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1 FM863C N-Channel ual Cool TM Power Trench MOFET 8 V, 76 A, 3. mω Features ual Cool TM Top ide Cooling PQFN package Max r (on) = 3. mω at V G = V, I = 24 A Max r (on) = 4. mω at V G = 8 V, I = 2 A High performance technology for extremely low r (on) % UIL Tested RoH Compliant Pin Top Power 56 G Bottom General escription July 23 This N-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process. Advancements in both silicon and ual Cool TM package technologies have been combined to offer the lowest r (on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications ynchronous Rectifier for C/C Converters Telecom econdary ide Rectification High End erver/workstation Vcore Low ide Pin G FM863C N-Channel ual Cool TM Power Trench MOFET MOFET Maximum Ratings T A = 25 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 8 V V G Gate to ource Voltage ±2 V I rain Current -Continuous T C = 25 C 76 A -Continuous T A = 25 C (Note a) 24 -Pulsed 5 E A ingle Pulse Avalanche Energy (Note 3) 24 mj Power issipation T C = 25 C 25 P Power issipation T A = 25 C (Note a) 3.2 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Top ource) 2.3 R θjc Thermal Resistance, Junction to Case (Bottom rain). R θja Thermal Resistance, Junction to Ambient (Note a) 38 R θja Thermal Resistance, Junction to Ambient (Note b) 8 R θja Thermal Resistance, Junction to Ambient (Note i) 6 R θja Thermal Resistance, Junction to Ambient (Note j) 23 R θja Thermal Resistance, Junction to Ambient (Note k) Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity 863 FM863C ual Cool TM Power mm 3 units FM863C Rev. C3
2 Electrical Characteristics T J = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 25 μa, V G = V 8 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 25 μa, referenced to 25 C 45 mv/ C I Zero Gate Voltage rain Current V = 64 V, V G = V μa I G Gate to ource Leakage Current V G = ±2 V, V = V ± na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 25 μa V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics witching Characteristics I = 25 μa, referenced to 25 C - mv/ C V G = V, I = 24 A r (on) tatic rain to ource On Resistance V G = 8 V, I = 2 A mω V G = V, I = 24 A, T J = 25 C g F Forward Transconductance V = V, I = 24 A 79 C iss Input Capacitance pf V = 4 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 2 5 pf R g Gate Resistance.2 Ω t d(on) Turn-On elay Time ns t r Rise Time V = 4 V, I = 24 A, ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω ns t f Fall Time 9 8 ns Total Gate Charge V Q G = V to V 72 nc g(tot) Total Gate Charge V G = V to 8 V V = 4 V nc Q gs Total Gate Charge I = 24 A 26 nc Q gd Gate to rain Miller Charge 4 nc FM863C N-Channel ual Cool TM Power Trench MOFET rain-ource iode Characteristics V G = V, I = 2.7 A (Note 2).72.2 V ource to rain iode Forward Voltage V V G = V, I = 24 A (Note 2).8.3 t rr Reverse Recovery Time ns I F = 24 A, di/dt = A/μs Q rr Reverse Recovery Charge nc FM863C Rev. C3 2
3 Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Top ource) 2.3 R θjc Thermal Resistance, Junction to Case (Bottom rain). R θja Thermal Resistance, Junction to Ambient (Note a) 38 R θja Thermal Resistance, Junction to Ambient (Note b) 8 R θja Thermal Resistance, Junction to Ambient (Note c) 27 R θja Thermal Resistance, Junction to Ambient (Note d) 34 R θja Thermal Resistance, Junction to Ambient (Note e) 6 R θja Thermal Resistance, Junction to Ambient (Note f) 9 R θja Thermal Resistance, Junction to Ambient (Note g) 26 R θja Thermal Resistance, Junction to Ambient (Note h) 6 R θja Thermal Resistance, Junction to Ambient (Note i) 6 R θja Thermal Resistance, Junction to Ambient (Note j) 23 R θja Thermal Resistance, Junction to Ambient (Note k) R θja Thermal Resistance, Junction to Ambient (Note l) 3 NOTE:. R θja is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 38 C/W when mounted on a in 2 pad of 2 oz copper b. 8 C/W when mounted on a minimum pad of 2 oz copper C/W FM863C N-Channel ual Cool TM Power Trench MOFET F F G F F G c. till air, 2.9x.4x2.7mm Aluminum Heat ink, in 2 pad of 2 oz copper d. till air, 2.9x.4x2.7mm Aluminum Heat ink, minimum pad of 2 oz copper e. till air, 45.2x4.4x.7mm Aavid Thermalloy Part # -L4B- Heat ink, in 2 pad of 2 oz copper f. till air, 45.2x4.4x.7mm Aavid Thermalloy Part # -L4B- Heat ink, minimum pad of 2 oz copper g. 2FPM Airflow, No Heat ink, in 2 pad of 2 oz copper h. 2FPM Airflow, No Heat ink, minimum pad of 2 oz copper i. 2FPM Airflow, 2.9x.4x2.7mm Aluminum Heat ink, in 2 pad of 2 oz copper j. 2FPM Airflow, 2.9x.4x2.7mm Aluminum Heat ink, minimum pad of 2 oz copper k. 2FPM Airflow, 45.2x4.4x.7mm Aavid Thermalloy Part # -L4B- Heat ink, in 2 pad of 2 oz copper l. 2FPM Airflow, 45.2x4.4x.7mm Aavid Thermalloy Part # -L4B- Heat ink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 3 μs, uty cycle < 2.%. 3. tarting T J = 25 o C, L =.3 mh, I A = 4 A, V = 72 V, V G = V. FM863C Rev. C3 3
4 Typical Characteristics T J = 25 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. V G = 7 V V G = V V G = 8 V V G = 6.5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) I = 24 A V G = V V G = 6 V V G = 5.5 V NORMALIZE RAIN TO OURCE ON-REITANCE V G = 8 V V G = V I, RAIN CURRENT (A) On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 5.5 V I = 24 A V G = 6 V PULE URATION = 8 μs UTY CYCLE =.5% MAX T J = 25 o C T J = 25 o C V G = 6.5 V V G = 7 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V G, GATE TO OURCE VOLTAGE (V) FM863C N-Channel ual Cool TM Power Trench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics T J = 25 o C T J = -55 o C I, REVERE RAIN CURRENT (A) 2.. V G = V T J = 5 o C T J = 25 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current FM863C Rev. C3 4
5 Typical Characteristics T J = 25 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) I = 24 A Q g, GATE CHARGE (nc) Figure 7. V = 4 V V = 3 V V = 5 V f = MHz V G = V 5. 8 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 25 o C T J = 25 o C T J = o C.. 5 t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) V G = 8 V Limited by Package V G = V C iss C oss C rss R θjc =. o C/W T C, CAE TEMPERATURE ( o C) FM863C N-Channel ual Cool TM Power Trench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 2 THI AREA I ms LIMITE BY r (on) ms INGLE PULE ms. T J = MAX RATE s R θja = 8 o C/W s T A = 25 o C C... 4 V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area P(PK), PEAK TRANIENT POWER (W) 2 INGLE PULE R θja = 8 o C/W T A = 25 o C t, PULE WITH (sec) Figure 2. ingle Pulse Maximum Power issipation FM863C Rev. C3 5
6 Typical Characteristics T J = 25 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja 2.. UTY CYCLE-ECENING ORER = INGLE PULE R θja = 8 o C/W t, RECTANGULAR PULE URATION (sec) Figure 3. Junction-to-Ambient Transient Thermal Response Curve P M t t 2 NOTE: UTY FACTOR: = t /t 2 PEAK T J = P M x Z θja x R θja + T A FM863C N-Channel ual Cool TM Power Trench MOFET FM863C Rev. C3 6
7 imensional Outline and Pad Layout FM863C N-Channel ual Cool TM Power Trench MOFET FM863C Rev. C3 7
8 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FP F-PF FRFET Global Power Resource M Green Bridge Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax mwaver OptoHiT OPTOLOGIC OPTOPLANAR *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X FM863C N-Channel ual Cool TM Power Trench MOFET LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PROUCT TATU EFINITION efinition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I64 FM863C Rev. C3 8
Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 60 V V GS Gate to Source Voltage ±20 V
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V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
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YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
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