Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 60 V V GS Gate to Source Voltage ±20 V

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1 FM865L N-Channel PowerTrench MOFET 6 V, A, 8. mω Features Max r (on) = 8. mω at V G = V, I = 3.5 A Max r (on) =.7 mω at V G =.5 V, I =.5 A Advanced package and silicon combination for low r (on) and high efficiency ML robust package design % UIL tested RoH Compliant General escription April This N-Channel MOFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of C/C converters using either synchronous or conventional switching PWM controllers.it has been optimized for low gate charge, low r (on), fast switching speed and body diode reverse recovery performance. Applications Primary witch in isolated C-C ynchronous Rectifier Load witch Top Bottom Pin 5 G G Power 56 8 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 6 V V G Gate to ource Voltage ± V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C I -Continuous (ilicon limited) T C = 5 C 7 -Continuous T A = 5 C (Note a) 3.5 A -Pulsed 6 E A ingle Pulse Avalanche Energy (Note 3) 9 mj Power issipation T C = 5 C 69 P Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case.8 R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM865L FM865L Power 56 3 mm 3 units Fairchild emiconductor Corporation

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 μa, V G = V 6 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 5 μa, referenced to 5 C 9 mv/ C I Zero Gate Voltage rain Current V = 8 V, V G = V μa I G Gate to ource Leakage Current V G = ± V, V = V ± na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 μa.8 3 V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics I = 5 μa, referenced to 5 C -7 mv/ C V G = V, I = 3.5 A V r (on) tatic rain to ource On Resistance G =.5 V, I =.5 A 9..7 mω V G = V, I = 3.5 A, T J = 5 C g F Forward Transconductance V = 5 V, I = 3.5 A 5 C iss Input Capacitance pf V = 3 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 5 5 pf R g Gate Resistance.6 Ω witching Characteristics t d(on) Turn-On elay Time 5 7 ns t r Rise Time V = 3 V, I = 3.5 A, 5.6 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 3 5 ns t f Fall Time 3. ns Q g Total Gate Charge V G = V to V 5 63 nc Q g Total Gate Charge V G = V to.5 V V = 3 V, 3 nc Q gs Gate to ource Charge I = 3.5 A 9.5 nc Q gd Gate to rain Miller Charge.7 nc rain-ource iode Characteristics V G = V, I =. A (Note ).7. V ource-rain iode Forward Voltage V V G = V, I = 3.5 A (Note ).83.3 t rr Reverse Recovery Time 37 6 ns I F = 3.5 A, di/dt = A/μs Q rr Reverse Recovery Charge 3 nc t rr Reverse Recovery Time 3 8 ns I F = 3.5 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, uty cycle <.%. 3. tarting T J = 5 C, L = mh, I A = 3.5 A, V = 5 V, V G = V. Fairchild emiconductor Corporation

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 8 μs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) Figure. I = 3.5 A V G = V V G = V V G =.5 V V G = V V G = 3.5 V V G = 3 V NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 8 μs V G =.5 V V G = V UTY CYCLE =.5% MAX I, RAIN CURRENT (A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 3 V I = 3.5 A V G = 3.5 V T J = 5 o C T J = 5 o C V G = V PULE URATION = 8 μs UTY CYCLE =.5% MAX 6 8 V G, GATE TO OURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C I, REVERE RAIN CURRENT (A).. V G = V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs ource Current Fairchild emiconductor Corporation 3

4 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) 8 6 I = 3.5 A Q g, GATE CHARGE (nc) 5 Figure 7. V = V V = 3 V V = V f = MHz V G = V. 6 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) 8 6 Limited by Package V G =.5 V V G = V R θjc =.8 o C/W C iss C oss C rss T C, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) THI AREA I LIMITE BY r (on) μs ms ms ms. INGLE PULE T J = MAX RATE s R θja = 5 o C/W s. T A = 5 o C C.. 3 V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation Fairchild emiconductor Corporation

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ECENING ORER = t, RECTANGULAR PULE URATION (sec) Figure 3. INGLE PULE R θja = 5 o C/W P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Junction-to-Ambient Transient Thermal Response Curve Fairchild emiconductor Corporation 5

6 imensional Outline and Pad Layout Fairchild emiconductor Corporation 6

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