-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
|
|
- Elvin Stephens
- 5 years ago
- Views:
Transcription
1 DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + V GS =.V ma Q V GS =.V V GS =.8V V GS =.V 9mA Features and Benefits Low On-Resistance Very low Gate Threshold Voltage,.V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package.8mm x.6mm Totally Lead-Free & Fully RoHS compliant (Note & ) Halogen and Antimony Free. Green Device (Note V GS = -.V -8mA Q V GS = -.V V GS = -.8V -ma V GS = -.V -ma Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Analog Switch Case: X-DFN86-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-, Method 8 Weight:.7 grams (Approximate) Pin D D D G S G G ESD PROTECTED Gate Protection Diode S Gate Protection Diode S S G D Top View Bottom View Device Symbol Pin Configuration Top View Ordering Information (Note ) Part Number Case Packaging DMCDUDA-7B X-DFN86-6,/Tape & Reel Notes:. No purposely added lead. Fully EU Directive /9/EC (RoHS) & /6/EU (RoHS ) compliant.. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green" products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds.. For packaging details, go to our website at Marking Information B B = Product Type Marking Code Top View DMCDUDA Document number: DS9 Rev. - of May 7
2 DMCDUDA Maximum Ratings Q N-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note ) Steady T A = + C I State D T A = +7 C 6 ma Pulsed Drain Current (Note 6) I DM ma Maximum Ratings Q P-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS - V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note ) V GS = -.V Steady T A = + C -8 I State D T A = +7 C -6 ma Pulsed Drain Current (Note 6) I DM - ma Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note ) P D mw Thermal Resistance, Junction to Ambient (Note ) Steady State R θja 9 C/W Operating and Storage Temperature Range T J, T STG - to + C Notes:. Device mounted on FR- PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, μs pulse duty cycle = %. Electrical Characteristics Q N-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = μa Zero Gate Voltage Drain C = + C I DSS μa V DS = 6V, V GS = V Gate-Source Leakage I GSS ± μa V GS = ±V, V DS = V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS(TH)..7. V V DS = V GS, I D = μa..99 V GS =.V, I D = ma Static Drain-Source On-Resistance R DS(ON).6. V GS =.V, I D = ma Ω.8.8 V GS =.8V, I D = ma.. V GS =.V, I D = ma Diode Forward Voltage V SD.6. V V GS = V, I S = ma DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss pf V DS = V, V GS = V, Output Capacitance C oss.6 pf f =.MHz Reverse Transfer Capacitance C rss.6 pf Gate Resistance R G Ω V DS = V, V GS = V, f =.MHz Total Gate Charge Q g. nc V GS =.V, V DS = V, Gate-Source Charge Q gs.6 nc I D = ma Gate-Drain Charge Q gd. nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns V DD = V, V GS =.V, Turn-Off Delay Time t D(OFF) ns R G = Ω, I D = ma Turn-Off Fall Time t F ns DMCDUDA Document number: DS9 Rev. - of May 7
3 DMCDUDA Electrical Characteristics Q P-CHANNEL (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS - V V GS = V, I D = -μa Zero Gate Voltage Drain C = + C I DSS - μa V DS = -6V, V GS = V Gate-Source Leakage I GSS ± μa V GS = ±V, V DS = V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS(TH) V V DS = V GS, I D = -μa..9 V GS = -.V, I D = -ma Static Drain-Source On-Resistance R DS(ON).6. V GS = -.V, I D = -ma Ω.9. V GS = -.8V, I D = -ma. V GS = -.V, I D = -ma Diode Forward Voltage V SD V V GS = V, I S = -ma DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss 8. pf V DS = -V, V GS = V, Output Capacitance C oss.9 pf f =.MHz Reverse Transfer Capacitance C rss. pf Gate Resistance R G 98 Ω V DS = V, V GS = V, f =.MHz Total Gate Charge Q g. nc V GS = -.V, V DS = -V, Gate-Source Charge Q gs.7 nc I D = -ma Gate-Drain Charge Q gd.7 nc Turn-On Delay Time t D(ON). ns Turn-On Rise Time t R. ns Turn-Off Delay Time t D(OFF) ns Turn-Off Fall Time t F. ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. V DD = -V, V GS = -.V, R G = Ω, I D = -ma DMCDUDA Document number: DS9 Rev. - of May 7
4 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMCDUDA Typical Characteristics - N-CHANNEL..8 V GS =.V V GS =.V V GS =.V V GS =.V.8 V DS =.V T J = - T J = T J = 8 T J = T J =.6 V GS =.V V GS =.V.6... V GS =.V.. V GS =.9V V GS =.V... Figure. Typical Output Characteristic... V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.8 V GS =.V.6.. V GS =.V V GS =.8V.8 V GS =.V.6. V GS =.V I D = ma I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic. V GS =.V V GS =.V, I D = ma..8 T J = T J =. V GS =.V, I D = ma V GS =.8V, I D = ma V GS =.V, I D = ma.6 T J = 8 V GS =.V, I D = ma. T J = T J = Figure. Typical On-Resistance vs. Drain Current and Temperature DMCDUDA Document number: DS9 Rev. - of Figure 6. On-Resistance Variation with Temperature May 7
5 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDUDA Typical Characteristics - N-CHANNEL (Cont.).8.6. V GS =.V, I D = ma V GS =.V, I D = ma.8 I D = ma. V GS =.8V, I D = ma V GS =.V, I D = ma.6 I D = μa.8.6. V GS =.V, I D = ma Figure 7. On-Resistance Variation with Temperature V GS = V Figure 8. Gate Threshold Variation vs. Junction Temperature C iss f = MHz. T A = 8 o C C oss... T A = o C T A = o C T A = o C T A = - o C C rss V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure. Typical Junction Capacitance 8 7 R DS(ON) Limited P W = µs 6 V DS = V, I D = ma Q g (nc) Figure. Gate Charge... P W = ms P W = ms P W = ms T J(Max) = T C = Single Pulse DUT on *MRP Board V GS =.V P W = s P W = s DC. Fiugre. SOA, Safe Operation Area DMCDUDA Document number: DS9 Rev. - of May 7
6 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMCDUDA Typical Characteristics - P-CHANNEL..8.6 V GS = -.V V GS = -.V V GS = -.V V GS = -.V.8.6 V DS = -.V 8 -. V GS = -.V.. V GS = -.9V V GS = -.V V GS = -.V V GS = -.V..... Figure. Typical Output Characteristic..... V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic. V GS = -.V V GS = -.V.. V GS = -.8V V GS = -.V I D = -ma.. V GS = -.V I D, DRAIN-SOURCE CURRENT (A) Figure. Typical On-Resistance vs. Drain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 6. Typical Transfer Characteristic. V GS = -.V. V GS = -.V, I D = -ma V GS = -.V, I D = -ma V GS = -.8V, I D = -ma.. 8 V GS = -.V, I D = -ma V GS = -.V, I D = -ma Figure 7. Typical On-Resistance vs. Drain Current and Temperature Figure 8. On-Resistance Variation with Temperature DMCDUDA Document number: DS9 Rev. - 6 of May 7
7 V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) V GS(TH), GATE THRESHOLD VOLTAGE (V) DMCDUDA Typical Characteristics - P-CHANNEL (Cont.).. V GS = -.V, I D = -ma V GS = -.8V, I D = -ma V GS = -.V, I D = -ma.8 I D = -ma..6 I D = -μa.. V GS = -.V, I D = -ma V GS = -.V, I D = -ma Figure 9. On-Resistance Variation with Temperature V.9 GS = V Figure. Gate Threshold Variation vs. Junction Temperature C iss f = MHz. C oss. T A = o C T A = 8 o C. T A = o C T A = o C. T A = - o C C rss V SD, SOURCE-DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current Figure. Typical Junction Capacitance R DS(ON) Limited P W = ms P W = µs V DS = -V, I D = -ma Q g (nc) Figure. Gate Charge... P W = ms P W = ms P W = s T J(Max) = T C = Single Pulse DUT on *MRP Board V GS = -.V P W = s DC. Figure. SOA, Safe Operation Area DMCDUDA Document number: DS9 Rev. - 7 of May 7
8 r(t), TRANSIENT THERMAL RESISTANCE DMCDUDA. D=.7 D=. D=. D=. D=. D=.9. D=.. D=. D=. D=Single Pulse E-.... t, PULSE DURATION TIME (sec) Figure. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 9 /W Duty Cycle, D = t / t DMCDUDA Document number: DS9 Rev. - 8 of May 7
9 DMCDUDA Package Outline Dimensions Please see for the latest version. X-DFN86-6 A z E La(x) e R. D A A Seating Plane z k L(x) X-DFN86-6 Dim Min Max Typ A A... A b.7.. b... D E..6.6 e k L..8. La.7.. z z All Dimensions in mm b(x) b(x) Suggested Pad Layout Please see for the latest version. X-DFN86-6 Y G X G X Y Y Dimensions Value (in mm) G. G. X. X. X.8 Y.7 Y. Y.76 X DMCDUDA Document number: DS9 Rev. - 9 of May 7
10 DMCDUDA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 7, Diodes Incorporated DMCDUDA Document number: DS9 Rev. - of May 7
430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More information2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
More informationFeatures. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration
DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V
More informationS S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
More informationBottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
More informationI D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel
DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =
More information(Notes 6 & 8) Top View
NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N
More informationI D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description
More informationSOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)
More informationSOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary
More informationGate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
More informationDrain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel
BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET
More informationTop View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
More information34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
More informationFeatures. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel
N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage
More informationGreen. Pin 1 1 S S S G 2. Bottom View
YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationGreen. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
More informationTop View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
6V P-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits BV SS -6V R S(ON) Max I T C = +25 C mω @ V = -V -4 4mΩ @ V = -4.5V -2 Low On-Resistance Low Input Capacitance Totally Lead-Free &
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationPin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel
YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationGreen. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel
Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationGreen. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More information74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6
DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More informationFeatures. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel
NE PROUCT NCE INFORMTION MHC7LS COMPLEMENTRY ENHNCEMENT MOE MOSFET H-BRIGE Product Summary evice (BR)SS R S(ON) Max N-Channel P-Channel - I Max T = 5 C mω @ =. mω @ =.5.7 7mΩ @ = -. 5mΩ @ = -.5. Features
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationN-Channel ENHANCEMENT MODE POWER MOSFET 0V
PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION
More informationQ 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units
BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair
More information60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com
More informationS S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOFET Product ummary BV 3V R (ON) max I max T C = +25 C 2mΩ @ V G = 4.5V 25mΩ @ V G = 2.5V 14 escription and pplications This MOFET is designed to minimize the on-state resistance
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely
More informationPPM3T60V2 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationM C C. Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix "-HF"
omponents 2736 Marilla Street Chatsworth!"# $%!"# MCQNY Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationOptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationPSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET
Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break
FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationAP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )
UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationistributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance
More information20 V, complementary Trench MOSFET. Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive
Rev. 1 26 June 212 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN22-6 (SOT1118)
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationDM74LS138 DM74LS139 Decoder/Demultiplexer
DM74LS138 DM74LS139 Decoder/Demultiplexer General Description These Schottky-clamped circuits are designed to be used in high-performance memory-decoding or data-routing applications, requiring very short
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationAZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C
LOW DROPOUT LINEAR REGULATOR Description Features The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical.
More informationOptiMOS TM Power-MOSFET
BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified
More informationOptiMOS Small-Signal-Transistor
2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified
More informationFeatures. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units
Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
More informationOptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
More informationOptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
More informationOptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
More informationOptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
More informationSIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max mw Features OptiMOS - power MOSFET for automotive applications I D A PG-HSOF-5 N-channel - Enhancement mode - Normal Level AEC Q qualified
More informationAO3411 P-Channel Enhancement Mode Field Effect Transistor
January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationOptiMOS -3 Small-Signal-Transistor
BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
More informationOptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationN-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationOptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More information20 / 20 V, 800 / 550 ma N/P-channel Trench MOSFET
Rev. 6 October 20 Product data sheet. Product profile. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted
More informationPMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.
Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low
More informationN-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
More informationOptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant
More informationSilicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D
Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating
More informationPMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.
More information