M C C. MCB150N06YB. Field Effect Transistor. Features. N-Channel Enhancement Mode D 2 -PACK. Internal Block Diagram

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1 20736 Marilla Street Chatsworth CA Phone:(818) Fax: (818) MCB150N06YB Features High density cell design for ultra low dson Fully characterized avalanche voltage and current Halogen free available upon request by adding suffix "-HF" Good stability and uniformity with high E AS Excellent package for good heat dissipation Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Maximum 25 O C Unless Otherwise Specified N-Channel Enhancement Mode Field Effect Transistor D 2 -PACK Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum 60 ±20 Units V V Continuous Drain T C =25 C 150 I D Current C T C =100 C 105 A Pulsed Drain Current B Avalanche energy L=0.5mH B I DM E AS A mj Power Dissipation A T C =25 C 187 P DSM T C =100 C 94 W Junction and Storage Temperature ange T J, T STG -55 to 175 C Thermal Characteristics Parameter Symbol Maximum Maximum Junction-to-Case Steady-State θjc Units C/W D H G S A 4 B V C Internal Block Diagram J K E D 1.GATE 2.DAIN 3.SOUCE G S DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A B C D E G H J K S V NOTE SUGGESTED SOLDE PAD LAYOUT Inches mm evision: A 1 of /02/01

2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PAAMETES BV DSS Drain-Source Breakdown Voltage I D =250 A, V GS =0V 60 V I DSS V DS =60V, V GS =0V 1 Zero Gate Voltage Drain Current A T J =55 C 5 I GSS Gate-Body leakage current V DS =0V, V GS =±20V ±100 na V GS(th) Gate Threshold Voltage V DS =V GS, I D =250 A V DS(ON) V GS =10V, I D =50A Static Drain-Source On-esistance m T J =125 C g FS Diode Forward Voltage V DS =5V, I D =50A 80 S V SD Diode Forward Voltage I S =50A,V GS =0V V I S Maximum Body-Diode Continuous Current C 150 A DYNAMIC PAAMETES C iss Input Capacitance 3800 pf C oss Output Capacitance V GS =0V, V DS =30V, f=1mhz 430 pf C rss everse Transfer Capacitance 190 pf g Gate resistance V GS =0V, V DS =0V, f=1mhz 2.6 SWITCHING PAAMETES Q g Total Gate Charge 69 nc Q gs Gate Source Charge V GS =10V, V DS =30V, I D =50A 33 nc Q gd Gate Drain Charge 15 nc t D(on) Turn-on Delay Time 18 ns t r Turn-on ise Time V GS =10V, V DS =30V, L =2.5Ω, 35 ns t D(off) Turn-off Delay Time GEN =3Ω 44 ns t f Turn-off Fall Time 23 ns t rr Body Diode everse ecovery Time I F =50A,di/dt=500A/us 53 ns Q rr Body Diode everse ecovery charge I F =50A,di/dt=500A/us 98 nc A. The value of θja is measured with the device mounted on 1in2 F 4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on θja t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. Single pulse width limited by junction temperature TJ(MAX)=175 C. C. The maximum current rating is package limited. 2 of 6 evision: A 2017/02/01

3 Typical Characteristics Fig 1: Output Charac acte teristi tics Fig 2: Transfe ansfer Characte acteristi stics Fig 3: ds(o (on) vs Drai ain Current and Gate Voltage Fig 4: ds(o (on) vs Gate Voltage Fig 5: ds(on) vs. Temperature Fig 6: Capacitance Characteristics 3 of 6 evision: A 2017/02/01

4 Fig 7: Gate Charge Charac acte teristi tics Fig 8: Body-di dy-diode de Forwar ard Characteristics Fig 9: Powe wer Dissipati pation Fig 10: Drain Current Derati ating Power Dissipation (W) ID(A) Tc - Case Temperature ( C) Fig 11: Safe Operating Area Tc - Case Temperature ( C) 4 of 6 evision: A 2017/02/01

5 Fig 12: Max. Transient Thermal Impedance 5 of 6 evision: A 2017/02/01

6 Ordering Information : Device Part Number-TP Part Number-BP Packing Tape&eel: 800pcs/eel Tube: 5Kpcs/Ctn Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF ***IMPOTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPOT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOME AWAENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 6 of 6 evision: A 2017/02/01