AOP605 Complementary Enhancement Mode Field Effect Transistor

Size: px
Start display at page:

Download "AOP605 Complementary Enhancement Mode Field Effect Transistor"

Transcription

1 AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable for a multitude of applications. AOP65 and AOP65L are electrically identical. RoHS Compliant AOP65L is Halogen Free Features nchannel pchannel V DS (V) = 3V 3V I D = 7.5A (V GS = V) 6.6A (V GS = V) < 28mΩ (V GS = V) < 35mΩ (V GS = V) < 43mΩ (V GS = 4.5V) < 58mΩ (V GS = 4.5V) Top View PDIP8 Bottom View D2 D S2 G2 S G PDIP8 D2 D2 D D G2 nchannel S2 G S pchannel Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Max nchannel Max pchannel Units DrainSource Voltage 3 3 V GateSource Voltage Continuous Drain T A = C Current A T A =7 C Pulsed Drain Current B Power Dissipation T A = C T A =7 C V DS V GS I D I DM P D Junction and Storage Temperature Range T J, T STG 55 to 5 55 to 5 C Thermal Characteristics: nchannel Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 4 5 C/W Maximum JunctiontoAmbient A R θja SteadyState 67 8 C/W Maximum JunctiontoLead C SteadyState R θjl 33 4 C/W Thermal Characteristics: pchannel Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 38 5 C/W R θja Maximum JunctiontoAmbient A SteadyState 66 8 C/W Maximum JunctiontoLead C SteadyState R θjl 3 4 C/W ± ± V A W Alpha & Omega Semiconductor, Ltd.

2 AOP65 nchannel MOSFET Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 3 V I DSS T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±2V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.8 3 V I D(ON) On state drain current V GS =V, V DS =5V 3 A Zero Gate Voltage Drain Current Static DrainSource OnResistance V DS =24V, V GS =V V GS =V, I D =7.5A V GS =4.5V, I D =6.A T J = mω g FS Forward Transconductance V DS =5V, I D =7.5A 2 6 S V SD Body Diode Forward Voltage I S =A, V GS =V.76 V I S Maximum BodyDiodeContinuous Current 4 A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance. V GS =V, V DS =5V, f=mhz 2 pf C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =V, V DS =V, f=mhz.2 2 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge nc Q g Total Gate Charge nc V GS =4.5V, V DS =5V, I D =7.5A Q gs Gate Source Charge.82 nc Q gd Gate Drain Charge 3.2 nc t D(on) TurnOn DelayTime 4.6 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =2.Ω, 4. ns t D(off) TurnOff DelayTime R GEN =6Ω 2.6 ns t f TurnOff Fall Time 5.2 ns t rr Body Diode Reverse Recovery time I F =7.5A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery charge I F =7.5A, di/dt=a/µs 7.8 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The value in any given application depends on the user's specific board design. The current rating is based on the t B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using 8 µs pulses, duty cycle.5% max. s thermal resistance rating. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The SOA curve provides a single pulse rating. Rev 4 : Jan 29 µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

3 AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL I D (A) V 6V 5V 4.5V 3.5V V GS =3V V V DS (Volts) Fig : OnRegion Characteristics I D (A) V DS =5V C V GS (Volts) Figure 2: Transfer Characteristics (mω) V GS =4.5V V GS =V I D (Amps) Figure 3: OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance I D =7.5A V GS =V V GS =4.5V Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 7.E (mω) I D =7.5A V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage I S Amps.E.E.E2.E3 C C.E4.E V SD (Volts) Figure 6: Body diode characteristics

4 AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: NCHANNEL V GS (Volts) V DS =5V I D =7.5A Q g (nc) Figure 7: GateCharge characteristics Capacitance (pf) C rss C iss C oss f=mhz V GS =V V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps). limited ms ms.s µs. V DS (Volts) s s DC T J(Max) =5 C T A = C µs Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power W T J(Max) =5 C T A = C... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T

5 AOP65 Gate Charge Test Circuit & Waveform Qg DUT V Qgs Qgd Ig Charge R L R esistive Sw itching Test C ircuit & W aveform s R g D U T V DC V dd 9% % V gs td(on) t r t d(off) t f t on t off Diode Recovery Test Circuit & W aveform s DUT Q = Idt rr Ig Isd L VD C Vdd Isd I F di/dt I RM t rr Vdd

6 AOP65 pchannel MOSFET Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 3 V I DSS V DS =24V, V GS =V Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa V I D(ON) On state drain current V GS =V, V DS =5V 3 A V GS =V, I D =6.6A mω Static DrainSource OnResistance T J = V GS =4.5V, I D =5A mω g FS Forward Transconductance V DS =5V, I D =6.6A 3 S V SD Diode Forward Voltage I S =A,V GS =V.76 V I S Maximum BodyDiode Continuous Current 4.2 A DYNAMIC PARAMETERS C iss Input Capacitance 92 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 9 pf C rss Reverse Transfer Capacitance 22 pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) nc Q g (4.5V) Total Gate Charge (4.5V) nc V GS =V, V DS =5V, I D =6.6A Q gs Gate Source Charge 2.7 nc Q gd Gate Drain Charge 4.5 nc t D(on) TurnOn DelayTime 7.7 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =2.3Ω, 5.7 ns t D(off) TurnOff DelayTime R GEN =3Ω 2.2 ns t f TurnOff Fall Time 9.5 ns t rr Body Diode Reverse Recovery Time I F =6.6A, di/dt=a/µs 2 24 ns Q rr Body Diode Reverse Recovery Charge I F =6.6A, di/dt=a/µs 8.8 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A = C. The value in any a given application depends on on the the user's specific board design. The current rating is is based on on the the t t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A= C. The SOA curve provides a single pulse rating. Rev 4 : Jan 29 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

7 AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 3 V 6V 5V 4.5V 3 V DS =5V 2 4V 2 I D (A) 5 3.5V I D (A) 5 5 V GS =3V V DS (Volts) Fig : OnRegion Characteristics 5 C V GS (Volts) Figure 2: Transfer Characteristics (mω) (mω) V GS =4.5V I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage C V GS =V I D =6.6A V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage Normalized OnResistance I S (A) E.E.E.E2.E3.E4.E5.E6 I D =6.6A Temperature ( C) Figure 4: OnResistance vs. Junction Temperature V GS =V C V GS =4.5V V SD (Volts) Figure 6: BodyDiode Characteristics

8 AOP65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: PCHANNEL 8 V DS =5V I D =6.6A 5 C iss V GS (Volts) Capacitance (pf) 75 5 C oss C rss Q g (nc) Figure 7: GateCharge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)... T J(Max) =5 C, T A = C limited s.s s µs µs ms ms DC Power (W) T J(Max) =5 C T A = C.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T

9 AOP65 Gate Charge Test Circuit & Waveform Qg DUT V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & W aveforms ton toff td(on) t r td(off) t f Rg DUT Vdd 9% % D iod e R ecove ry T est C ircu it & W ave form s V ds D U T V gs Q = Idt rr V ds Ig V gs Isd L V D C V dd Isd V ds I F di/dt I R M t rr V dd

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery

More information

AO V Dual N-Channel MOSFET

AO V Dual N-Channel MOSFET AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable

More information

AOD466 N-Channel Enhancement Mode Field Effect Transistor

AOD466 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for

More information

AOD4184A 40V N-Channel MOSFET

AOD4184A 40V N-Channel MOSFET 4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide

More information

V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D

V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized

More information

AON V N-Channel MOSFET

AON V N-Channel MOSFET AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D

More information

AON V Common-Drain Dual N-Channel MOSFET

AON V Common-Drain Dual N-Channel MOSFET 2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree

More information

AONR V P-Channel MOSFET

AONR V P-Channel MOSFET 3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1 AON74B 3V NChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V AON7 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at 4.V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 3V NChannel MOSFET General Description Trench Power MOSFET technology Very Low R DS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

AON V N-Channel SRFET

AON V N-Channel SRFET AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View AON78 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1 AON7556 3V NChannel AlphaMOS General Description Trench Power AlphaMOS (αmos LV) technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

AON6266E 60V N-Channel AlphaSGT TM

AON6266E 60V N-Channel AlphaSGT TM 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant

More information

AON4605 Complementary Enhancement Mode Field Effect Transistor

AON4605 Complementary Enhancement Mode Field Effect Transistor AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

AON V Channel AlphaSGT TM

AON V Channel AlphaSGT TM AON6 V Channel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Driven RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R

More information

AO4620 Complementary Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

AO V Dual P + N-Channel MOSFET

AO V Dual P + N-Channel MOSFET 4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters

More information

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant

More information

AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver

AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol 3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

AO7401 P-Channel Enhancement Mode Field Effect Transistor

AO7401 P-Channel Enhancement Mode Field Effect Transistor Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,

More information

AO3411 P-Channel Enhancement Mode Field Effect Transistor

AO3411 P-Channel Enhancement Mode Field Effect Transistor January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View AON77 V NChannel MOFET RFET TM General Description RFET TM AON77 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device

More information

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device

More information

AOT404 N-Channel Enhancement Mode Field Effect Transistor

AOT404 N-Channel Enhancement Mode Field Effect Transistor AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G

More information

AOD444/AOI444 60V N-Channel MOSFET

AOD444/AOI444 60V N-Channel MOSFET AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,

More information

AO V Dual N-Channel MOSFET

AO V Dual N-Channel MOSFET 3V Dual N-Channel MOFET RFET TM General Description RFET TM The AO9 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON) and low gate charge. This

More information

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0. V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion

More information

AO V Complementary Enhancement Mode Field Effect Transistor

AO V Complementary Enhancement Mode Field Effect Transistor AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used

More information

Top View. Top View S2 G2 S1 G1

Top View. Top View S2 G2 S1 G1 AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low

More information

AON7404G 20V N-Channel MOSFET

AON7404G 20V N-Channel MOSFET AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A

More information

V DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2

V DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2 3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor OD452 N-Channel Enhancement Mode Field Effect Transistor General Description The OD452 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60 AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness

More information

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features 442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor AO4 N-Channel Enhancement Mode Field Effect Transistor eneral escription The AO4 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

S G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA

S G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L. AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs

More information

PPM3T60V2 P-Channel MOSFET

PPM3T60V2 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V

More information

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D. SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They

More information

M C C. Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix "-HF"

M C C.  Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix -HF omponents 2736 Marilla Street Chatsworth!"# $%!"# MCQNY Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab

PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting

More information

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise

More information

MDS9651 Complementary N-P Channel Trench MOSFET

MDS9651 Complementary N-P Channel Trench MOSFET General Description The MDS961 uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability (D2) 6(D2) 7(D1) 8(D1) MDS961 Complementary

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPU7N6S5 SPD7N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 Ultra low gate charge Periodic avalanche rated Extreme dv/dt

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N and PChannel 3 V (DS) MOSFET Si539DDL D 6 SOT363 SC7 Dual (6 leads) S 4 G 5 FEATURES TrenchFET power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999

More information

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.

Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs. IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90. SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating

More information

OptiMOS 3 M-Series Power-MOSFET

OptiMOS 3 M-Series Power-MOSFET BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

IRLML2030TRPbF HEXFET Power MOSFET

IRLML2030TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

More information

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according

More information

TO-247-3L Inner Circuit Product Summary I C) R DS(on)

TO-247-3L Inner Circuit Product Summary I C) R DS(on) Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness

More information

OptiMOS 3 Power-MOSFET

OptiMOS 3 Power-MOSFET OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)

More information