Features. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units

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1 Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. contains two unique 3V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch () is designed with specific emphasis on reducing switching losses while the lowside switch () is optimized to reduce conduction losses. also includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. Features : Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 3V R DS(on) =.6Ω=@ V GS = V R DS(on) =.Ω=@ V GS = 4.5V : Optimized for low switching losses Low Gate Charge ( 8.5 nc typical) 6.3A, 3V R DS(on) =.8Ω=@ V GS = V R DS(on) =.35Ω=@ V GS = 4.5V D DD 5 4 D SO-8 G SG 8 S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 3 3 V V GSS Gate-Source Voltage ± ± V I D Drain Current - Continuous (Note a) A - Pulsed 3 P D Power Dissipation for Dual Operation W Power Dissipation for Single Operation (Note a).6 (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 mm 5 units Fairchild Semiconductor Corporation Rev C(W)

2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = ma V GS = V, I D = 5 ua 3 3 V BVDSS === T J Breakdown Voltage Temperature Coefficient I D = ma, Referenced to 5 C I D = 5 µa, Referenced to 5 C 6 mv/ C I DSS Zero Gate Voltage Drain V DS = 4 V, V GS = V 5 µa Current I GSSF Gate-Body Leakage, Forward V GS = V, V DS = V All na I GSSR Gate-Body Leakage, Reverse V GS = - V, V DS = V All - na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma V DS = V GS, I D = 5 µa VGS(th) Gate Threshold Voltage === T J Temperature Coefficient R DS(on) Static Drain-Source On-Resistance I D = ma, Referenced to 5 C I D = 5 µa, Referenced to 5 C V GS = V, I D = 8.6 A V GS = V, I D = 8.6 A, T J = 5 C V GS = 4.5 V, I D = 7.5 A V GS = V, I D = 6.3 A V GS = V, I D = 6.3 A, T J = 5 C V GS = 4.5 V, I D = 5.6 A I D(on) On-State Drain Current V GS = V, V DS = 5 V g FS Forward Transconductance V DS = 5 V, I D = 8.6 A V DS = 5 V, I D = 6.3 A V mv/ C Ω A S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, f =. MHz C oss Output Capacitance C rss Reverse Transfer Capacitance pf pf pf Rev C (W)

3 Electrical Characteristics (continued) T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note ) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, V GS = V, R GEN = 6 Ω t r Turn-On Rise Time t d(off) Turn-Off Delay Time t f Turn-Off Fall Time Q g Total Gate Charge V DS = 5 V, I D =.5 A, V GS = 5 V Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS = 5 V, I D = 6.3 A, V GS = 5 V Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current 3..3 A t RR Reverse Recovery Time I F =.5A, ns Reverse Recovery Charge d if/d t = 3 A/µs (Note 3) 9.7 nc Q RR V SD Drain-Source Diode Forward Voltage V GS = V, I S = 3 A (Note ) V GS = V, I S = 6 A (Note ) V GS = V, I S =.3 A (Note ) Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design ns ns ns ns nc nc nc V a) 78 /W when mounted on a.5 in pad of oz copper b) 5 /W when mounted on a. in pad of oz copper c) 35 /W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% 3. See SyncFET Schottky body diode characteristics below. Rev C (W)

4 Typical Characteristics: I D, DRAIN CURRENT (A) 5 V GS = V 6.V 4 4.5V 5.V 4.V 3 3.5V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.5.5 V GS = 3.V 3.5V 4.V 4.5V 6.V V V DS, DRAIN-SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D =.5A V GS = V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM).4 I D =.5 A T A = 5 o C.5 T A = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = 5V T A = -55 o C 5 o C o I S, REVERSE DRAIN CURRENT (A). V GS = V T A = o C 5 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C (W)

5 Typical Characteristics: V GS, GATE-SOURCE VOLTAGE (V) I D =.5A V DS = 5V V 8 5V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C ISS f = MHz V GS = V C OSS 5 C RSS V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I D, DRAIN CURRENT (A).. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 5 o C DC µs ms ms ms s s. V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 35 C/W T A = 5 C... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. Rev C (W)

6 Typical Characteristics 4 3 VGS = V 6.V 4.5V 4.V.8.6 VGS = 3.5V 3.5V 3.V.4. 4.V 4.5V 5.V 6.V V.5V 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage..6.4 ID = 6.3A V GS = V.8.6 I D = 3.5A..4 T A = 5 o C.8. T A = 5 o C TJ, JUNCTION TEMPERATURE ( o C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 4 3 V DS = 5V TA = -55 o C 5 o C 5 o C V GS = V TA = 5 o C. 5 o C -55 o C VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C (W)

7 Typical Characteristics I D = 6.3A V DS = 5V 8 6 5V V 8 CISS f = MHz VGS = V COSS Qg, GATE CHARGE (nc) CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics... R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W TA = 5 o C µs ms ms ms s s DC. VDS, DRAIN-SOURCE VOLTAGE (V) 3 SINGLE PULSE 5 R θja = 35 o C/W TA = 5 o C SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = Single Pulse R θja (t) = r(t) * R θja R θja = 35 C/W T J - T A = P * R θja(t) Duty Cycle, D = t /t t, TIME (s ec) P(pk ) t t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev C (W)

8 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure shows the reverse recovery characteristic of the. Current: 3A/div Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A)... o C 5 o C. 3 V DS, REVERSE VOLTAGE (V) ns/div Figure. SyncFET body diode reverse recovery characteristic. Figure 4. SyncFET body diode reverse leakage versus drain-source voltage and temperature. For comparison purposes, Figure 3 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS698). Current: 3A/div ns/div Figure 3. Non-SyncFET (FDS698) body diode reverse recovery characteristic. Rev C (W)

9 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F

Dual N & P-Channel Enhancement Mode Field Effect Transistor. Features R DS(ON) = V GS = 4.5 V G2 6 Q1(N) TA=25 o C unless otherwise noted

Dual N & P-Channel Enhancement Mode Field Effect Transistor May General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell