AO V Dual N-Channel MOSFET

Transcription

1 3V Dual N-Channel MOFET RFET TM General Description RFET TM The AO9 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON) and low gate charge. This device is suitable for use as a low and high side switch in MP and general purpose applications. Product ummary V D (V) = 3V I D =.A (V G = V) R D(ON) < mω (V G = V) R D(ON) < mω (V G =.V) % UI Tested % Rg Tested OIC- Top View Bottom View D D Top View D/ G G D D D/ D/ G G Pin Absolute Maximum Ratings T A = C unless otherwise noted Parameter ymbol Maximum Units Drain-ource Voltage 3 V V D V G Gate-ource Voltage ± V Continuous Drain Current AF T A = C. T A =7 C I D.9 Pulsed Drain Current B Power Dissipation I DM Avalanche Current B A I AR E AR Repetitive avalanche energy L=.3mH B 3 mj T A = C P D T A =7 C.3 Junction and torage Temperature Range T J, T TG - to C Thermal Characteristics Parameter ymbol Typ Max Units Maximum Junction-to-Ambient AF t s. C/W R θja Maximum Junction-to-Ambient A teady-tate 7 9 C/W Maximum Junction-to-Lead C teady-tate R θjl 3 C/W A W

2 Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV D Drain-ource Breakdown Voltage I D =ua, V G =V 3 V V D =3V, V G =V.. I D Zero Gate Voltage Drain Current ma T J = C I G Gate-Body leakage current V D =V, V G = ±V. µa V G(th) Gate Threshold Voltage V D =V G I D =µa... V I D(ON) On state drain current V G =.V, V D =V A R D(ON) tatic Drain-ource On-Resistance V G =V, I D =.A V G =.V, I D =7A 3 T J = C mω g F Forward Transconductance V D =V, I D =.A V D Diode Forward Voltage I =A,V G =V.. V I Maximum Body-Diode + chottky Continuous Current. A DYNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V D =V, f=mhz pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V G =V, V D =V, f=mhz. 3. Ω WITCHING PARAMETER Q g (V) Total Gate Charge 3 Q g (.V) Total Gate Charge. nc V G =V, V D =V, I D =.A Q gs Gate ource Charge 3.9 nc Q gd Gate Drain Charge. nc t D(on) Turn-On DelayTime. ns t r Turn-On Rise Time V G =V, V D =V, R L =.7Ω,.7 ns t D(off) Turn-Off DelayTime R GEN =3Ω. ns t f Turn-Off Fall Time. ns t rr Body Diode Reverse Recovery Time I F =.A, di/dt=3a/µs ns Q rr Body Diode Reverse Recovery Charge I F =.A, di/dt=3a/µs. nc A:The value of R θja is measured with the device mounted on in FR- board with OZ. Copper, in a still air environment with T A = C. The value in any given application depends o n the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D: The static characteristics in Figures to are obtained using <3 us pulses, duty cycle.% max. E: These tests are performed with the device mounted on in FR- board with oz. Copper, in a still air environment with T A = C. The OA curve provides a single pulse rating. F: The current rating is based on the t<=s junction to ambient thermal resistance rating. Rev: Nov. mω THI PRODUCT HA BEEN DEIGNED AND QUALIFIED FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT DEVICE OR YTEM ARE NOT AUTHORIZED. AO DOE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PRODUCT. AO REERVE THE RIGHT TO IMPROVE PRODUCT DEIGN, FUNCTION AND RELIABILITY WITHOUT NOTICE.

3 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC 3 V V V D =V.V V 3.V V G =3V C 3 V D (Volts) DYNAMIC PARAMETER Figure : On-Region Characteristics V G (Volts) Figure : Transfer Characteristics R D(ON) (mω) 7 V G =.V V G =V Normalized On-Resistance.... I D =.A V G =V V G =.V I D =7A 3 Figure 3: On-Resistance vs. Drain Current and Gate Voltage. 3 9 Figure : On-Resistance vs. Junction Temperature.E+ I D =.A.E+ C R D(ON) (mω) 3 3 C C V G (Volts) Figure : On-Resistance vs. Gate-ource Voltage I (A).E+.E-.E-.E-3.E-.E- C VD (Volts) Figure : Body-Diode Characteristics

4 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC V G (Volts) V D =V I D =.A Capacitance (pf) C rss C oss C iss Q g (nc) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETER 3 V D (Volts) Figure : Capacitance Characteristics. I D (Amps)..... R D(ON) limited T J(Max) = C T C = C DC.. V D (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note E) µs µs m ms.s s s Power (W) 3 T J(Max) = C T C = C.... Pulse Width (s) Figure : ingle Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance... In descending order D=.,.3,.,.,.,., single pulse ingle Pulse D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =. C/W..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) P D T on T

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC I R (A).E-.E-.E-3.E-.E-.E- VD=V VD=V DYNAMIC PARAMETER Figure : Diode Reverse Leakage Current vs. Junction Temperature V D (V) A A I =A A Figure 3: Diode Forward voltage vs. Junction Temperature 3 3 di/dt=a/us di/dt=a/us ºC ºC. Q rr (nc) Qrr Irm 3 Is (A) Figure : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current ºC trr ºC ºC ºC Irm (A) trr (ns) ºC ºC 3 Is (A) Figure : Diode Reverse Recovery Time and oft Coefficient vs. Conduction Current... Q rr (nc) Is=A ºC ºC º Irm (A) trr (ns) 9 ºC ºC ºC Is=A trr. Qrr Irm ºC di/dt (A) Figure : Diode Reverse Recovery Charge and Peak Current vs. di/dt 3 ºC di/dt (A) Figure 7: Diode Reverse Recovery Time and oft Coefficient vs. di/dt.