34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel

Size: px

Start display at page:

Download "34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel"

Ilene Robbins
6 years ago
Views:

V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.

1 V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max V G = V V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is designed to minimize R (ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.. Backlighting Power Management Functions C-C Converters Features and Benefits % Unclamped Inductive witch (UI) Test in Production High Conversion Efficiency Low R (ON) Minimizes On tate Losses Low Input Capacitance Fast witching peed Totally Lead-Free & Fully RoH Compliant (Notes & 2) Halogen and Antimony Free. Green evice (Note 3) Mechanical ata Case: V-FN (Type B) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture ensitivity: Level per J-T-2 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. olderable per MIL-T-22, Method 28 Weight:.27 grams (Approximate) Pin G Top View Bottom View Top View Internal chematic G Equivalent circuit Ordering Information (Note 4) Part Number Case Packaging -7 V-FN (Type B) 2,/Tape & Reel -3 V-FN (Type B) 3,/Tape & Reel Notes:. No purposely added lead. Fully EU irective 22/95/EC (RoH) & 2/65/EU (RoH 2) compliant. 2. ee for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information T = Product Type Marking Code YYWW = ate Code Marking YY = Year (ex: 6 = 26) WW = Week ( to 53) of 7

2 Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic ymbol Value Unit rain-ource Voltage V V Gate-ource Voltage V G ±2 V Continuous rain Current, V G = V (Note 6) Continuous rain Current, V G = V teady tate teady tate T A = +25 C T A = +7 C T C = +25 C T C = + C Maximum Continuous Body iode Forward Current (Note 6) I.6 A Pulsed rain Current ( s Pulse, uty Cycle = %) I M 54 A Avalanche Current, L = 3mH (Note 8) I A 7.5 A Avalanche Energy, L = 3mH (Note 8) E A 85 mj I I A A Thermal Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic ymbol Value Unit Total Power issipation (Note 5) P W Thermal Resistance, Junction to Ambient (Note 5) R JA 8 C/W Total Power issipation (Note 6) P 2. W Thermal Resistance, Junction to Ambient (Note 6) R JA 59 C/W Thermal Resistance, Junction to Case R JC 4.5 C/W Operating and torage Temperature Range T J, T TG -55 to +5 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic ymbol Min Typ Max Unit Test Condition OFF CHARACTERITIC (Note 7) rain-ource Breakdown Voltage BV V V G = V, I = ma Zero Gate Voltage rain Current I µa V = 8V, V G = V Gate-ource Leakage I G ± na V G = 2V, V = V ON CHARACTERITIC (Note 7) Gate Threshold Voltage V G(TH) V V = V G, I = 25µA 2. 5 V G = V, I = 2A mω tatic rain-ource On-Resistance R (ON) V G = 6V, I = 2A mω V G = 4.5V, I = 5A iode Forward Voltage V.9.3 V V G = V, I = 2A YNAMIC CHARACTERITIC (Note 8) Input Capacitance C iss 87 V pf = 5V, V G = V Output Capacitance C oss 26 f = MHz Reverse Transfer Capacitance C rss 6.9 Gate Resistance R g.75 Ω V = V, V G = V, f = MHz Total Gate Charge Q g 33.3 V nc = 5V, I = A, Gate-ource Charge Q gs 6.9 V G = V Gate-rain Charge Q gd 5. Turn-On elay Time t (ON) 6.5 Turn-On Rise Time t R 7 Turn-Off elay Time t (OFF) 9.7 ns Turn-Off Fall Time t F 8. Reverse Recovery Time t RR 37.9 ns Reverse Recovery Charge Q RR 5.9 nc V = 5V, V G = V, I = A, R g = 6Ω I F = A, di/dt = A/µs Notes: 5. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. evice mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. 7. hort duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7

3 R (ON), RAIN-OURCE ON-REITANCE (Ω) R (ON), RAIN-OURCE ON-REITANCE (NORMALIZE) R (ON), RAIN-OURCE ON-REITANCE (Ω) R (ON), RAIN-OURCE ON-REITANCE (Ω) I, RAIN CURRENT (A) I, RAIN CURRENT (A) V G =.V V G = 6.V 25 V = 5V 2. V G = 4.5V V G = 4.V V G = 3.5V V, RAIN-OURCE VOLTAGE (V) Figure. Typical Output Characteristic V G, GATE-OURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic V G = 4.5V.4 I = 5A.3 I = 2A 5 V G = 6V.2 V G = V I, RAIN-OURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage V G, GATE-OURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.3.25 V G = V V G = 6V, I = 2A V G = V, I = 2A V G = 4.5V, I = 5A I, RAIN CURRENT (A) Figure 5. Typical On-Resistance vs. rain Current and Junction Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature 3 of 7

4 V G (V) I, RAIN CURRENT (A) I, OURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R (ON), RAIN-OURCE ON-REITANCE (Ω) V G(TH), GATE THREHOL VOLTAGE (V) V G = 6V, I = 2A V G = 4.5V, I = 5A V G = V, I = 2A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature I = 25μA I = ma T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature 3 25 V G = V f=mhz C iss 2 5 C oss T J = 25 o C T J = 85 o C T J = 25 o C 5 T J = 5 o C T J = -55 o C C rss V, OURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current V, RAIN-OURCE VOLTAGE (V) Figure. Typical Junction Capacitance R (ON) Limited P W =µs Q g (nc) Figure. Gate Charge V = 5V, I = A 4 of 7.. P W =ms P W =ms P W =ms P W =s T J(Max) = 5 T C = 25 ingle Pulse UT on *MRP Board V G = V P W =s C. V, RAIN-OURCE VOLTAGE (V) Figure 2. OA, afe Operation Area

5 r(t), TRANIENT THERMAL REITANCE =.5 =.3 =.9. =. =.5 =.7 =.2 =. =.5 =ingle Pulse E-5... t, PULE URATION TIME (sec) Figure 3. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 2 /W uty Cycle, = t / t2 5 of 7

6 Package Outline imensions Please see for the latest version. V-FN (Type B) A3 A E A E2 2 e b L L eating Plane V-FN (Type B) im Min Max Typ A A..5.2 A b E E e k L L z All imensions in mm z k uggested Pad Layout Please see for the latest version. X V-FN (Type B) Y3 G Y Y Y2 imensions Value (in mm) C.65 C.95 G.65 X.42 X 2.37 Y.7 Y.4 Y2 2.5 Y3.45 C X C 6 of 7

7 IMPORTANT NOTICE IOE INCORPORATE MAKE NO WARRANTY OF ANY KIN, EXPRE OR IMPLIE, WITH REGAR TO THI OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIE OF MERCHANTABILITY AN FITNE FOR A PARTICULAR PURPOE (AN THEIR EQUIVALENT UNER THE LAW OF ANY JURIICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United tates, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United tates, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE UPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 26, iodes Incorporated 7 of 7

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching