N-Channel 30-V (D-S) MOSFET with Schottky Diode

Transcription

1 New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I V G = V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A) A 3.8 O-8 FEATURE TrenchFET Power MOFET Fast witching peed Low Gate Charge APPLICATION C-C Logic Level Low Voltage and Battery Powered Applications 8 G Ordering Information: i48by i48by-t (with Tape and Reel) G N-Channel MOFET chottky iode Top View ABOLUTE MAXIMUM RATING (T A = 5 C UNLE OTHERWIE NOTE) Parameter ymbol sec teady tate Unit rain-ource Voltage (MOFET) V Reverse Voltage (chottky) V Gate-ource Voltage (MOFET) V G Continuous rain Current (T J = 5 C) (MOFET) a T A = 5 C T A = 7 C I Pulsed rain Current (MOFET) I M 5 Continuous ource Current (MOFET iode Conduction) a I.3.5 Average Foward Current (chottky) I F Pulsed Foward Current (chottky) I FM 4 Maximum Power issipation (MOFET) a T A = 7 C.6.88 T A = 5 C.5.38 T A = 5 C P..3 Maximum Power issipation (chottky) a T A = 7 C.3.84 A W Operating Junction and torage Temperature Range T J, T stg -55 to 5 C THERMAL REITANCE RATING Parameter evice ymbol Typical Maximum Unit MOFET Maximum Junction-to-Ambient to (t sec) a chottky 44 6 MOFET 36 5 R thja 73 9 Maximum Junction-to-Ambient t t (t = steady state) t chottky C/W MOFET Maximum Junction-to-Foot t t (t = steady state) t a chottky 7 R thjf 4 Notes a. urface Mounted on FR4 Board. For PICE model information via the Worldwide Web: Rev. A, 6-May-3

2 i48by New Product MOFET + CHOTTKY PECIFICATION (T J = 5 C UNLE OTHERWIE NOTE) Parameter ymbol Test Condition Min Typ Max Unit tatic Gate Threshold Voltage V G(th) V = V G, I = 5 A 3 V Gate-Body Leakage I G V = V, V G = V na V = 4 V, V G = V.7. Zero Gate Voltage rain Current (MOFET + chottky) I V = 4 V, V G = V, T J = C.5 ma V = 4 V, V G = V, T J = 5 C 6.5 On-tate rain Current a I (on) V 5 V, V G = V A V G = V, I = A.5.35 rain-ource On-tate Resistance a r (on) V G = 4.5 V, I = 5 A.6. Forward Transconductance a g fs V = 5 V, I = A 5 chottky iode Forward Voltage a V I = 3. A, V G = V, T J = 5 C.4.47 I = 3. A, V G = V V ynamic b Total Gate Charge Q g 4.5 Gate-ource Charge Q gs V = 5 V, V G = 5 V, I = A 6.3 nc Gate-rain Charge Q gd 4.7 Gate Resistnce R G.55 Turn-On elay Time t d(on) 7 Rise Time t r V = 5 V, R L = 5 3 Turn-Off elay Time t d(off) I A, V GEN = V, R G = ns Fall Time t f 5 5 ource-rain Reverse Recovery Time t rr I F = 3. A, di/dt = A/ s 36 7 Notes a. Pulse test; pulse width s, duty cycle %. b. Guaranteed by design, not subject to production testing. -63 Rev. A, 6-May-3

3 New Product i48by TYPICAL CHARACTERITIC (5 C UNLE NOTE) Output Characteristics Transfer Characteristics V G = thru 5 V 4 - rain Current (A) 4 V - rain Current (A) T C = 5 C I I 5 C 3 V -55 C V - rain-to-ource Voltage (V) V G - Gate-to-ource Voltage (V) On-Resistance vs. rain Current Capacitance.4 5 r (on) - On-Resistance ( ) V G = 4.5 V V G = V C - Capacitance (pf) 5 C iss (MOFET) C oss (MOFET + chottky).8 5 C rss (MOFET). 4 5 I - rain Current (A) V - rain-to-ource Voltage (V) Gate Charge On-Resistance vs. Junction Temperature Gate-to-ource Voltage (V) V G V = 5 V I = A r (on) - On-Resistance ( ) (Normalized) V G = V I = A Q g - Total Gate Charge (nc) T J - Junction Temperature ( C) -63 Rev. A, 6-May-3 3

4 i48by New Product TYPICAL CHARACTERITIC (5 C UNLE NOTE) ource-rain iode Forward Voltage On-Resistance vs. Gate-to-ource Voltage ource Current (A) I T J = 5 C T J = 5 C r (on) - On-Resistance ( ).4.3. I = 9. A V - ource-to-rain Voltage (V) V G - Gate-to-ource Voltage (V) Reverse Current (chottky) ingle Pulse Power Reverse Curent (ma).. V V Power (W) I R. V T J - Temperature ( C) Time (sec) afe Operating Area, Junction-to-Case Limited by r (on) - rain Current (A) I. T C = 5 C ingle Pulse ms ms ms s s dc.. V - rain-to-ource Voltage (V) 4-63 Rev. A, 6-May-3

5 New Product i48by TYPICAL CHARACTERITIC (5 C UNLE NOTE) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja = 7 C/W 3. T JM - T A = P M Z (t) thja ingle Pulse 4. urface Mounted quare Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance. uty Cycle = ingle Pulse quare Wave Pulse uration (sec) -63 Rev. A, 6-May-3 5

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