D D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V
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1 FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM 5 V, A, 3.5 mω Features ual Cool TM Top ide Cooling PQFN package Max r (on) = 3.5 mω at V G = V, I =.5 A Max r (on) =.7 mω at V G =.5 V, I = 8 A High performance technology for extremely low r (on) yncfet chottky Body iode RoH Compliant Pin Top ual Cool TM 33 Bottom MOFET Maximum Ratings T A = 5 C unless otherwise noted G General escription This N-Channel MOFET is produced using ON emiconductor s advanced PowerTrench process. Advancements in both silicon and ual Cool TM package technologies have been combined to offer the lowest r (on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic chottky body diode. Applications ynchronous Rectifier for C/C Converters Telecom econdary ide Rectification High End erver/workstation Vcore Low ide G 8 FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM ymbol Parameter Ratings Units V rain to ource Voltage 5 V V G Gate to ource Voltage (Note ) ± V I Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C Package Marking and Ordering Information emiconductor Components Industries, LLC. October-7, Rev. -Continuous (ilicon limited) T C = 5 C -Continuous T A = 5 C (Note a) -Pulsed E A ingle Pulse Avalanche Energy (Note 3) 8 mj dv/dt Peak iode Recovery dv/dt (Note 5). V/ns Power issipation T C = 5 C P Power issipation T A = 5 C (Note a) 3. T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case (Top ource) 5.8 R θjc Thermal Resistance, Junction to Case (Bottom rain). R θja Thermal Resistance, Junction to Ambient (Note a) R θja Thermal Resistance, Junction to Ambient (Note b) 5 R θja Thermal Resistance, Junction to Ambient (Note i) 7 R θja Thermal Resistance, Junction to Ambient (Note j) R θja Thermal Resistance, Junction to Ambient (Note k) evice Marking evice Package Reel ize Tape Width Quantity 5 FMC5C ual Cool TM 33 3 mm 3 units A W C/W Publication Order Number: FMC5C/
2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = ma, V G = V 5 V ΔBV Breakdown Voltage Temperature I ΔT J Coefficient = ma, referenced to 5 C mv/ C I Zero Gate Voltage rain Current V = V, V G = V 5 μa I G Gate to ource Leakage Current, Forward V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = ma V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient I = ma, referenced to 5 C -5 mv/ C V G = V, I =.5 A r (on) tatic rain to ource On Resistance V G =.5 V, I = 8 A 3..7 mω V G = V, I =.5 A, T J = 5 C g F Forward Transconductance V = 5 V, I =.5 A ynamic Characteristics C iss Input Capacitance 3 75 pf V = 3 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 3 5 pf R g Gate Resistance.. Ω witching Characteristics t d(on) Turn-On elay Time ns t r Rise Time V = 3 V, I =.5 A, 3. ns t d(off) Turn-Off elay Time V G = V, R GEN = Ω ns t f Fall Time 3 ns Q g Total Gate Charge V G = V to V 3 nc Q g Total Gate Charge V G = V to.5 V V = 3 V, nc Q gs Gate to ource Gate Charge I =.5 A.5 nc Q gd Gate to rain Miller Charge 3.9 nc FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM rain-ource iode Characteristics V G = V, I =.5 A (Note ).79. V ource to rain iode Forward Voltage V V G = V, I = A (Note ).7.8 t rr Reverse Recovery Time 39 ns I F =.5 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 9 3 nc
3 Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Top ource) 5.8 R θjc Thermal Resistance, Junction to Case (Bottom rain). R θja Thermal Resistance, Junction to Ambient (Note a) R θja Thermal Resistance, Junction to Ambient (Note b) 5 R θja Thermal Resistance, Junction to Ambient (Note c) 9 R θja Thermal Resistance, Junction to Ambient (Note d) R θja Thermal Resistance, Junction to Ambient (Note e) 9 R θja Thermal Resistance, Junction to Ambient (Note f) 3 R θja Thermal Resistance, Junction to Ambient (Note g) 3 R θja Thermal Resistance, Junction to Ambient (Note h) 79 R θja Thermal Resistance, Junction to Ambient (Note i) 7 R θja Thermal Resistance, Junction to Ambient (Note j) R θja Thermal Resistance, Junction to Ambient (Note k) R θja Thermal Resistance, Junction to Ambient (Note l) NOTE:. R θja is determined with the device mounted on a FR- board using a specified pad of oz copper as shown below. R θjc is guaranteed by design while R θca is determined by the user's board design. a. C/W when mounted on a in pad of oz copper c. till air,.9x.x.7mm Aluminum Heat ink, in pad of oz copper d. till air,.9x.x.7mm Aluminum Heat ink, minimum pad of oz copper e. till air, 5.x.x.7mm Aavid Thermalloy Part # -LB- Heat ink, in pad of oz copper f. till air, 5.x.x.7mm Aavid Thermalloy Part # -LB- Heat ink, minimum pad of oz copper g. FPM Airflow, No Heat ink, in pad of oz copper h. FPM Airflow, No Heat ink, minimum pad of oz copper i. FPM Airflow,.9x.x.7mm Aluminum Heat ink, in pad of oz copper j. FPM Airflow,.9x.x.7mm Aluminum Heat ink, minimum pad of oz copper k. FPM Airflow, 5.x.x.7mm Aavid Thermalloy Part # -LB- Heat ink, in pad of oz copper l. FPM Airflow, 5.x.x.7mm Aavid Thermalloy Part # -LB- Heat ink, minimum pad of oz copper b. 5 C/W when mounted on a minimum pad of oz copper C/W FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM. Pulse Test: Pulse Width < 3 μs, uty cycle <.%. 3. E A of 8 mj is based on starting T J = 5 C, L = mh, I A = 3 A, V = 3 V, V G = V. % test at L =.3 mh, I A = A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. I.5 A, di/dt A/μs, V BV, tarting T J = 5 o C. 3
4 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. I =.5 A V G = V V G = V V G =.5 V V G = 3.5 V V G = 3 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G =.5 V NORMALIZE RAIN TO OURCE ON-REITANCE V G = V 3 9 I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature r(on), RAIN TO OURCE ON-REITANCE (mω) V G =.5 V Figure. V G = 3 V I =.5 A PULE URATION = 8 μs UTY CYCLE =.5% MAX V G = 3.5 V T J = 5 o C T J = 5 o C V G =.5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX 8 V G, GATE TO OURCE VOLTAGE (V) On-Resistance vs Gate to ource Voltage FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM I, RAIN CURRENT (A) 9 3 PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A).. V G = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure. ource to rain iode Forward Voltage vs ource Current
5 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) 8 I =.5 A Figure 7. V = V V = 3 V Q g, GATE CHARGE (nc) V = V f = MHz V G = V. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive witching Capability CAPACITANCE (pf) I, RAIN CURRENT (A) 3 8 V G =.5 V Limited by Package V G = V C iss C oss C rss R θjc =. o C/W T C, CAE TEMPERATURE ( o C) Figure. Maximum Continuous rain Current vs Case Temperature 3 FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM I, RAIN CURRENT (A) 3. THI AREA I LIMITE BY r (on) INGLE PULE T J = MAX RATE R θja = 5 o C/W T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area us ms ms ms s s C P (PK), PEAK TRANIENT POWER (W) INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. ingle Pulse Maximum Power issipation 5
6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja... UTY CYCLE-ECENING ORER = INGLE PULE R θja = 5 o C/W t, RECTANGULAR PULE URATION (sec) Figure 3. Junction-to-Ambient Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM
7 Typical Characteristics (continued) yncfet chottky body diode Characteristics ON emiconductor s yncfet process embeds a chottky diode in parallel with PowerTrench MOFET. This diode exhibits similar characteristics to a discrete external chottky diode in parallel with a MOFET. Figure 3 shows the reverse recovery characteristic of the FMC5C. CURRENT (A) di/dt = 3 A/μs TIME (ns) Figure 3. FMC5C yncfet body diode reverse recovery characteristic chottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I, REVERE LEAKAGE CURRENT (A) T J = 5 o C T J = o C T J = 5 o C V, REVERE VOLTAGE (V) Figure. yncfet body diode reverse leakage versus drain-source voltage FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM 7
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