NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
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1 NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized for V, V Gate rives These evices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power elivery C C Converters MAXIMUM RATINGS (T J = C unless otherwise stated) Parameter Symbol Value Unit rain to Source Voltage V SS V Gate to Source Voltage V GS ± V Continuous rain T A = C I. A Current R JA (Note ) T A = C 9.8 Power issipation R JA (Note ) Continuous rain Current R JA s (Note ) Power issipation R JA s (Note ) Continuous rain Current R JA (Note ) Power issipation R JA (Note ) Continuous rain Current R JC (Note ) Power issipation R JC (Note ) Pulsed rain Current Steady State T A = C P.7 W T A = C I. A T A = C.8 T A = C P. W T A = C I 9. A T A = C.7 T A = C P.9 W T C = C I A T C = C 8 T C = C P. W T A = C, t p = s I M 8 A Current Limited by Package T A = C I max A Operating Junction and Storage T J, to C Temperature T STG + Source Current (Body iode) I S A rain to Source V/T dv/d t. V/ns Single Pulse rain to Source Avalanche Energy (T J = C, V = V, V GS = V, I L = A pk, L =. mh, R G = ) Lead Temperature for Soldering Purposes (/8 from case for s) E AS mj T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using sq in pad, oz Cu.. Surface mounted on FR board using the minimum recommended pad size. SO 8 FLAT LEA CASE 88AA STYLE A Y W ZZ V (BR)SS R S(ON) MAX I MAX V G () 7. V. V N CHANNEL MOSFET = Assembly Location = Year = Work Week = Lot Traceability A MARKING IAGRAM 9N AYWZZ evice Package Shipping NTMFS9NTG NTMFS9NTG (,) ORERING INFORMATION SO 8 FL (Pb Free) SO 8 FL (Pb Free) S (,,) S S S G / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8/. Semiconductor Components Industries, LLC, May, Rev. Publication Order Number: NTMFS9N/
2 NTMFS9N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Case (rain) R JC.8 Junction to Ambient Steady State (Note ) R JA. Junction to Ambient Steady State (Note ) R JA. Junction to Ambient (t s) (Note ) R JA.. Surface mounted on FR board using sq in pad, oz Cu.. Surface mounted on FR board using the minimum recommended pad size. C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS rain to Source Breakdown Voltage V (BR)SS V GS = V, I = A V rain to Source Breakdown Voltage (transient) V (BR)SSt V GS = V, I (aval) = 8.8 A, T case = C, t transient = ns V rain to Source Breakdown Voltage Temperature Coefficient V (BR)SS / T J mv/ C Zero Gate Voltage rain Current I SS V GS = V, V S = V T J = C. T J = C Gate to Source Leakage Current I GSS V S = V, V GS = ± V ± na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V S, I = A... V Negative Threshold Temperature Coefficient V GS(TH) /T J.8 mv/ C rain to Source On Resistance R S(on) V GS = V I = A. 7. I = A. V GS =. V I = A 9.. I = A 8.7 Forward Transconductance g FS V S =. V, I = A S.7 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C ISS Output Capacitance C OSS V GS = V, f = MHz, V S = V 9 Reverse Transfer Capacitance C RSS 9 Capacitance C RSS / V GS = V, V S = V, f = MHz.9 C ISS Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH). Gate to Source Charge Q GS V GS =. V, V S = V; I = A. Gate to rain Charge Q G. Total Gate Charge Q G(TOT) V GS = V, V S = V; I = A 7. nc SWITCHING CHARACTERISTICS (Note ) Turn On elay Time t d(on) Rise Time t r V GS =. V, V S = V,.9 Turn Off elay Time t d(off) I = A, R G =..7 Fall Time t f.. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures A m pf nc ns
3 NTMFS9N ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note ) Turn On elay Time t d(on). Rise Time t r V GS = V, V S = V,.8 Turn Off elay Time t d(off) I = A, R G =. 8. ns Fall Time t f. RAIN SOURCE IOE CHARACTERISTICS Forward iode Voltage V S VGS = V, T J = C.87. I S = A T J = C.7 V Reverse Recovery Time t RR.9 Charge Time t a V GS = V, dis/dt = A/ s,. ns ischarge Time t b I S = A.9 Reverse Recovery Charge Q RR 8. nc PACKAGE PARASITIC VALUES Source Inductance L S. nh rain Inductance L. nh Gate Inductance L G T A = C.8 nh Gate Resistance R G... Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures.
4 NTMFS9N TYPICAL CHARACTERISTICS 9 V. V T J = C. V 9 T J = C I, RAIN CURRENT (A) 8 7. V. V V GS =.8 V I, RAIN CURRENT (A) 8 7 V S = V T J = C T J = C V S, RAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics R S(on), RAIN TO SOURCE RESISTANCE ( ) V GS (V) Figure. On Resistance vs. V GS 7 I = A 8 9 R S(on), RAIN TO SOURCE RESISTANCE ( ) T = C V GS =. V V GS = V I, RAIN CURRENT (A) Figure. On Resistance vs. rain Current and Gate Voltage R S(on), RAIN TO SOURCE RESISTANCE (NORMALIZE) I = A V GS = V 7 I SS, LEAKAGE (na),, T J = C T J = C T J = 8 C V GS = V T J, JUNCTION TEMPERATURE ( C) V S, RAIN TO SOURCE VOLTAGE (V) Figure. On Resistance Variation with Temperature Figure. rain to Source Leakage Current vs. Voltage
5 NTMFS9N TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 8 C iss C oss C rss T J = C V GS = V V GS, GATE TO SOURCE VOLTAGE (V) Qgs Qgd QT T J = C V GS = V V = V I = A 8 8 V S, RAIN TO SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nc) Figure 7. Capacitance Variation Figure 8. Gate to Source and rain to Source Voltage vs. Total Charge t, TIME (ns) V GS = V V = V I = A t d(off) t f t r t d(on) I S, SOURCE CURRENT (A) V GS = V T J = C T J = C R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance V S, SOURCE TO RAIN VOLTAGE (V) Figure. iode Forward Voltage vs. Current I, RAIN CURRENT (A) V S, RAIN TO SOURCE VOLTAGE (V) s s ms ms Figure. Maximum Rated Forward Biased Safe Operating Area E AS, SINGLE PULSE RAIN TO SOURCE AVALANCHE ENERGY (mj) V < V GS < V Single Pulse 8 T C = C. R S(on) Limit dc Thermal Limit Package Limit I = A T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Avalanche Energy vs. Starting Junction Temperature
6 NTMFS9N TYPICAL CHARACTERISTICS r(t) ( C/W). = SINGLE PULSE t, TIME (s) Figure. Thermal Response
7 NTMFS9N PACKAGE IMENSIONS FN x,.7p (SO 8FL) CASE 88AA ISSUE G. C. C 8X b. C A B. c L X TOP VIEW SIE VIEW e/. C A B X E E A ETAIL A. C c X e ETAIL A X A C SEATING PLANE NOTES:. IMENSIONING AN TOLERANCING PER ASME Y.M, 99.. CONTROLLING IMENSION: MILLIMETER.. IMENSION AN E O NOT INCLUE MOL FLASH PROTRUSIONS OR GATE BURRS. MILLIMETERS IM MIN NOM A.9. A. b.. c..8. BSC..9. E. BSC E..8 E. e.7 BSC G.. K.. L.. L..7 M.. STYLE : PIN. SOURCE. SOURCE SOLERING FOOTPRINT*. SOURCE. GATE X X. RAIN.7.7 X. MAX PIN (EXPOSE PA) E K L M.9. X.9. X.9..7 G BOTTOM VIEW X.. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box, enver, Colorado 87 USA Phone: 7 7 or 8 8 Toll Free USA/Canada Fax: 7 7 or 8 87 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTMFS9N/
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