AP4604P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 P6P Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS V Ultra-low On-resistance R DS(ON) 37mΩ 3 Fast Switching Characteristic I D 1 G RoHS Compliant & Halogen-Free S Description P6 series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO- package is widely preferred for all commercial- G D S TO-(P) industrial through hole applications The low thermal resistance and low package cost contribute to the worldwide popular package bsolute Maximum Ratings@T j =5 o C(unless otherwise specified) V DS V GS Symbol Parameter I C =5 I C =5 I C =1 I DM Rating Drain-Source Voltage Gate-Source Voltage + Drain Current (Chip) 1 Drain Current, V 1V 3 8 Drain Current, V 1V 3 8 Pulsed Drain Current 1 P C =5 Total Power Dissipation 15 P =5 Total Power Dissipation T STG Storage Temperature Range -55 to 175 T J Operating Junction Temperature Range -55 to 175 Units V V W W Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 6 /W Data and specifications subject to change without notice

2 P6P Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =5u - - V R DS(ON) Static Drain-Source On-Resistance V GS =1V, I D = mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - V g fs Forward Transconductance V DS =1V, I D = S I DSS Drain-Source Leakage Current V DS =3V, V GS =V u I GSS Gate-Source Leakage V GS = +V, V DS =V n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =3V nc Q gd Gate-Drain ("Miller") Charge V GS =1V - - nc t d(on) Turn-on Delay Time V DS =V - - ns t r Rise Time I D = ns t d(off) Turn-off Delay Time R G =33Ω ns t f Fall Time V GS =1V ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =5V pf C rss Reverse Transfer Capacitance f=1mhz pf R g Gate Resistance f=1mhz Ω Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage I S =, V GS =V V t rr Reverse Recovery Time I S =, V GS =V - - ns Q rr Reverse Recovery Charge di/dt=1/µs nc Notes: 1Pulse width limited by Max junction temperature Pulse test 3Package limitation current is 8 THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN

3 P6P 3 T C =5 o C 1V 9V 8V 7V 6V T C = 175 o C 1V 9V 8V 7V 6V V G =5V 1 V G =5V V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1 Typical Output Characteristics Fig Typical Output Characteristics 1 8 I D = T C =5 o C I D = V G =1V 8 R DS(ON) (mω) 6 Normalized R DS(ON) V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3 On-Resistance vs Gate Voltage Fig Normalized On-Resistance vs Junction Temperature I D =1m 16 I S () 3 T j =175 o C T j =5 o C Normalized V GS(th) V SD, Source-to-Drain Voltage (V) T j,junction Temperature ( o C) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3

4 P6P V GS, Gate to Source Voltage (V) I D = V DS =3V C (pf) f=1mhz C iss C oss C rss Q G, Total Gate Charge (nc) V DS,Drain-to-Source Voltage (V) Fig 7 Gate Charge Characteristics Fig 8 Typical Capacitance Characteristics 1 1 I D () Operation in this area limited by R DS(ON) T C =5 o C Single Pulse 1us 1ms 1ms 1ms DC Normalized Thermal Response (R thjc ) 1 Duty factor= Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C V DS, Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig 1 Effective Transient Thermal Impedance 16 V DS =5V Limited by package 1 8 T j =175 o C T j =5 o C T j = -55 o C T C, Case Temperature ( o C ) V GS, Gate-to-Source Voltage (V) Fig 11 Drain Current vs Case Fig 1 Transfer Characteristics Temperature

5 P6P I D =1m Normalized BV DSS 1 8 P D, Power Dissipation(W) T j, Junction Temperature ( o C) T C, Case Temperature( o C) Fig 13 Normalized BV DSS vs Junction Fig 1 Total Power Dissipation 16 T j =5 o C 1 R DS(ON) (mω) 8 V GS =5V V GS =6V V GS =1V Fig 15 Typ Drain-Source on State Resistance 5

6 P6P MRKING INFORMTION Part Number 6 YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 6