2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

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1 2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage V CE(sat) =.6 I C = A Excellent Power Dissipation, P D = 3 T C = 25 C Excellent Safe Operating Area Gain Specified to I C = A Complement to NPN 2N4921, 2N4922, 2N4923 PbFree Package is Available* 3. A, 48 V, 3 W GENERAL PURPOSE POWER TRANSISTORS MAXIMUM RATINGS Collector Emitter Voltage Collector Base Voltage Rating Symbol Value Unit 2N4918 2N4919 2N492 2N4918 2N4919 2N492 V CEO V CBO Emitter Base Voltage V EBO 5. Collector Current Continuous (Note 1) I C (Note 2) 3. Adc Base Current I B Adc Total Power T A = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 3.24 W W/ C T J, T stg 65 to +15 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The A max I C value is based upon JEDEC current gain requirements. The 3. A max value is based upon actual currenthandling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. THERMAL CHARACTERISTICS (Note 3) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase JC 4.16 C/W 3. Recommend use of thermal compound for lowest thermal resistance. TO225 CASE 77 STYLE 1 MARKING DIAGRAM YWW 2N 49xx xx = 18, 19, 2 Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet FRONT VIEW BACK VIEW *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 24 January, 217 Rev Publication Order Number: 2N4918/D

2 2N4918 2N492 Series Î ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Max Unit Î OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 4) V CEO(sus) (I C =.1 Adc, I B = ) 2N4918 ÎÎ 4 Î 2N N492 ÎÎ 8 Î Collector Cutoff Current I CEO madc (V CE = 2, I B = ) 2N4918 ÎÎ Î.5 (V CE = 3, I B = ) 2N4919 (V CE = 4, I B.5 = ) 2N492.5 Î Collector Cutoff Current I (V CE = Rated V CEO, V BE(off) = 1.5 ) CEX madc Î (V CE = Rated V CEO, V BE(off) = 1.5, T C = 125 C ÎÎ.1 Î.5 Collector Cutoff Current I CBO Î.1 madc (V CB = Rated V CB, I E = ) Î Emitter Cutoff Current I (V BE = 5., I C = ) EBO madc Î Î ON CHARACTERISTICS Î DC Current Gain (Note 4) h FE (I C = 5 madc, V CE = ) ÎÎ 4 Î (I C = 5 madc, V CE = ) 3 15 (I C = Adc, V CE = ) ÎÎ 1 Î Î CollectorEmitter Saturation Voltage (Note 4) V CE(sat) (I C = Adc, I B =.1 Adc) ÎÎ Î.6 Î BaseEmitter Saturation Voltage (Note 4) V BE(sat) Î (I C = Adc, I B =.1 Adc) ÎÎ 1.3 Î BaseEmitter On Voltage (Note 4) V BE(on) Î 1.3 (I C = Adc, V CE = ) Î SMALLSIGNAL CHARACTERISTICS Î Î CurrentGain Bandwidth Product (I C = 25 madc, V CE = 1, f = MHz) f T 3. MHz Î Output Capacitance (V CB = 1, I E =, f = 1 khz) C ob Î 1 pf Î SmallSignal Current Gain (I C = 25 madc, V CE = 1, f = khz) 25 Î 4. Pulse Test: PW 3 s, Duty Cycle 2.% h fe ORDERING INFORMATION Device Package Shipping 2N4918 TO225 5 Unit / Bulk 2N4919 TO225 5 Unit / Bulk 2N492 TO225 5 Unit / Bulk 2N492G TO225 (PbFree) 5 Unit / Bulk For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2

3 2N4918 2N492 Series 4 PD, POWER DISSIPATION (WATTS) T C, CASE TEMPERATURE ( C) Figure 1. Power Derating V BE(off) V in APPROX -11 V V in APPROX -11 V t 1 t 2 t 3 TURN-OFF PULSE V CC APPROX 9. V V in C jd << C eb t 1 < 15 ns 1 < t 2 < 5 s t 3 < 15 ns DUTY CYCLE 2.% R B R C + 4. V SCOPE R B and R C varied to obtain desired current levels t, TIME ( s) μ V CC = 3 V t d V CC = 3 V I C /I B = 2 V CC = 6 V.1 V.7 CC = 3 V V BE(off) = t r I C /I B = 1, UNLESS NOTED T J = 15 C V BE(off) = 2. V V CC = 6 V Figure 2. Switching Time Equivalent Test Circuit Figure 3. TurnOn Time 3

4 2N4918 2N492 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE JC (t) = r(t) JC JC = 4.16 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME (ms) Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) T J = 15 C 5. ms PULSE CURVES APPLY BELOW RATED V CEO V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY T C = 25 C ms 1 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. ActiveRegion Safe Operating Area t s, STORAGE TIME ( s) μ t s = t s - 1/8 t f I C /I B = 1 I C /I B = T J = 15 C I B1 = I B2 t f, FALL TIME ( s) μ I C /I B = 1 I C /I B = T J = 15 C V CC = 3 V I B1 = I B2 Figure 6. Storage Time Figure 7. Fall Time 4

5 2N4918 2N492 Series TYPICAL DC CHARACTERISTICS hfe, DC CURRENT GAIN T J = 15 C 25 C - 55 C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I B, BASE CURRENT (ma) Figure 8. Current Gain V CE = V I C =.1 A.25 A.5 A A Figure 9. Collector Saturation Region R BE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) I C I CES I CES VALUES OBTAINED FROM FIGURE 13 I C = 1 I CES I C = 2x I CES V CE = 3 V VOLTAGE (VOLTS) V I C /I B = 1.6 V V CE = 2. V.3 V I C /I B = T J, JUNCTION TEMPERATURE ( C) Figure 1. Effects of BaseEmitter Resistance Figure 11. On Voltage, COLLECTOR CURRENT ( A) μ IC T J = 15 C 1 C 1-2 I C = I CES V CE = 3 V C 1 3 REVERSE FORWARD V BE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector CutOff Region TEMPERATURE COEFFICIENTS (mv/ C) *APPLIES FOR I C /I B < * VC FOR V CE(sat) T J = 1 C to 15 C VB FOR V BE h VCE V T J = - 55 C to +1 C Figure 13. Temperature Coefficients 5

6 2N4918 2N492 Series PACKAGE DIMENSIONS TO225 CASE 779 ISSUE AD P Q E L1 D A1 A PIN 4 BACKSIDE TAB L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. MILLIMETERS DIM MIN MAX A A1 1.5 b.6.9 b c D E e L L P Q STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative 2N4918/D