BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE. Pb Free Packages are Available.
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1 BAS9LT, BAS0LT, BASLT, BASDWT Preferred Devices High Voltage Switching Diode Features PbFree Packages are Available MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol Value Unit BAS9 BAS0 BAS Repetitive Peak Reverse Voltage BAS9 BAS0 BAS V R V RRM Continuous Forward Current I F madc Peak Forward Surge Current I FM(surge) 6 madc Junction and Storage Temperature Range T J, T stg to +0 Power Dissipation (Note ) P D 8 mw Electrostatic Discharge ESD HM < 00 MM < 00 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Mounted on FR Board =.0 x 0.7 x 0.06 in. C V HIGH VOLTAGE SWITCHING DIODE CATHODE ANODE SC88A CATHODE CATHODE SOT (TO6) CASE 8 STYLE 8 SC88A (SOT) CASE 9A SOT ANODE ANODE MARKING DIAGRAMS Jx M Jx M x = P, R, or S P = BAS9LT R = BAS0LT S = BASLT or BASDWT M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 8
2 BAS9LT, BAS0LT, BASLT, BASDWT THERMAL CHARACTERISTICS (SOT) Characteristic Symbol Max Unit Total Device Dissipation FR Board (Note ) T A = C Derate above C P D.8 mw Thermal Resistance JunctiontoAmbient (SOT) R JA 6 C/W Total Device Dissipation Alumina Substrate (Note ) T A = C Derate above C P D 00. mw Thermal Resistance JunctiontoAmbient R JA 7 C/W Junction and Storage Temperature Range T J, T stg to +0 C THERMAL CHARACTERISTICS (SC88A) Characteristic Symbol Max Unit Power Dissipation (Note ) P D 8 mw Thermal Resistance JunctiontoAmbient Derate Above C R JA 8.0 Maximum Junction Temperature T Jmax 0 C Operating Junction and Storage Temperature Range T J, T stg to +0 C. FR = in.. Alumina = in. 99.% alumina.. Mounted on FR Board =.0 x 0.7 x 0.06 in. C/W ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current (V R = 00 ) BAS9 (V R = 0 ) BAS0 (V R = ) BAS (V R = 00, T J = 0 C) BAS9 (V R = 0, T J = 0 C) BAS0 (V R =, T J = 0 C) BAS I R Adc Reverse Breakdown Voltage (I BR = 00 Adc) BAS9 (I BR = 00 Adc) BAS0 (I BR = 00 Adc) BAS V (BR) Forward Voltage (I F = 00 madc) (I F = madc) Diode Capacitance (V R = 0, f =.0 MHz) C D.0 pf Reverse Recovery Time (I F = I R = 0 madc, I R(REC) =.0 madc, R L = 00) t rr 0 ns V F.0.
3 BAS9LT, BAS0LT, BASLT, BASDWT ORDERING INFORMATION Device Package Shipping BAS9LT SOT 000 / Tape & Reel BAS9LTG SOT (PbFree) 000 / Tape & Reel BAS9LT SOT 0000 / Tape & Reel BAS9LTG SOT (PbFree) 0000 / Tape & Reel BAS0LT SOT 000 / Tape & Reel BAS0LTG SOT (PbFree) 000 / Tape & Reel BASLT SOT 000 / Tape & Reel BASLTG SOT (PbFree) 000 / Tape & Reel BASLT SOT 0000 / Tape & Reel BASLTG SOT (PbFree) 0000 / Tape & Reel BASDWT SC88A 000 / Tape & Reel BASDWTG SC88A (PbFree) 000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D.
4 BAS9LT, BAS0LT, BASLT, BASDWT PACKAGE DIMENSIONS SOT (TO6) CASE 808 ISSUE AN A E A D e b HE SEE VIEW C L L VIEW C c 0. NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. 80 THRU 07 AND 09 OBSOLETE, NEW STANDARD 808. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L HE STYLE 8: PIN. ANODE. NO CONNECTION. CATHODE SOLDERING FOOTPRINT* SCALE 0: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
5 BAS9LT, BAS0LT, BASLT, BASDWT PACKAGE DIMENSIONS S A G B D PL 0. (0.008) M B M N SC88A, SOT, SC70 CASE 9A0 ISSUE J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. 9A0 OBSOLETE. NEW STANDARD 9A0.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G 0.06 BSC 0.6 BSC H J K N REF 0.0 REF S C J H K SOLDERING FOOTPRINT* SCALE 0: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
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A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
MC14584B. Hex Schmitt Trigger
MC4584B Hex Schmitt Trigger The MC4584B Hex Schmitt Trigger is constructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. These devices find primary use where
BAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
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NL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
NL37WZ07. Triple Buffer with Open Drain Outputs
Triple Buffer with Open Drain Outputs The N7WZ7 is a high performance triple buffer with open drain outputs operating from a.6 to. supply. The internal circuit is composed of multiple stages, including
NTB60N06, NVB60N06. Power MOSFET. 60 V, 60 A, N Channel D 2 PAK. 60 VOLTS, 60 AMPERES R DS(on) = 14 m
NTB6N6, NVB6N6 Power MOSFET 6 V, 6 A, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AECQ11
NTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
TLV431A, TLV431B, TLV431C, SCV431B, NCV431 Low Voltage Precision Adjustable Shunt Regulator
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MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter
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NCV8403, NCV8403A. Self-Protected Low Side Driver with Temperature and Current Limit. 42 V, 14 A, Single N Channel, SOT 223
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MC14060B. 14 Bit Binary Counter and Oscillator
4Bit Binary Counter and Oscillator The MC4060B is a 4stage binary ripple counter with an onchip oscillator buffer. The oscillator configuration allows design of either RC or crystal oscillator circuits.
AO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
FST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds
T95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
NL17SZ17. Single Non-Inverting Buffer with Schmitt Trigger
NL7SZ7 Single Non-Inverting Buffer with Schmitt Trigger The NL7SZ7 is a single Non inverting Schmitt Trigger Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in
A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver
Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver High Performance Silicon Gate CMOS The is identical in pinout to the LS244. The device inputs are compatible with standard CMOS outputs; with
NL27WZU04. Dual Unbuffered Inverter
Dual Unbuffered Inverter The N27WZU04 is a high performance dual unbuffered inverter operating from a.5 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many
MC14049B, MC14050B. Hex Buffer
MC404B, MC4050B Hex Buffer The MC404B Hex Inverter/Buffer and MC4050B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. These
MC74LV594A. 8-Bit Shift Register with Output Register
8-Bit Shift Register with Output Register The MC74LV594A is an 8 bit shift register designed for 2 V to 6.0 V V CC operation. The device contain an 8 bit serial in, parallel out shift register that feeds
The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram
ESD5451R 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451R is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to
MC74AC00, MC74ACT00. Quad 2 Input NAND Gate. High Performance Silicon Gate CMOS
Quad 2Input NAND Gate ighperformance SiliconGate CMOS Features Output Drive Capability: 24 ma Operating oltage Range: 2 to 6 AC00; to ACT00 ow Input Current:.0 A igh Noise Immunity Characteristic of CMOS
NCS1002A. Constant Voltage / Constant Current Secondary Side Controller
NCS00A Constant Voltage / Constant Current Secondary Side Controller Description The NCS00A is a performance upgrade from the NCS00 focused on reducing power consumption in applications that require more