Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

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1 F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer C-C converter where fast switching, low conduction loss and high efficiency are needed. Features 7.9 A, 3 V. R (ON) = V G = V R (ON) = 36 V G = 4. V Very low gate charge. High switching speed High performance trench technology for extremely low R (ON) High power and current handling capability in a widely used surface mount package O-8 G 7 8 Absolute Maximum Ratings TA= o C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 3 V V G Gate-ource Voltage ± V I rain Current Continuous (Note a) 7.9 A P Pulsed 4 Power issipation for ingle Operation (Note a). (Note b). (Note c). T J, T TG Operating and torage Junction Temperature Range - to + C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information evice Marking evice Reel ize Tape width Quantity F94 F94 3 mm units W Fairchild emiconductor Corporation F94 Rev (W)

2 Electrical Characteristics T A = C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain ource Breakdown Voltage V G = V, I = µa 3 V BV Breakdown Voltage Temperature I T J Coefficient = µa, Referenced to C 8 mv/ C I Zero Gate Voltage rain Current V = 4 V, V G = V µa I GF Gate Body Leakage, Forward V G = V, V = V na I GR Gate Body Leakage, Reverse V G = V V = V na F94 On Characteristics (Note ) V G(th) Gate Threshold Voltage V = V G, I = µa.6. V VG(th) T J R (on) Gate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = µa, Referenced to C V G = V, I = 7.9 A V G = V, I = 7.9 A, T J= C V G = 4. V, I = 6. A -4.3 mv/ C I (on) On tate rain Current V G = V, V = V 6 A g F Forward Transconductance V = V, I = 7.9 A ynamic Characteristics C iss Input Capacitance V = V, V G = V, 83 pf C oss Output Capacitance f =. MHz 8 pf Reverse Transfer Capacitance 8 pf C rss witching Characteristics (Note ) t d(on) Turn On elay Time V = V, I = A, 6 ns t r Turn On Rise Time V G = V, R GEN = 6 Ω ns t d(off) Turn Off elay Time 8 3 ns t f Turn Off Fall Time ns Q g Total Gate Charge V = V, I = 7.9 A, 4 nc Q gs Gate ource Charge V G = V.7 nc Q gd Gate rain Charge 3. nc rain ource iode Characteristics and Maximum Ratings I Maximum Continuous rain ource iode Forward Current A V rain ource iode Forward Voltage V G = V, I = A (Note ).7. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design mω a) /W when mounted on a in pad of oz copper b) /W when mounted on a.4 in pad of oz copper c) /W when mounted on a minimum pad. cale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.% F94 Rev (W)

3 Typical Characteristics F94 3 VG = V 4.V. 6.V.V 3.V VG = 3.V 4.V 3.V. 3.V 4.V 4.V.V 6.V.V V... V, RAIN-OURCE VOLTAGE (V). 3 I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage I = 7.9A VG = V.8 I = 7.9 A TA = o C.6. TA = o C TJ, JUNCTION TEMPERATURE ( o C) VG, GATE TO OURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-ource Voltage. 3 V = V TA = - o C o C o C VG = V TA = o C o.. - o C VG, GATE TO OURCE VOLTAGE (V) V, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. F94 Rev (W)

4 Typical Characteristics F94 8 I = 8.4A V = V V V f = MHz VG = V 6 9 CI CO Qg, GATE CHARGE (nc) CR 3 V, RAIN TO OURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.... R(ON) LIMIT VG = V INGLE PULE RθJA = o C/W TA = o C µs ms ms ms s s C. V, RAIN-OURCE VOLTAGE (V) INGLE PULE 4 RθJA = o C/W TA = o C 3... t, TIME (EC) Figure 9. Maximum afe Operating Area. Figure. ingle Pulse Maximum Power issipation.... = INGLE PULE RθJA(t) = r(t) + RθJA RθJA = C/W T J - T A = P * RθJA(t) uty Cycle, = t / t.... t, TIME (sec) P(pk) t t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. F94 Rev (W)

5 TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ICLAIMER ACEx Bottomless CoolFET CROVOLT E CMO TM FACT FACT Quiet eries FAT FATr GTO HieC IOPLANAR MICROWIRE POP PowerTrench QFET Q Quiet eries uperot -3 uperot -6 uperot -8 yncfet TinyLogic UHC VCX FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT TATU EFINITION efinition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product tatus efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E