430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

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DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.

It is qualified to AEC-Q, supported by a PPAP and is ideal for use in: Power Management Functions DC-DC Converters Battery Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching

1 DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 V GS = V 57mA V GS =.5V V GS = -V V GS = -5V Description and Applications ma -ma -ma This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q, supported by a PPAP and is ideal for use in: Power Management Functions DC-DC Converters Battery Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green Device (Note ) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note ) Mechanical Data Case: SOT5 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-, Method e Weight:. grams (Approximate) SOT5 D G S D D G G ESD PROTECTED Top View Bottom View S G D Gate Protection Gate Protection Diode S Diode Q N-CHANNEL Q P-CHANNEL Top View Equivalent Circuit S Ordering Information (Note 5) Part Number Case Packaging DMCDSVQ-7 SOT5,/Tape & Reel DMCDSVQ- SOT5,/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /95/EC (RoHS) & /5/EU (RoHS ) compliant.. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds.. Automotive products are AEC-Q qualified and are PPAP capable. Refer to 5. For packaging details, go to our website at DMCDSVQ Document number: DS9 Rev. - of November 7

2 DMCDSVQ Marking Information S YM S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 7) M = Month (ex: 9 = September) Date Code Key Year 7 9 Code D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D Maximum Ratings (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Q_Value Q_Value Unit Drain-Source Voltage V DSS -5 V Gate-Source Voltage V GSS ± ± V Continuous Drain Current (Note 7) N-Channel: V GS = V P-Channel: V GS = -V Steady State T A = +5 C T A = +7 C Pulsed Drain Current (μs Pulse, Duty Cycle = %) I DM, - ma Maximum Body Diode Continuous Current (Note 7) I S 5 - ma I D ma Thermal Characteristics (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note ) P D.5 W Thermal Resistance, Junction to Ambient (Note ) Steady State R JA 5 C/W Total Power Dissipation (Note 7) P D. W Thermal Resistance, Junction to Ambient (Note 7) Steady State R JA 5 C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes:. Device mounted on FR- substrate PC board, oz copper, with minimum recommended pad layout. 7. Device mounted on FR- substrate PC board, oz copper, with inch square copper plate. DMCDSVQ Document number: DS9 Rev. - of November 7

3 DMCDSVQ Electrical Characteristics - Q N-CHANNEL (@T A = +5 C, unless otherwise specified.) OFF CHARACTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = 5μA Zero Gate Voltage Drain Current I DSS µa V DS =V, V GS = V Gate-Source Leakage I GSS ± µa V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH)..5 V V DS = V GS, I D = 5μA Static Drain-Source On-Resistance R DS(ON).7 V GS = V, I D = 5mA Ω V GS =.5V, I D = ma Diode Forward Voltage V SD. V V GS = V, I S = 5mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss. pf Reverse Transfer Capacitance C rss.9 pf Total Gate Charge Q g. nc Gate-Source Charge Q gs.5 nc Gate-Drain Charge Q gd.9 nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R.7 ns Turn-Off Delay Time t D(OFF) 5. ns Turn-Off Fall Time t F.5 ns V DS = 5V, V GS = V, f =.MHz V GS =.5V, V DS = V, I D = 5mA V DD = V, V GS = V, R g = 5Ω, I D = ma Electrical Characteristics - Q P-CHANNEL (@T A = +5 C, unless otherwise specified.) OFF CHARACTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -5 V V GS = V, I D = -5μA Zero Gate Voltage Drain Current I DSS - µa V DS = -5V, V GS = V Gate-Source Leakage I GSS ± µa V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V V DS = V GS, I D = -5μA Static Drain-Source On-Resistance R DS(ON) V GS = -V, I D = -5mA Ω V GS = -5V, I D = -ma Diode Forward Voltage V SD -. V V GS = V, I S = -5mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss. pf Reverse Transfer Capacitance C rss. pf Total Gate Charge Q g. nc Gate-Source Charge Q gs. nc Gate-Drain Charge Q gd. nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns Turn-Off Delay Time t D(OFF). ns Turn-Off Fall Time t F 9.5 ns V DS = -5V, V GS = V, f =.MHz V GS = -.5V, V DS = -V, I D = -5mA V DD = -V, V GS = -V, R g = 5Ω, I D = -7mA Notes:. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMCDSVQ Document number: DS9 Rev. - of November 7

4 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) DMCDSVQ Typical Characteristics - N-CHANNEL..9. V GS =.V V GS =.5V V GS = 5.V.9. V DS = 5V.7 V GS =.V.7. V GS =.5V V GS =.V. T J =5... V GS =.V V GS =.V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic.. T J =5 T J =5 T J =5 T J = V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5.5 V GS =.5V I D = 5mA V GS = V.5 I D = ma I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5.5 V GS = V T J =5 T J =5.5 V GS = V, I D = 5mA.5.5 T J =5 V GS =.5V, I D = ma.5 T J =5 T J = Figure 5. Typical On-Resistance vs. Drain Current and Temperature Figure. On-Resistance Variation with Temperature DMCDSVQ Document number: DS9 Rev. - of November 7

5 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THEESHOLD VOLTAGE (V) DMCDSVQ Typical Characteristics - N-CHANNEL (Cont.) V GS =.5V, I D = ma.5.5 I D = ma I D = 5μA.5 V GS = V, I D = 5mA Figure 7. On-Resistance Variation with Temperature Figure. Gate Threshold Variation and Junction Temperature.9. V GS = V f=mhz C iss T J = 5 T J = 5 T J = 5 T J = 5 T J = V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C oss C rss 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) Limited P W =µs DMCDSVQ Document number: DS9 Rev. - V DS = V, I D = 5mA Qg (nc) Figure. Gate Charge 5 of... P W =ms P W =ms P W =ms P T J(Max) = 5 T C = 5 W =s Single Pulse P W =s DC DUT on *MRP Board V GS = V. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area November 7

6 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON- RESISTANCE (W) DMCDSVQ Typical Characteristics - P-CHANNEL V GS = -.V V GS = -.5V V GS = -5.V V GS = -.V V GS = -.5V V GS =-.V..5.. V DS = -5V T J =-55 T J =5 T J =5 T J =5 T J =5... V GS = -.V V GS = -.5V V GS = -.V... 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic 5 7 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic 5 V GS = -5V 9 7 V GS = -V I D, DRAIN-SOURCE CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Gate Voltage 5 I D = -5mA V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic V GS = -V.5 V GS = -V, I D = -5mA T J =5 T J =5 T J =5 T J = DMCDSVQ Document number: DS9 Rev. - T J =5 Figure 7. Typical On-Resistance vs. Drain Current and Temperature of.5.5 V GS = -5.V, I D = -ma Figure. On-Resistance Variation with Temperature November 7

7 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDSVQ Typical Characteristics - P-CHANNEL (Cont.) 7 5 V GS = -V, I D = -5mA.5 I D = -ma I D = -5μA V GS = -5.V, I D = -ma Figure 9. On-Resistance Variation with Temperature Figure. Gate Threshold Variation vs. Junction Temperature..7 V GS = V f=mhz..5 C iss.. T J = 5 C oss.. T J = 5 T J = 5 T J = 5 T J = V SD, SOURCE-DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current C rss 5 V DS, DRAIN-SOURCE VOLTAGE(V) Figure. Typical Junction Capacitance R DS(ON) Limited Qg (nc) Figure. Gate Charge DMCDSVQ Document number: DS9 Rev. - V DS = -V, I D = -5mA 7 of... P W =µs P W =ms P W =ms P W =ms P W =s P W =s T J(Max) = 5 T C = 5 Single Pulse DC DUT on *MRP Board V GS = -V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area November 7

8 r(t), TRANSIENT THERMAL RESISTANCE DMCDSVQ. D=.7 D=.5 D=. D=. D=.5 D=.9. D=. D=.. D=Single Pulse D=.5 E- E t, PULSE DURATION TIME (sec) Figure 5. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 5 /W Duty Cycle, D = t / t DMCDSVQ Document number: DS9 Rev. - of November 7

9 DMCDSVQ Package Outline Dimensions Please see for the latest version. SOT5 A K G D B C M SOT5 Dim Min Max Typ A.5.. B..5. C D G.9.. H.5.7. K.55.. L... M... All Dimensions in mm H L Suggested Pad Layout Please see for the latest version. SOT5 Z G Y C C C Value Dimensions (in mm) Z. G. X.75 Y.5 C.7 C.5 X DMCDSVQ Document number: DS9 Rev. - 9 of November 7

10 DMCDSVQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 7, Diodes Incorporated DMCDSVQ Document number: DS9 Rev. - of November 7

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits