2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
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1 YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green evice (Notes ) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note ) Mechanical ata Case: SOT Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-ST- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-, Method 8 e Terminal Connections: See iagram Weight:.9 grams (Approximate) rain SOT Gate Source G S Top View Equivalent Circuit Top View Ordering Information (Note ) Part Number Compliance Case Packaging -7-F Standard SOT,/Tape & Reel --F Standard SOT,/Tape & Reel Q-7-F Automotive SOT,/Tape & Reel Notes:. No purposely added lead. Fully EU irective /9/EC (RoHS) & //EU (RoHS ) compliant.. See for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds.. Automotive products are AEC-Q qualified and are PPAP capable. Automotive, AEC-Q and standard products are electrically and thermally the same, except where specified. For more information, please refer to For packaging details, go to our website at Marking Information K7 K7 = Product Type Marking Code YM = ate Code Marking Y or Y= Year (ex: E = 7) M = Month (ex: 9 = September) ate Code Key Year ~ Code N ~ E F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code O N of
2 Maximum Ratings A = + C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS V rain-gate Voltage R GS.M V GR V Gate-Source Voltage Continuous ± V Pulsed GSS ± V Continuous rain Current (Note ) V GS = V Continuous rain Current (Note 7) V GS = V Steady State Steady State T A = + C T A = +8 C T A = + C T A = + C T A = +8 C T A = + C Pulsed Continuous Maximum Continuous Body iode Forward Current (Note 7). I S A Pulsed rain Current (µs Pulse, uty Cycle = %) I M 8 ma I I 7 ma ma Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit (Note ) 7 Total Power issipation P mw (Note 7) (Note ) 8 Thermal Resistance, Junction to Ambient R (Note 7) θja C/W Thermal Resistance, Junction to Case (Note 7) R θjc 9 Operating and Storage Temperature Range T J, T STG - to + C Electrical Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) rain-source Breakdown Voltage BV SS 7 V V GS = V, I = µa Zero Gate Voltage rain T C = + C. I T C = + C µa V S = V, V GS = V Gate-Body Leakage I GSS ± na V GS = ±V, V S = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH).. V V S = V GS, I = µa Static rain-source T J = + T J = + T J = + C R S(ON) V GS =.V, I =.A V GS = V, I =.A V GS = V, I =.A On-State rain Current I (ON).. A V GS = V, V S = 7.V Forward Transconductance g FS 8 ms V S =V, I =.A iode Forward Voltage V S.78. V V GS = V, I S = ma YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss pf Reverse Transfer Capacitance C rss.. pf Gate Resistance R g Ω Total Gate Charge (V GS =.V) Q g Gate-Source Charge Q gs 8 Gate-rain Charge Q gd 78 SWITCHING CHARACTERISTICS (Note 9) Turn-On elay Time t (ON).8 Turn-On Rise Time t R. Turn-Off elay Time t (OFF) 7. Turn-Off Fall Time t F. pc ns V S = V, V GS = V f =.MHz V S = V, V GS = V, f =.MHz V S = V, I = ma V = V, I =.A, R L =, V GEN = V, R GEN = Notes:. evice mounted on FR- PCB, with minimum recommended pad layout. 7. evice mounted on x FR- PCB with high coverage oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. of
3 V GS, GATE SOURCE CURRENT (V) P d, POWER ISSIPATION (mw) R, STATIC RAIN-SOURCE S(ON) ON-RESISTANCE ( ) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE ( ) I, RAIN-SOURCE CURRENT (A) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE ( ) V S, RAIN-SOURCE VOLTAGE (V) Fig. On-Region Characteristics I, RAIN CURRENT (A) Fig. On-Resistance vs. rain Current. I = ma. I = ma. V GS = V, I = ma T j, JUNCTION TEMPERATURE ( C) Fig. On-Resistance vs. Junction Temperature I, RAIN CURRENT (A) Fig. Typical Transfer Characteristics 8 8 V GS, GATE TO SOURCE VOLTAGE (V) Fig. On-Resistance vs. Gate-Source Voltage 7 7 T A, AMBIENT TEMPERATURE ( C) Fig. Max Power issipation vs. Ambient Temperature of
4 Package Outline imensions Please see for the latest version. K C K B F H A G J M L All 7 GAUGE PLANE. a L SOT im Min Max Typ A.7.. B... C F... G H.8..9 J... K K.9.. L... L... M.8.. a 8 -- All imensions in mm Suggested Pad Layout Please see for the latest version. Y Y C imensions Value (in mm) C. X.8 X. Y.9 Y.9 X X of
5 IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 7, iodes Incorporated of
I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
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YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
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YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
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DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
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YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
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V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
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More informationistributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance
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YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
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