APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET
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1 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2 Features 600V / 2A R DS(on) =3.8Ω(typ),V GS =10V, I D =1.2A Fast switching 100% avalanche tested Improved dv/dt capability.. 3 Absolute Maximum Ratings T C = 25 C unless otherwise noted -XXM0 -XXM0 Symbol Parameter -XXJ0 -XXM1 -- -XXJ1 Units TO-251 TO-252 V DSS Drain-Source Voltage 600 V I D Drain Current - Continuous (T C = 25 C) 2 A - Continuous (T C = 100 C) 1.35 A I DM Drain Current Pulsed A V GS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy mj I AR Avalanche Current 2.0 A E AR Repetitive Avalanche Energy 4.2 mj dv/dt Peak Diode Recovery dv/dt V/ns P D Power Dissipation (T C = 25 C) 42 W -De-rate above 25 C 0.33 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds 300 C * note : 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 V DD =50V, starting T J =25, L=TBD, R G =25Ω, I AS =2A 3 I SD 2A, di/dt 40A/μs, V DD V (BR)DSS, T J 150. Rev:D 1/11
2 4 Thermal Characteristics -XXM0 -XXM0 Symbol Parameter -XXJ0 -XXM1 -- -XXJ1 Units TO-251 TO-252 R θjc Thermal Resistance, Junction-to-Case 3.0 C/W R θcs Thermal Resistance, Case-to-Sink Typ. 50 C/W R θja Thermal Resistance, Junction-to-Ambient 110 C/W 5 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage ΔBV DSS / Breakdown Voltage ΔT J Temperature Coefficient I DSS Gate to Source leakage current I GSSF Gate-Body Leakage Current, Forward I GSSR Gate-Body Leakage Current, Reverse V GS = 0 V, I D = 250 μa V I D = 250 μa, Referenced to 25 C V/ C V DS = 600 V, V GS = 0 V μa V GS = 30 V, V DS = 0 V na V GS = -30 V, V DS = 0 V na On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS, I D = 250 μa V R DS(on) Static Drain-Source On- V Resistance GS = 10 V, I D = 1.2 A Ω g FS Forward Transconductance V DS = 15 V, I D = 1 A S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, I D = 2A, ns t r Turn-On Rise Time R G = 10 Ω, R D =150Ω, ns t d(off) Turn-Off Delay Time V GS =10V ns t f Turn-Off Fall Time ns Q g Total Gate Charge V DS = 480 V, I D = 2A, nc Q gs Gate-Source Charge V GS = 10 V nc Gate-Drain Charge nc Q gd Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A Rev:D 2/11
3 V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 2A V t rr Reverse Recovery Time V GS = 0 V, I F = 2 A, ns Reverse Recovery Charge di F / dt = 100 A/μs μc Q rr Notes: 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 V DD =50V, starting T J =25, L=TBD, R G =25Ω, I AS =2A 3 I SD 2A, di/dt 100A/μs, V DD V (BR)DSS, T J Pulse Test: Pulse width 300μs, Duty cycle 2%. Rev:D 3/11
4 Rev:D 4/11
5 Rev:D 5/11
6 6 Package Dimensions -XXM0 TO-251 TO-251 DIMENSION DIM MILLIMETERS MIN MAX TYP. DIM MIN MAX TYP A H A I B J C K D L E M F N G O 2.29 BSC Rev:D 6/11
7 -XXJ0 TO-251 TO-251 DIMENSION DIM MILLIMETERS MIN MAX TYP. DIM MIN MAX TYP A H A I B J C K E L F N REF. G O Typ. Rev:D 7/11
8 -XXM0 TO-252 TO-252DIMENSION DIM MILLIMETERS MIN MAX TYP. DIM MIN MAX TYP. A J A K B L C M E N F O 2.29 BSC G P 0.51 BSC H Q I R Rev:D 8/11
9 -XXM1 TO-252 TO-252DIMENSION DIM MILLIMETERS MIN MAX TYP. DIM MIN MAX TYP. A I A J B L C M 4.83 MIN. E N 5.21 MIN. F O 2.29 TYP G Q H Rev:D 9/11
10 -XXJ1 TO-252 TO-252DIMENSION DIM MILLIMETERS MIN MAX TYP. DIM MIN MAX TYP A J A K 2.9 REF B L C M 4.83 REF E N 5.35 REF F O H Q I R Rev:D 10/11
11 Note The declared data are only a description of product, information furnished is believed to be accurate and reliable. However, alpha pacific assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of alpha pacific. alpha pacific reserves the right to make changes on this specification without notice at any time. This publication supersedes and replaces all information previously supplied. All alpha pacific products are not authorized for use as critical components in life support devices or systems, except by a written approval of alpha pacific. Reprinting this data sheet - or parts of it - is only allowed with a license of alpha pacific. contact Alpha Pacific Technologies Co., Ltd 3F-6, No.18, Lane 609, Sec.5 Chung Sin road, Shan Chang Dristrict, New Taipei City, TAIWAN, R.O.C tel fax internet Rev:D 11/11
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