Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units

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BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary

1 BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair Lead Free/RoHS ompliant (Note ) "Green" Device (Note and ) Qualified to AE-Q Standards for High Reliability Mechanical Data ase: SOT- ase Material: Molded Plastic. Green Molding ompound. UL Flammability lassification Rating - Moisture Sensitivity: Level per J-STD-D Terminals: Solderable per MIL-STD-, Method 8 Lead Free Plating (Matte Tin Finish annealed over Alloy leadframe). Terminal onnections: See Diagram Marking Information: See Page Ordering Information: See Page Weight:.8 grams (approximate) SOT- D G S Q Q TOP IEW S G D TOP IEW Internal Schematic Maximum Ratings Total A = unless otherwise specified haracteristic Symbol alue Units Power Dissipation (Note ) P D mw Thermal Resistance, Junction to Ambient R θja /W Operating and Storage Temperature Range T J, T STG - to + Maximum Ratings N-HANNEL Q, N A = unless otherwise specified haracteristic Symbol alue Units Drain-Source oltage DSS Drain-Gate oltage R GS.MΩ DGR Gate-Source oltage ontinuous ± Pulsed GSS ± Drain urrent (Note ) ontinuous Pulsed I D 8 ma Maximum Ratings P-HANNEL Q, BSS8 A = unless otherwise specified haracteristic Symbol alue Units Drain-Source oltage DSS - Drain-Gate oltage R GS KΩ DGR - Gate-Source oltage ontinuous GSS ± Drain urrent (Note ) ontinuous I D - ma. Device mounted on FR- PB, inch x.8 inch x. inch; pad layout as shown on Diodes Inc. suggested pad layout document AP, which can be found on our website at No purposefully added lead.. Diodes Inc.'s "Green" policy can be found on our website at Product manufactured with Date ode UO (week, ) and newer are built with Green Molding ompound. Product manufactured prior to Date ode UO are built with Non-Green Molding ompound and may contain Halogens or SbO Fire Retardants. BSS8DW Document number: DS8 Rev. - of June 8

2 BSS8DW Electrical haracteristics N-HANNEL Q, N A = unless otherwise specified haracteristic Symbol Min Typ Max Unit Test ondition OFF HARATERISTIS (Note ) Drain-Source Breakdown oltage B DSS GS =, I D = μa Zero Gate oltage Drain T T = I DSS. µa DS =, GS = Gate-Body Leakage I GSS ± na GS = ±, DS = ON HARATERISTIS (Note ) Gate Threshold oltage GS(th).. DS = GS, I D = μa Static Drain-Source T j = GS =., I D T j = R.. DS (ON) Ω.. GS =, I D =.A On-State Drain urrent I D(ON).. A GS =, DS =. Forward Transconductance g FS 8 ms DS =, I D =.A DYNAMI HARATERISTIS Input apacitance iss pf Output apacitance oss pf DS =, GS =, f =.MHz Reverse Transfer apacitance rss.. pf SWITHING HARATERISTIS Turn-On Delay Time t D(ON). ns Turn-Off Delay Time t D(OFF) ns DD =, I D =.A, R L = Ω, GEN =, R GEN = Ω Electrical haracteristics P-HANNEL Q, BSS8 T A = unless otherwise specified haracteristic Symbol Min Typ Max Unit Test ondition OFF HARATERISTIS (Note ) Drain-Source Breakdown oltage B DSS - GS =, I D = -µa Zero Gate oltage Drain urrent I DSS µa µa na DS = -, GS =, T J = DS = -, GS =, T J = DS = -, GS =, T J = Gate-Body Leakage I GSS ± na GS = ±, DS = ON HARATERISTIS (Note ) Gate Threshold oltage GS(th) DS = GS, I D = -ma Static Drain-Source On-Resistance R DS (ON) Ω GS = -, I D = -.A Forward Transconductance g FS. S DS = -, I D = -.A DYNAMI HARATERISTIS Input apacitance iss pf Output apacitance oss pf DS = -, GS =, f =.MHz Reverse Transfer apacitance rss pf SWITHING HARATERISTIS Turn-On Delay Time t D(ON) ns Turn-Off Delay Time t D(OFF) 8 ns. Short duration pulse test used to minimize self-heating effect. DD = -, I D = -.A, R GEN = Ω, GS = - BSS8DW Document number: DS8 Rev. - of June 8

3 BSS8DW N-HANNEL N SETION I, DRAIN-SOURE URRENT (A) D R DS(ON), STATI DRAIN-SOURE ON-RESISTANE ( Ω ) T j = DS, DRAIN-SOURE OLTAGE () Fig. On-Region haracteristics I D, DRAIN URRENT (A) Fig. On-Resistance vs. Drain urrent R DS(ON), STATI DRAIN-SOURE ON-RESISTANE ( Ω )... GS =, I D = ma R DS(ON), STATI DRAIN-SOURE ON-RESISTANE ( Ω ) T j, JUNTION TEMPERATURE ( ) Fig. On-Resistance vs. Junction Temperature 8 8 GS, GATE TO SOURE OLTAGE () Fig. On-Resistance vs. Gate-Source oltage = DS GS, GATE-SOURE URRENT () 8 P, POWER DISSIPATION (mw) d....8 I D, DRAIN URRENT (A) Fig. Typical Transfer haracteristics T A, AMBIENT TEMPERATURE ( ) Fig. Max Power Dissipation vs. Ambient Temperature BSS8DW Document number: DS8 Rev. - of June 8

4 BSS8DW P-HANNEL BSS8 SETION I D, DRAIN-SOURE URRENT (ma) R DS(ON), STATI DRAIN-SOURE ON-RESISTANE ( Ω ) T A = DS, DRAIN-SOURE () Fig. Drain-Source urrent vs. Drain-Source oltage 8. T A = T A = GS, GATE TO SOURE () Fig. On-Resistance vs. Gate-Source oltage I D, DRAIN URRENT (A) R DS, ON-RESISTANE ( Ω ) GS, GATE-TO-SOURE OLTAGE () Fig. 8 Drain urrent vs. Gate-Source oltage GS = - I D = -.A - - T J, JUNTION TEMPERATURE ( ) Fig. On-Resistance vs. Junction Temperature R DS, ON-RESISTANE ( Ω ).... = - GS = - GS = -. GS = - GS = - GS = -8 GS = - GS I D, DRAIN URRENT (A) Fig. On-Resistance vs. Drain urrent BSS8DW Document number: DS8 Rev. - of June 8

5 BSS8DW Ordering Information (Note ) Part Number ase Packaging BSS8DW--F SOT- /Tape & Reel. For packaging details, go to our website at Marking Information KNP YM KNP = Product Type Marking ode YM = Date ode Marking Y = Year (ex: R = ) M = Month (ex: = September) Date ode Key Year 8 ode P R S T U W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode 8 O N D Package Outline Dimensions A K J H D F B L M SOT- Dim Min Max A.. B.... D. Nominal F.. H.8. J. K.. L.. M.. α 8 All Dimensions in mm Suggested Pad Layout Z G E E Dimensions alue (in mm) Z. G. X. Y.. E. Y X IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS8DW Document number: DS8 Rev. - of June 8

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary