PPM3T60V2 P-Channel MOSFET

Transcription

1 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) V GS =-10V -60 V GS =-4.5V -2 G(1) S(2) Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-250μA,V GS =0V V Zero Gate Voltage Drain Current I DSS V DS =-60V,V GS =0V μa Gate-Body Leakage Current I GSS V DS =0V,V GS =±20V - - ±10 ua Gate Threshold Voltage V GS(th) V DS =V GS, I D =-250μA -1-3 V Static Drain-Source On-Resistance R DS(ON) V GS =-10V, I D =-1.8A mω V GS =-4.5V, I D =-1.4A mω Diode Forward Voltage V SD I S =-1.2A,V GS =0V -1.2 V Total Gate Charge Qg 6.3 nc Gate-Drain Charge Qgs V GS =-4.5V, V DS =-48V, I D =-1A 2.3 nc Input Capacitance Qgd 1.8 nc Input Capacitance C ISS pf Output Capacitance C DSS V GS =0V, V DS =-25V, f=1mhz - 41 pf Reverse Transfer Capacitance C RSS - 12 pf Gate Resistance Rg V GS =0V, V DS =0V,f=1MHz 9.8 Ω Turn-On Delay Time t d(on) - 20 Turn-On Rise Time t r V DD =-6V, V GS =-4.5V, 33.1 R L =6Ω, R G =6Ω, Turn-Off Delay Time t d(off) I D =-1A 5.2 ns Turn-Off Fall Time t f Rev

2 Absolute maximum Rating Symbol Value Units Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current Continuous T A =25 I D -2 A Pulsed T A =70 I D -1.5 A Pulsed Drain Current I DM -7.6 A Total Power Dissipation T A =25 P D 1.4 W T A =70 P D 0.9 W Storage Temperature Range T STG -55 to +150 Thermal Resistance-Junction to Ambient* R θja 90 /W *The device mounted on 1in 2 FR4 board with 2 oz copper Typical Characteristics On Resistance (Normalized) RDS(ON) On-Resistance(Ω) V GS =-4.5V V GS =-10V T J -Junction Temperature( ) I D -Drain Current (A) Fig 1. On Resistance vs. Junction Temperature Fig 2. On-Resistance vs. Drain Current C-Capacitance (pf) C OSS C ISS RDS(ON) On-Resistance(Ω) I D =-1A C RSS V DS -Drain-to-Source Voltage(V) Fig 3. Capacitance V GS -Gate-to-Source Voltage (V) Fig 4. On-Resistance vs. Gate-to-Source Voltage Rev

3 V GS =-5~-10V VGS(th)-Variance(V) I D =-250μA ID Drain Current (A) V GS =-4V V GS =-3.5V T J -Temperature ( ) Fig 5. Threshold Voltage V GS -Drain-to-Source Voltage (V) Fig 6. On-Region Characteristics VGS-Gate-to-Source Voltage (V) V DS =30V I D =2.6A IS Source Current (A) QG-Total Gate Charge(nC) Fig 7. Gate Charge T A = V SD -Source-to-Drain Voltage (V) Fig 8. On-Resistance vs. Drain Current R DS(ON) limited -10 ID-Drain Current(A) -1 1s 10ms 0.1s 10s 1ms -0.1 DC T A = V DS -Drain- Source Voltage(V) Fig 9. Maximum Forward Biased Safe Operating Area Rev

4 Normalized Effective Transient Thermal Impedance 1E0 1E-1 70% 50% 30% 10% 5% 2% t1 t2 1E-2 1% 1. Duty Cyde, D= t1 0.5% t2 2. Per Unit Base=Rth JA =90 /W (t) 3.T 0.2% JM -T A =P DM Zth JA 4.Surface Mounted Sing Pulse Curve 1E-3 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3 1E4 Square Wave Pulse Duration (sec) Fig 10.Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: P DM Product dimension(sot-23-3l) A (3) θ C B (1) (2) D E G F H K J Rev

5 Dim Millimeters Inches MIN MAX MIN MAX A B C D 0.950(BSC) 0.037(BSC) E F G 0.55(REF) 0.022(REF) H J K θ Rev

6 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev