-6.0A -5.2A TSOT26 1. Top View Pin-Out. Part Number Case Packaging DMP2035UVT-7 TSOT26 3,000/Tape & Reel DMP2035UVT-13 TSOT26 10,000/Tape & Reel

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YM -2V P-HL HM MO MOSF Product Summary Features and Benefits BV SS -2V S(O) Max 35mΩ @ V S = -4.5V 45mΩ @ V S = -2.5V I = +25-6. -5.

reen evice (ote 3) Qualified to -Q Standards for High eliability escription and pplications Mechanical ata his MOSF is designed to minimize the on-state resistance ( S(O)) and yet maintain superior

1 YM -2V P-HL HM MO MOSF Product Summary Features and Benefits BV SS -2V S(O) Max V S = -4.5V V S = -2.5V I = Low Input apacitance Low On-esistance Fast Switching Speed S Protected up to 3kV otally Lead-Free & Fully ohs ompliant (otes & 2) Halogen and ntimony Free. reen evice (ote 3) Qualified to -Q Standards for High eliability escription and pplications Mechanical ata his MOSF is designed to minimize the on-state resistance ( S(O)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - onverters Motor ontrol Power Management Functions nalog Switch ase: SO26 ase Material: Molded Plastic, reen Molding ompound. UL Flammability lassification ating 94V- Moisture Sensitivity: Level per J-S-2 erminal onnections: See iagram erminals: Finish - Matte in nnealed over opper Leadframe; Solderable per MIL-S-22, Method 28 e3 Weight:.3 grams (pproximate) rain SO ate S PO O 3kV 3 4 S ate Protection iode Source op View op View Pin-Out quivalent ircuit Ordering Information (ote 4) Part umber ase Packaging -7 SO26 3,/ape & eel -3 SO26,/ape & eel otes:. o purposely added lead. Fully U irective 22/95/ (ohs) & 2/65/U (ohs 2) compliant. 2. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "reen" and Lead-free. 3. Halogen- and ntimony-free "reen products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + l) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information 2P 2P = Product ype Marking ode YM = ate ode Marking Y or Y = Year (ex: Y = 2) M = Month (ex: 9 = September) ate ode Key Year 2 ~ ode Y ~ F H I J Month Jan Feb Mar pr May Jun Jul ug Sep Oct ov ec ode O ocument number: S359 ev. 7-2 of 6 iodes Incorporated

2 Maximum atings = +25, unless otherwise specified.) haracteristic Symbol Value Unit rain-source Voltage V SS -2 V ate-source Voltage V SS ±2 V ontinuous rain urrent (ote 6) V S = -4.5V Steady = I State = t<s = I = ontinuous rain urrent (ote 6) V S = -2.5V Steady = I State = t<s = I = Maximum ontinuous Body iode Forward urrent (ote 6) I S -2. Pulsed rain urrent (µs Pulse, uty ycle = %) I M -24 hermal haracteristics (@ = +25, unless otherwise specified.) haracteristic Symbol Value Unit otal Power issipation (ote 5) P.2 W Steady State 6 hermal esistance, Junction to mbient (ote 5) J /W t<s 74 otal Power issipation (ote 6) P 2. W Steady State 65 hermal esistance, Junction to mbient (ote 6) t<s J 46 /W hermal esistance, Junction to ase (ote 6) Steady State J.8 Operating and Storage emperature ange J, S -55 to +5 lectrical haracteristics (@ = +25, unless otherwise specified.) haracteristic Symbol Min yp Max Unit est ondition OFF HISIS (ote 7) rain-source Breakdown Voltage BV SS -2 V V S = V, I = -25µ Zero ate Voltage rain urrent I SS - µ V S = -2V, V S = V ate-source Leakage I SS µ V S = 8V, V S = V O HISIS (ote7) ate hreshold Voltage V S(H) V V S = V S, I = -25µ ate hreshold Voltage emperature oefficient V S(H)/ J 2.5 mv/ I = -25µ,eferenced to V S = -4.5V, I = -4. Static rain-source On-esistance S(O) 3 45 mω V S = -2.5V, I = V S = -.8V, I = -2. Forward ransfer dmittance Y fs 8 S V S = -5V, I = -5.5 iode Forward Voltage (ote 6) V S V V S = V, I S = - YMI HISIS (ote 8) Input apacitance iss,6 2,4 V pf S = -V, V S = V Output apacitance oss 57 2 f =.MHz everse ransfer apacitance rss 45 2 ate esistance Ω V S = V, V S = V, f =.MHz otal ate harge Q g ate-source harge Q gs 2.5 n ate-rain harge Q gd 3.3 urn-on elay ime t (O) 7 33 urn-on ise ime t 2 9 urn-off elay ime t (OFF) 94 5 ns urn-off Fall ime t F everse ecovery ime t 4 25 ns everse ecovery harge Q 4 8 n otes: 5. evice mounted on F-4 substrate P board, 2oz copper, with minimum recommended pad layout. 6. evice mounted on F-4 substrate P board, 2oz copper, with inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. uaranteed by design. ot subject to product testing. V S = -V, V S = -4.5V I = -4 V S = -4.5V, V S = -V, = 6Ω, I = -, L = Ω I F =-4.5, di/dt=/µs ocument number: S359 ev of 6 iodes Incorporated

3 S(O), I-SOU O-SIS (ormalized) S(on), I-SOU O-SIS ( ) S(O),I-SOU O-SIS( ) S(O), I-SOU O-SIS( ) -I, I U () -I, I U () 25 V S = -8.V 2 ) ( U I, - I V S = -4.5V V S = -3.5V V S = -3.2V V S = -3.V V S = -2.5V V S = -2.V V S = -.5V 5 5 V S = -5.V = 5 = 25 = V S, I -SOU VOL (V) Fig. ypical Output haracteristics.7 = 25 = V S, -SOU VOL (V) Fig. 2 ypical ransfer haracteristics.5 V S = -4.5V.6.4 = = 25 = 85 = = I, I SOU U() Fig. 3 ypical On-esistance vs. rain urrent and ate Voltage I, I SOU U () Fig. 4 ypical On-esistance vs. rain urrent and emperature V S = -2. 5V I = V S = -4.5V I = J, JUIO MPU ( ) Fig. 5 On-esistance Variation with emperature J, JUIO MPU ( ) Fig. 6 On-esistance Variation with emperature ocument number: S359 ev of 6 iodes Incorporated

4 , JUIO PI (pf) -V S, -SOU VOL (V) V S(H), HSHOL VOL(V) -I S, SOU U () ) ( n U K L, -ISS, LK U (n) - I S , MBI MPU ( o 癈 ) ) Fig. 7 ate hreshold Variation vs. mbient emperature,, V S, I-SOU VOL (V) Fig. 9 ypical rain-source Leakage urrent vs. Voltage, = -55 = 5 = 25 = 85 = 25 ) n ( U K L, -ISS, LK U (n) - I S ,,, V S, SOU-I VOL (V) Fig. 8 iode Forward Voltage vs. urrent = 25 = -55 = 5 = 25 = V S, -SOU VOL (V) Fig. ypical ate-source Leakage urrent vs. Voltage f = MHz 8, iss 6 4 oss 2 rss V S, I-SOU VOL (V) Fig. ypical Junction apacitance Q g, OL H (n) Fig. 2 ate-harge haracteristics ocument number: S359 ev of 6 iodes Incorporated

5 r(t), SI HML SIS =.7 =.5 =.3. =. =.9 =.5 =.2. =. =.5 θj(t) J(t) = r(t)* = * θj J θj J = 88 = 88 o /W 癈 /W uty uty ycle, = t/t2 t2 Single Pulse......, t, PULS UIO IMS (sec) Fig. 3 ransient hermal esistance Package Outline imensions Please see for the latest version. SO26 e (4x) /2 e b /2 2 (4x) Seating Plane L c L2 auge Plane Seating Plane SO26 im Min Max yp BS b.3.45 c.2.2 e.95 BS e.9 BS L.3.5 L2.25 BS θ 8 4 θ 4 2 ll imensions in mm ocument number: S359 ev of 6 iodes Incorporated

6 Suggested Pad Layout Please see for the latest version. SO26 Y imensions Value (in mm).95 X.7 Y. Y 3.99 Y X IMPO OI IOS IOPO MKS O WY OF Y KI, XPSS O IMPLI, WIH S O HIS OUM, ILUI, BU O LIMI O, H IMPLI WIS OF MHBILIY FISS FO PIUL PUPOS ( HI QUIVLS U H LWS OF Y JUISIIO). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use iodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. his document is written in nglish but may be translated into multiple languages for reference. Only the nglish version of this document is the final and determinative format released by iodes Incorporated. LIF SUPPO iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief xecutive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, ustomers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. opyright 26, iodes Incorporated ocument number: S359 ev of 6 iodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT. Features -3.1A -2.0A. Pin Configuration

NOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT. Features -3.1A -2.0A. Pin Configuration YM O OMMDD FO W DSIG US DM253UV OMPLMY PI HM MOD MOSF Product Summary Device BV DSS DS(O) Q 2V Q2-2V Description = +25 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS = -.8V