of 7 LBNB
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Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More information2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E
B847...B8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz omplementary types: B87...B86...(PNP)
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Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:
More informationType Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23
SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration
More informationBC BC Pb-containing package may be available upon special request
B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8...
More informationCOMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationType Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More informationType Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q
More information150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
More informationPNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357
DEVICES PNP SILICON SITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
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2N441 TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM:.6 W(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 6 V * Operating and storage junction
More information200mW, PNP Small Signal Transistor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and
More informationFeatures. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel
N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage
More informationDATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More information2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
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MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationV (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.
QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
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DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
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HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar
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Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
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NPN GENERAL PURPOSE SWITHING TRANSISTOR OLTAGE 4 olt POWER 225 mwatt FEATURES NPN epitaxial silicon, planar design ollectoremitter voltage E = 4 ollector current I = 6mA Lead free in compliance with EU
More informationabsolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
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2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
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