Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break

Transcription

1 FQD3P50TM-F V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. Features -.1A, -500V, R DS(on) = = -10 V Low gate charge ( typical 18 nc) Low Crss ( typical 9.5 pf) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant D S! Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter FQD3P50TM-F085 Units S Drain-Source Voltage -500 V I D Drain Current - Continuous (T C = 5 C) -.1 A - Continuous (T C = 100 C) A I DM Drain Current - Pulsed (Note 1) -8.4 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note ) 50 mj I AR Avalanche Current (Note 1) -.1 A E AR Repetitive Avalanche Energy (Note 1) 5.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns P D Power Dissipation (T A = 5 C) *.5 W Power Dissipation (T C = 5 C) 50 W - Derate above 5 C 0.4 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics G D-PAK Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case --.5 C/W R θja Thermal Resistance, Junction-to-Ambient * C/W R θja Thermal Resistance, Junction-to-Ambient C/W * When mounted on the minimum pad size recommended (PCB Mount) S G!! D 010 Semiconductor Components Industries, LLC. September-017, Rev. 3 Publication Order Number: FQD3P50TM-F085/D

2 Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -50 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = -50 µa, Referenced to 5 C V/ C I DSS = -500 V, = 0 V µa Zero Gate Voltage Drain Current = -400 V, T C = 15 C µa I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = -50 µa V R DS(on) Static Drain-Source On-Resistance = -10 V, I D = A Ω g FS Forward Transconductance = -50 V, I D = A (Note 4) S Dynamic Characteristics C iss Input Capacitance = -5 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns = -50 V, I D = -.7 A, t r Turn-On Rise Time R G = 5 Ω ns t d(off) Turn-Off Delay Time ns t f Q g Turn-Off Fall Time Total Gate Charge (Note 4, 5) = -400 V, I D = -.7 A, ns nc Q gs Gate-Source Charge = -10 V nc Q gd Gate-Drain Charge (Note 4, 5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -.1 A V t rr Reverse Recovery Time = 0 V, I S = -.7 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L = 10mH, I AS = -.1A, = -50V, R G = 5 Ω, Starting T J = 5 C 3. I SD -.7A, di/dt 00A/µs, BS, Starting T J = 5 C 4. Pulse Test : Pulse width 300µs, Duty cycle % 5. Essentially independent of operating temperature

3 Typical Characteristics -I D, Drain Current [A] Top : V V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V , Drain-Source Voltage [V] 1. 50μs Pulse Test. T C = 5 Figure 1. On-Region Characteristics -I D, Drain Current [A] = -50V. 50μs Pulse Test , Gate-Source Voltage [V] Figure. Transfer Characteristics R DS(on) [Ω], Drain-Source On-Resistance = - 0V = - 10V Note : T J = I D, Drain Current [A] -I DR, Reverse Drain Current [A] = 0V. 50μs Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1 10 = -100V Capacitance [pf] C iss C oss C rss 1. = 0 V. f = 1 MHz -, Gate-Source Voltage [V] = -50V = -400V Note : I D = -.7 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3

4 Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage -I D, Drain Current [A] T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) 1. T C = 5 o C. T J = 150 o C 3. Single Pulse DC 10 ms -, Drain-Source Voltage [V] 1. = 0 V. I D = -50 μa Figure 7. Breakdown Voltage Variation vs. Temperature 1 ms 100 µs R DS(ON), (Normalized) Drain-Source On-Resistance -I D, Drain Current [A] T J, Junction Temperature [ o C] T C, Case Temperature [ ] 1. = -10 V. I D = A Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response D= N otes : Z θ JC (t) =.5 /W M ax.. D uty F actor, D =t 1 /t T JM - T C = P DM * Z θ JC (t) single pulse P DM t 1 t t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve 4

5 1V 00nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs DUT Resistive Switching Test Circuit & Waveforms Q g Q gd Charge R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI AS BS BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current V SD I RM di/dt I FM, Body Diode Forward Current Body Diode Forward Voltage Drop Body Diode Recovery dv/dt 6

7 Mechanical Dimensions TO-5 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram):

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