AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

Transcription

1 Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n- channel FET to minimize body diode losses.ao467l is offered in a lead free package. Features n-channel p-channel V DS (V) = V -V I D = 6.9A -6A R DS(ON) R DS(ON) < 28mΩ (V GS =V) < 35mΩ (V GS = V) < 42mΩ (V GS =4.5V) < 58mΩ (V GS = 4.5V) V F <.5V@A D2 D S2/A G2 S G SOIC-8 D2/K D2/K D D G2 K A S2 n-channel G S p-channel Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± ± V Continuous Drain T A = Current A T A =7 C I D A Pulsed Drain Current B I DM - T A = 2 2 P D Power Dissipation T A =7 C W Junction and Storage Temperature Range T J, T STG -55 to 5-55 to 5 C Parameter Reverse Voltage Symbol V DS Maximum Schottky Units V Continuous Forward T A = 3 Current A T A =7 C I D 2 A Pulsed Forward Current B I DM Power Dissipation A T A = 2 P D T A =7 C.28 W Junction and Storage Temperature Range T J, T STG -55 to 5 C Alpha & Omega Semiconductor, Ltd.

2 AO467, AO467L Thermal Characteristics: n-channel, Schottky and p-channel Parameter Symbol Device Typ Max Units Maximum Junction-to-Ambient A t s n-ch C/W R θja Maximum Junction-to-Ambient A Steady-State n-ch 74 C/W Maximum Junction-to-Lead C Steady-State R θjl n-ch 35 6 C/W Maximum Junction-to-Ambient A t s p-ch C/W R θja Maximum Junction-to-Ambient A Steady-State p-ch 74 C/W Maximum Junction-to-Lead C Steady-State R θjl p-ch 35 4 C/W Maximum Junction-to-Ambient A t s Schottky C/W R θja Maximum Junction-to-Ambient A Steady-State Schottky 7 C/W Maximum Junction-to-Lead C Steady-State R θjl Schottky 32 4 C/W Alpha Omega Semiconductor, Ltd.

3 AO467, AO467L N-Channel + Schottky Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =25µA, V GS =V V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =V 25 T J =55 C µa I GSS Gate-Body leakage current V DS =V, V GS =±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA.9 3 V I D(ON) On state drain current V GS =4.5V, V DS =5V A V GS =V, I D =6.9A R DS(ON) Static Drain-Source On-Resistance T J = mω V GS =4.5V, I D =5.A mω g FS Forward Transconductance V DS =5V, I D =6.9A 5.4 S V SD Body-Diode+Schottky Forward Voltage I S =A.45.5 V I S Maximum Body-Diode+Schottky Continuous Current 5.5 A DYNAMIC PARAMETERS C iss Input Capacitance 68 8 pf C oss Output Capacitance (FET+Schottky) V GS =V, V DS =5V, f=mhz 3 pf C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge nc Q g (4.5V) Total Gate Charge 6.74 nc V GS =V, V DS =5V, I D =6.9A Q gs Gate Source Charge.82 nc Q gd Gate Drain Charge 3.2 nc t D(on) Turn-On DelayTime 4.6 ns t r Turn-On Rise Time V GS =V, V DS =5V, R L =2.2Ω, 4. ns t D(off) Turn-Off DelayTime R GEN =3Ω.6 ns t f Turn-Off Fall Time 5.2 ns t rr Body-Diode+Schottky Reverse Recovery Time I F =6.9A, di/dt=a/µs ns Q rr Body-Diode+Schottky Reverse Recovery Charge I F =6.9A, di/dt=a/µs 4. nc SCHOTTKY PARAMETERS V F Forward Voltage Drop I F =.A.45.5 V V R =V.7.5 I rm Maximum reverse leakage current V R =V, T J = 3.2 ma V R =V, T J =5 C 2 C T Junction Capacitance V R =5V 37 pf A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. Alpha Omega Semiconductor, Ltd.

4 AO467, AO467L P-Channel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-25µA, V GS =V - V I DSS V DS =-24V, V GS =V - Zero Gate Voltage Drain Current µa T J =55 C -5 I GSS Gate-Body leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-25µA V I D(ON) On state drain current V GS =-V, V DS =-5V A R DS(ON) V GS =-V, I D =-6A mω Static Drain-Source On-Resistance T J = V GS =-4.5V, I D =-5A mω g FS Forward Transconductance V DS =-5V, I D =-6A 3 S V SD Diode Forward Voltage I S =-A,V GS =V V I S Maximum Body-Diode Continuous Current -4.2 A DYNAMIC PARAMETERS C iss Input Capacitance 9 pf C oss Output Capacitance V GS =V, V DS =-5V, f=mhz 9 pf C rss Reverse Transfer Capacitance 22 pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) nc Q g (4.5V) Total Gate Charge (4.5V) 9.6 nc V GS =-V, V DS =-5V, I D =-6A Q gs Gate Source Charge 2.7 nc Q gd Gate Drain Charge 4.5 nc t D(on) Turn-On DelayTime 7.7 ns t r Turn-On Rise Time V GS =-V, V DS =-5V, R L =2.7Ω, 5.7 ns t D(off) Turn-Off DelayTime R GEN =3Ω.2 ns t f Turn-Off Fall Time 9.5 ns t rr Body Diode Reverse Recovery Time I F =-6A, di/dt=a/µs 24 ns Q rr Body Diode Reverse Recovery Charge I F =-6A, di/dt=a/µs 8.8 nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. Alpha Omega Semiconductor, Ltd.

5 AO467, AO467L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL I D (A) V 6V 5V 4.5V 3.5V V GS =3V V V DS (Volts) Fig : On-Region Characteristics I D (A) V DS =5V V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (mω) V GS =4.5V V GS =V 5 5 I D (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance I D =5A V GS =V V GS =4.5V Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 7.E+ 6 I D =5A.E+ R DS(ON) (mω) 5 4 I S Amps.E-.E V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage.E V SD (Volts) Figure 6: Body diode with parallel Schottky characteristics Alpha & Omega Semiconductor, Ltd.

6 AO467, AO467L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL V GS (Volts) V DS =5V I D =6.9A Q g (nc) Figure 7: Gate-Charge characteristics Capacitance (pf) C rss C iss C oss (FET + Schottky) f=mhz V GS =V V DS (Volts) Figure 8: Capacitance Characteristics: MOSFET + Parallel Schottky I D (Amps). R DS(ON) limited ms ms.s µs. V DS (Volts) s s DC T J(Max) =5 C T A = µs Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power W 4 T J(Max) =5 C T A =... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =62.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T Alpha & Omega Semiconductor, Ltd.

7 AO467, AO467L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 -V -6V -5V -4.5V 25 V DS =-5V -4V -I D (A) 5 -I D (A) 5-3.5V 5 V GS =-3V V DS (Volts) Fig : On-Region Characteristics V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (mω) V GS =-4.5V V GS =-V I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance I D =-6A V GS =-V V GS =-4.5V Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 9 I D =-6A.E+.E+ R DS(ON) (mω) V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -I S (A).E-.E-2.E-3.E-4.E-5.E V SD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd.

8 AO467, AO467L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 8 V DS =-5V I D =-6A 5 25 C iss -V GS (Volts) Capacitance (pf) C oss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).... T J(Max) =5 C, T A = R DS(ON) limited s s.s DC µs µs ms ms. -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) 4 T J(Max) =5 C T A =... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =62.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse P D T on T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.

9 AO467, AO467L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 25 f = MHz I F (Amps).. Capacitance (pf) V F (Volts) Figure 2: Schottky Forward Characteristics V KA (Volts) Figure 3: Schottky Capacitance Characteristics.7 V F (Volts) I F =A I F =3A Leakage Current (ma).. V R =V Temperature ( C) Figure 4: Schottky Forward Drop vs. Junction Temperature Temperature ( C) Figure 5: Schottky Leakage current vs. Junction Temperature Z θja Normalized Transient Thermal Resistance. D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja =62.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse Pulse Width (s) Figure 5: Schottky Normalized Maximum Transient Thermal Impedance P D T on T off Alpha & Omega Semiconductor, Ltd.

10 ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Package Data SYMBOLS A A A2 b c D E e E h L aaa θ DIMENSIONS IN MILLIMETERS MAX DIMENSIONS IN INCHES MIN NOM MIN NOM MAX BSC.5 BSC θ NOTE:. LEAD FINISH: 5 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN LOGO F A Y W L C NOTE: LOGO - AOS LOGO PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. L C - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO467 CODE 467 Rev. A

11 ALPHA & OMEGA SEMICONDUCTOR, INC. Document No. PD-57 Version rev A Title AO467L Package Data Sheet SO-8 LEAD FREE SYMBOLS A A A2 b c D E e E h L aaa θ DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN NOM MAX MIN NOM MAX BSC.5 BSC θ NOTE:. LEAD FINISH: LEAD FREE COATING 2. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN NOTE: LOGO - AOS LOGO PART NUMBER CODE,Lead_Free F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. L T - ASSEMBLY LOT CODE SO-8 PART NO. CODE UNIT: mm PART NO. AO467L CODE 467

12 ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Tape and Reel Data SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation