AOP606 Complementary Enhancement Mode Field Effect Transistor
|
|
- Andrew Bennett
- 5 years ago
- Views:
Transcription
1 AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP66 is Pb-free (meets ROHS & Sony 9 specifications). AOP66L is a Green Product ordering option. AOP66 and AOP66L are electrically identical. Features n-channel p-channel V DS (V) = 6V -6V I D = 7.9A (V GS =V) -6.A < mω (V GS =V) < 4mΩ (V GS = -V) < 3mΩ (V GS =4.V) < mω (V GS = -4.V) D D S G S G PDIP-8 D D D D G n-channel S G S p-channel Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V DS 6-6 V Gate-Source Voltage V GS ± ± V Continuous Drain T A = Current A T A =7 C I D A Pulsed Drain Current B I DM 4-3 T A = P D Power Dissipation T A =7 C W Junction and Storage Temperature Range T J, T STG - to - to C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol Device Typ Max Units n-ch 3 4 C/W R θja n-ch 66 8 C/W R θjl n-ch 3 C/W p-ch 3 4 C/W R θja p-ch 66 8 C/W R θjl p-ch 3 C/W
2 AOP66 N Channel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 6 V I DSS Zero Gate Voltage Drain Current V DS =48V, V GS =V T J = C µa I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa. 3 V I D(ON) On state drain current V GS =V, V DS =V 4 A V GS =V, I D =7.9A 7.8 Static Drain-Source On-Resistance T J = 3. 4 mω V GS =4.V, I D =7.A mω g FS Forward Transconductance V DS =V, I D =7.9A 3 S V SD Diode Forward Voltage I S =A,V GS =V.74 V I S Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS C iss Input Capacitance 9 3 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz pf C rss Reverse Transfer Capacitance 6 pf R g Gate resistance V GS =V, V DS =V, f=mhz.6.8 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge nc Q g (4.V) Total Gate Charge 4. 3 nc V GS =V, V DS =3V, I D =7.9A Q gs Gate Source Charge 6 nc Q gd Gate Drain Charge 4.4 nc t D(on) Turn-On DelayTime 7.4 ns t r Turn-On Rise Time V GS =V, V DS =3V, R L =3.9Ω,. ns t D(off) Turn-Off DelayTime R GEN =3Ω 8. ns t f Turn-Off Fall Time. ns t rr Body Diode Reverse Recovery Time I F =7.9A, di/dt=a/µs 34 4 ns Q rr Body Diode Reverse Recovery Charge I F =7.9A, di/dt=a/µs 46 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using 8 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The SOA curve provides a single pulse rating. Rev 3: Sept THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
3 AOP66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 4 V V 4V V DS =V I D (A) I D (A) 3.V V GS =3V 3 4 V DS (Volts) Fig : On-Region Characteristics V GS (Volts) Figure : Transfer Characteristics 4. (mω) 8 6 V GS =4.V V GS =V Normalized On-Resistance V GS =V I D =7.9A V GS =4.V I D =7.A 4 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature.E+ I D =7.9A.E+ (mω) 4 3 I S (A).E-.E-.E-3.E V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E V SD (Volts) Figure 6: Body-Diode Characteristics
4 AOP66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL V GS (Volts) V DS =V I D =7.9A Capacitance (pf) 3 3 C oss C rss C iss 3 4 Q g (nc) Figure 7: Gate-Charge Characteristics 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)... limited T J(Max) = C T A =.s s s DC µs ms ms µs Power (W) 4 3 T J(Max) = C T A =.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =4 C/W In descending order D=.,.3,.,.,.,., single pulse Single Pulse..... Figure : Normalized Maximum Transient Thermal Impedance P D T on T
5 AOP66 P-Channel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-µa, V GS =V -6 V I DSS Zero Gate Voltage Drain Current V DS =-48V, V GS =V - T J = C - µa I GSS Gate-Body leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-µa V I D(ON) On state drain current V GS =-V, V DS =-V -3 A V GS =-V, I D =-6.A 34 4 Static Drain-Source On-Resistance T J = 8 7 mω V GS =-4.V, I D =-.A 4 mω g FS Forward Transconductance V DS =-V, I D =-6.A 7.8 S V SD Diode Forward Voltage I S =-A,V GS =V V I S Maximum Body-Diode Continuous Current -3 A DYNAMIC PARAMETERS C iss Input Capacitance 47 9 pf C oss Output Capacitance V GS =V, V DS =-3V, f=mhz 79 pf C rss Reverse Transfer Capacitance pf R g Gate resistance V GS =V, V DS =V, f=mhz.9.3 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 4. nc Q g (4.V) Total Gate Charge (4.V).8 8 nc V GS =-V, V DS =-3V, I D =-6.A Q gs Gate Source Charge.8 nc Q gd Gate Drain Charge 9.6 nc t D(on) Turn-On DelayTime 9.8 ns t r Turn-On Rise Time V GS =-V, V DS =-3V, R L =4.7Ω, 6. ns t D(off) Turn-Off DelayTime R GEN =3Ω 44 ns t f Turn-Off Fall Time.7 ns t rr Body Diode Reverse Recovery Time I F =-6.A, di/dt=a/µs 3 4 ns Q rr Body Diode Reverse Recovery Charge I F =-6.A, di/dt=a/µs 4 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any in given application depends depends on the on the user's user's specific specific board board design. design. The The current current rating rating is based is based on the on the t s t s thermal thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,,4 are obtained using 8 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev: August
6 AOP66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3 -V -4V -6V -3.V V DS =-V -I D (A) -3V V GS =-.V 3 4 -V DS (Volts) Fig : On-Region Characteristics -I D (A) V GS (Volts) Figure : Transfer Characteristics 4. (mω) 4 3 V GS =-4.V V GS =-V Normalized On-Resistance V GS =-V I D =-6.A V GS =-4.V I D =-.A 3 -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 9 8 I D =-6.A.E+.E+ (mω) V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage -I S (A).E-.E-.E-3.E-4.E-.E V SD (Volts) Figure 6: Body-Diode Characteristics
7 AOP66 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL -V GS (Volts) V DS =-3V I D =-6.A Capacitance (pf) 3 3 C oss C rss C iss 3 4 -Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).... T J(Max) = C, T A = limited s s.s DC µs ms ms. -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) µs Power (W) 4 3 T J(Max) = C T A =... Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =4 C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance P D T on T
AON4605 Complementary Enhancement Mode Field Effect Transistor
AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form
More informationAO4620 Complementary Enhancement Mode Field Effect Transistor
AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationAO V Dual P + N-Channel MOSFET
4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters
More informationAO3411 P-Channel Enhancement Mode Field Effect Transistor
January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More informationAO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
More informationAO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor
Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)
More informationAOT404 N-Channel Enhancement Mode Field Effect Transistor
AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationAOP605 Complementary Enhancement Mode Field Effect Transistor
AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed
More informationAO4802 Dual N-Channel Enhancement Mode Field Effect Transistor
July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation
More informationMax Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG
3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
More informationAO V Dual N-Channel MOSFET
AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide
More informationAOD4184A 40V N-Channel MOSFET
4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current
More informationAOD466 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
More informationV DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D
AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationV DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A
AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G
AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized
More informationAON V N-Channel MOSFET
AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V
AON7 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at 4.V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1
AON74B 3V NChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1
3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
3V NChannel MOSFET General Description Trench Power MOSFET technology Very Low R DS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View
AON78 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationAON V N-Channel SRFET
AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1
AON7556 3V NChannel AlphaMOS General Description Trench Power AlphaMOS (αmos LV) technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D
More informationAO V Dual N-Channel MOSFET
3V Dual N-Channel MOFET RFET TM General Description RFET TM The AO9 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON) and low gate charge. This
More informationAON V Common-Drain Dual N-Channel MOSFET
2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree
More informationAONR V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS
More informationAON V Channel AlphaSGT TM
AON6 V Channel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Driven RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R
More informationAOD452 N-Channel Enhancement Mode Field Effect Transistor
OD452 N-Channel Enhancement Mode Field Effect Transistor General Description The OD452 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationAON6266E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationAOD452 N-Channel Enhancement Mode Field Effect Transistor
AO4 N-Channel Enhancement Mode Field Effect Transistor eneral escription The AO4 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol
3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationAOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver
AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View
AON77 V NChannel MOFET RFET TM General Description RFET TM AON77 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
More informationShenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features
442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationProduct Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J
P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationM C C. Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix "-HF"
omponents 2736 Marilla Street Chatsworth!"# $%!"# MCQNY Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationAO V P-Channel MOSFET
AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device
More informationOptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
More informationN-Channel 30-V (D-S) MOSFET With Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New
More informationSSF7NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche
More informationSSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description
Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationN-Channel ENHANCEMENT MODE POWER MOSFET 0V
PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION
More informationPPM3T60V2 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationMDS9651 Complementary N-P Channel Trench MOSFET
General Description The MDS961 uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability (D2) 6(D2) 7(D1) 8(D1) MDS961 Complementary
More informationOptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationOptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationAOD444/AOI444 60V N-Channel MOSFET
AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
More informationOptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.
AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol
AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G
More informationSIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationTO-247-3L Inner Circuit Product Summary I C) R DS(on)
Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
More informationTSP10N60M / TSF10N60M
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA
AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationOptiMOS TM 3 Power-Transistor
Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More information