E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2

Size: px
Start display at page:

Download "E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2"

Transcription

1 OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification and Switching Lead Free By Design/RoHS ompliant (Note 2) "Green Device" (Note 3) Mechanical Data ase: SOT-26 ase Material: Molded Plastic, Green Molding ompound. UL Flammability lassification Rating 94- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish - Matte Tin annealed over opper leadframe. Solderable per MIL-STD-22, Method 28 Terminal onnections: See Diagram Ordering & Date ode Information: See Page 6 Marking Information: See Page 6 Weight:.6 grams (approximate) K J 1 B 1 A E 1 H D 2 E 2 B 2 F B Note: E1, B1, and 1 = 2222A Type (NPN) E2, B2, and 2 = 297A Type (PNP) Type marking indicates orientation L M SOT-26 Dim Min Max Typ A B D.95 F.55 H J K L M α 8 All Dimensions in mm 1 E 1 2 B 1 E 2 B 2 Maximum Ratings: 2222A Type A = 25 unless otherwise specified haracteristic Symbol 2222A (NPN) Unit ollector-base oltage BO 75 ollector-emitter oltage EO 4 Emitter-Base oltage EBO 6. ollector urrent - ontinuous I 6 ma Maximum Ratings: 297A Type A = 25 unless otherwise specified haracteristic Symbol 297A (PNP) Unit ollector-base oltage BO -6 ollector-emitter oltage EO -6 Emitter-Base oltage EBO -5. ollector urrent - ontinuous I -6 ma Maximum Ratings: A = 25 unless otherwise specified haracteristic Symbol alue Unit Power Dissipation (Note 1) P D 3 mw Thermal Resistance, Junction to Ambient (Note 1) R θja 417 /W Operating and Storage Temperature Range T j, T STG -55 to +15 Notes: 1. Device mounted on FR-4 PB, 1 inch x.85 inch x.62 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP21, which can be found on our website at 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at DS31217 Rev of 6

2 Electrical haracteristics: 2222A Type A = 25 unless otherwise specified NEW PRODUT haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note 4) ollector-base Breakdown oltage (BR)BO 75 I = 1μA, I E = ollector-emitter Breakdown oltage (BR)EO 4 I = 1mA, I B = Emitter-Base Breakdown oltage (BR)EBO 6. I E = 1μA, I = ollector utoff urrent I BO 1 na B = 6, I E = μa B = 6, I E =, T A = 15 ollector utoff urrent I EX 1 na E = 6, EB(OFF) = 3. Emitter utoff urrent I EBO 1 na EB = 3., I = Base utoff urrent I BL 2 na E = 6, EB(OFF) = 3. ON HARATERISTIS (Note 4) D urrent Gain ollector-emitter Saturation oltage E(SAT) h FE I = μa, E = 1 I = 1.mA, E = 1 I = 1mA, E = 1 I = 15mA, E = 1 I = 5mA, E = 1 I = 1mA, E = 1, T A = -55 I = 15mA, E = 1. I = 15mA, I B = 15mA I = 5mA, I B = 5mA I = 15mA, I B = 15mA I = 5mA, I B = 5mA.6 Base-Emitter Saturation oltage BE(SAT) SMALL SIGNAL HARATERISTIS Output apacitance obo 8 pf B = 1, f = 1.MHz, I E = Input apacitance ibo 25 pf EB =.5, f = 1.MHz, I = urrent Gain-Bandwidth Product f T 3 MHz SWITHING HARATERISTIS Delay Time t d 1 ns Rise Time t r 25 ns Storage Time t s 225 ns Fall Time t f 6 ns E = 2, I = 2mA, f = MHz = 3, I = 15mA, BE(off) = -.5, I B1 = 15mA = 3, I = 15mA, I B1 = I B2 = 15mA Notes: 4. Pulse test: pulse width 3μS, duty cycle 2%. DS31217 Rev of 6

3 Electrical haracteristics: 297A Type A = 25 unless otherwise specified NEW PRODUT haracteristic Symbol Min Max Unit Test ondition OFF HARATERISTIS (Note 4) ollector-base Breakdown oltage (BR)BO -6 I = -1μA, I E = ollector-emitter Breakdown oltage (BR)EO -6 I = -1mA, I B = Emitter-Base Breakdown oltage (BR)EBO -5. I E = -1μA, I = ollector utoff urrent I BO -1 na B = -5, I E = μa B = -5, I E =, T A = 125 ollector utoff urrent I EX -5 na E = -3, EB(OFF) = -.5 Base utoff urrent I BL -5 na E = -3, EB(OFF) = -.5 ON HARATERISTIS (Note 4) D urrent Gain ollector-emitter Saturation oltage E(SAT) Base-Emitter Saturation oltage BE(SAT) h FE I = -µa, E = -1 I = -1.mA, E = -1 I = -1mA, E = -1 I = -15mA, E = -1 I = -5mA, E = -1 I = -15mA, I B = -15mA I = -5mA, I B = -5mA I = 15mA, I B = 15mA I = 5mA, I B = 5mA SMALL SIGNAL HARATERISTIS Output apacitance obo 8. pf B = -1, f = 1.MHz, I E = Input apacitance ibo 3 pf EB = -2., f = 1.MHz, I = urrent Gain-Bandwidth Product f T 2 MHz E = -2, I = -5mA, f = MHz SWITHING HARATERISTIS Turn-On Time t on 45 ns Delay Time t d 1 ns Rise Time t r 4 ns Turn-Off Time t off ns Storage Time t s 8 ns Fall Time t f 3 ns = -3, I = -15mA, I B1 = -15mA = -6., I = -15mA, I B1 = I B2 = -15mA P D, POWER DISSIPATION (mw) T A, AMBIENT TEMPERATURE ( ) Fig. 1, Max Power Dissipation vs. Ambient Temperature DS31217 Rev of 6

4 NEW PRODUT BE(ON), BASE EMITTER TURN-ON OLTAGE () I, OLLETOR URRENT (ma) E(SAT), OLLETOR EMITTER SATURATION OLTAGE () BE(SAT), BASE EMITTER SATURATION OLTAGE () I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) APAITANE (pf) E = 2 f = MHz, REERSE OLTAGE () R Fig. 7 Typical Gain-Bandwidth Product vs. ollector urrent (2222A) DS31217 Rev of 6

5 NEW PRODUT h FE, D URRENT GAIN - BE(ON), BASE-EMITTER TURN-ON OLTAGE () -I, OLLETOR URRENT (A) Fig. 8 Typical D urrent Gain vs. ollector urrent (297A) , Fig. 1 Typical Base-Emitter Turn-On oltage vs. ollector urrent (297A) - E(SAT), OLLETOR-EMITTER SATURATION OLTAGE () - BE(SAT), BASE-EMITTER SATURATION OLTAGE () Fig. 9 Typical ollector-emitter Saturation oltage vs. ollector urrent (297A) I /I B = , Fig. 11 Typical Base-Emitter Saturation oltage vs. ollector urrent (297A) APAITANE (pf) R, REERSE OLTAGE () Fig. 12 Typical apacitance haracteristics (297A) f, T GAIN BANDWIDTH PRODUT (MHz) Fig. 13 Typical Gain-Bandwidth Product vs. ollector urrent (297A) DS31217 Rev of 6

6 Ordering Information (Note 5) Device Packaging Shipping -7 SOT-26 3/Tape & Reel Notes: 5. For packaging details, go to our website at Marking Information NEW PRODUT D27 YM D27 = Product Type Marking ode YM = Date ode Marking Y = Year ex: U = 27 M = Month ex: 9 = September Date ode Key Year ode U W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31217 Rev of 6

Lead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified

Lead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified Lead-free Green MMDT2227M OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low

More information

Characteristic Symbol Value Unit Output Current I out 150 ma

Characteristic Symbol Value Unit Output Current I out 150 ma LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like

More information

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair

More information

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section 4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free

More information

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BT52C2V - BT52C39 SURFACE MOUNT ENER DIODE Features Planar Die Construction

More information

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET

More information

MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23

MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23 MMBT904-G (NPN) RoHS Device Features -Epitaxial planar die construction -s complementary type, the PNP transistor MMBT904-G is recommended 0.0 (.) 0.047 (.0) SOT- 0.0 (.04) 0. (.80) 0.080 (.04) 0.070 (.78)

More information

istributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 Pb-Free Packages are Available LB856ALT1G Series 3 MAXIMUM RATINGS

More information

MMBT2369A NPN Switching Transistor

MMBT2369A NPN Switching Transistor MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

More information

General Purpose Transistors

General Purpose Transistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements. 3 1 2 SO23 MAXIMUM RAINGS

More information

FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier

FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier FFB39 / FMB39 / MMPQ39 NPN Multi-hip General Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz

More information

PN4258. Symbol Parameter Value Units

PN4258. Symbol Parameter Value Units PN8 PN8 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to ma. Sourced from process 6. TO-9. Emitter. Base 3. ollector Absolute Maximum Ratings*

More information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state

More information

BC807-16W/-25W/-40W Taiwan Semiconductor

BC807-16W/-25W/-40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS

More information

350mW, PNP Small Signal Transistor

350mW, PNP Small Signal Transistor 35mW, PNP Small Signal Traistor FEATURES - Epitaxial planar die cotruction - Surface device type mounting - Moisture seitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version

More information

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and

More information

BC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS B817AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volts POWER 33 mw SOT23 Unit: inch(mm) FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design ollector current I =

More information

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23 PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units

SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units B E N39 TO-9 MMBT39 SOT-3 Mark: A B E PZT39 B SOT-3 E N39 / MMBT39 / PZT39 This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz

More information

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23 SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking

More information

200mW, PNP Small Signal Transistor

200mW, PNP Small Signal Transistor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and

More information

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23 PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount

More information

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23 SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration

More information

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type

More information

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface

More information

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q

More information

MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS

MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS NPN GENERAL PURPOSE SWITHING TRANSISTOR OLTAGE 4 olt POWER 225 mwatt FEATURES NPN epitaxial silicon, planar design ollectoremitter voltage E = 4 ollector current I = 6mA Lead free in compliance with EU

More information

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package

More information

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description

More information

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements.

More information

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter

More information

General Purpose Transistors

General Purpose Transistors LESHN RDIO OMPNY, LD. General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance

More information

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector

More information

MMBT2222A-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS

MMBT2222A-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS MMBT2222AAU NPN GENERAL PURPOSE SWITHING TRANSISTOR VOLTAGE 4 Volt POWER 225 mwatt FEATURES NPN epitaxial silicon, planar design ollectoremitter voltage VE = 4V ollector current I = 6mA Acqire quality

More information

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary

More information

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 MUN534W, NSB4YPXV6, NSB4YPP6 omplementary Bias Resistor Transistors R = 0 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5401. PNP Silicon. These are Pb Free Devices* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage

More information

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS MARKING DIAGRAM , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value

More information

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile

More information

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

More information

BC BC Pb-containing package may be available upon special request

BC BC Pb-containing package may be available upon special request B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8...

More information

COMPLEMENTARY NPN/PNP TRANSISTOR

COMPLEMENTARY NPN/PNP TRANSISTOR SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

More information

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage

More information

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E B847...B8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz omplementary types: B87...B86...(PNP)

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:

More information

2N3904 SMALL SIGNAL NPN TRANSISTOR

2N3904 SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB

More information

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS

More information

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM 2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140

More information

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features. Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

Low VF SMD Schottky Barrier Diode

Low VF SMD Schottky Barrier Diode Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing

More information

(Notes 6 & 8) Top View

(Notes 6 & 8) Top View NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N

More information

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14. DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities

More information

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability

More information

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

BC846ALT1 Series. General Purpose Transistors. NPN Silicon BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages

More information

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

More information

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13. DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability

More information

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1

More information

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices.  Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode Small Signal Product mw Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general

More information

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase

More information

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4) YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.V - This

More information

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,

More information

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available*   Features MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO

More information

Characteristic Symbol Value Units V GSS

Characteristic Symbol Value Units V GSS NEW PROUCT Features Low On-Resistance: R S(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair lso vailable in Lead Free Version Mechanical

More information

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS 2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation

More information

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

More information

2N2904A-2N2905A 2N2906A-2N2907A

2N2904A-2N2905A 2N2906A-2N2907A 2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and

More information

Optocoupler, Phototransistor Output, Dual Channel

Optocoupler, Phototransistor Output, Dual Channel Optocoupler, Phototransistor Output, Dual ILD6 Vishay Semiconductors FEATURES Dual version of SFH6 series i79073_7 A A 2 3 4 8 7 6 5 E E Isolation test voltage, 5300 V RMS V Esat 0.25 ( 0.4) V at I F =

More information

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27. DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification

More information

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces

More information

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted

More information

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

absolute maximum ratings at 25 C case temperature (unless otherwise noted) ,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)

More information

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction

More information

RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR

RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS.16 (3.).11 (.8).43 (1.1).3 (.9) FRONT. (.).87 (.).71 (1.8).39 (1.).87 (.).71 (1.8) TOP.3 (.9) R.17 (.4) COLLECTOR MARK 1 NOTE:.16 (.4) BACK 1. Emitter. Collector 3. Tolerance of ±.1

More information