Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel

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BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.

1 BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 V = 1V 5mA V = 4.5V 45mA This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting D-D onverters Power Management Functions Low On-Resistance Low Input apacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AE-Q11 Standards for High Reliability PPAP apable (Note 4) Mechanical Data ase: SOT23 ase Material: Molded Plastic Green Molding ompound. UL Flammability lassification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-22, Method 28 e3 Terminal onnections: See Diagram Weight:.8 grams (approximate) SOT23 Drain D Gate Source G S Top View Equivalent ircuit Top View Ordering Information (Note 5) Part Number Qualification ase Packaging BSN2-7 Standard SOT23 3/Tape & Reel BSN2Q-7 Automotive SOT23 3/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 22/95/E (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + l) and <1ppm antimony compounds. 4. Automotive products are AE-Q11 qualified and are PPAP capable. Automotive, AE-Q11 and standard products are electrically and thermally the same, except where specified. For more information, please refer to 5. For packaging details, go to our website at Marking Information N2 YM N2 YM N2 = Product Type Marking ode YM = Date ode Marking for SAT (Shanghai Assembly/ Test site) YM = Date ode Marking for AT (hengdu Assembly/ Test site) Y or Y = Year (ex: A = 213) M = Month (ex: 9 = September) Date ode Key hengdu A/T Site Shanghai A/T Site Year ode W X Y Z A B Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D BSN2 1 of 6 September 213

2 BSN2 Maximum Ratings A = +25, unless otherwise specified.) haracteristic Symbol Value Units Drain-Source Voltage V DSS 5 V Gate-Source Voltage V S 2 V ontinuous Drain T SP = +25 (Note 6) Steady State T A = +25 T A = +1 Pulsed Drain T SP = +25 (Notes 6 & 7) I DM 1.2 A I D 5 3 ma NEW PRODUT Thermal haracteristics haracteristic Symbol Value Units Power A = +25 (Note 6) P D 6 mw Thermal Resistance, Junction to A = +25 (Note 6) R JA 2 /W Power SP = +25 (Note 6) P D 92 mw Thermal SP = +25 (Note 6) R JSP 136 /W Operating and Storage Temperature Range T J, T STG -55 to +15. Electrical haracteristics (@T A = +25, unless otherwise specified.) haracteristic Symbol Min Typ Max Unit Test ondition OFF HARATERISTIS (Note 8) Drain-Source Breakdown Voltage BV DSS 5 V V = V, I D = 25µA Zero Gate Voltage Drain urrent T J = +25 I DSS.5 µa V DS = 5V, V = V Gate-Body Leakage I S 1 na V = 2V, V DS = V ON HARATERISTIS (Note 8) Gate Threshold Voltage V (th) V V DS = V, I D = 25µA Static Drain-Source On-Resistance R DS(ON) V = 1V, I D =.22A V = 4.5V, I D =.1A Forward Transfer Admittance Y fs 4 32 ms V DS = 1V, I D =.1A Diode Forward Voltage V SD V V = V, I S = 18mA Source (diode forward) urrent I S 194 ma T SP = +25 Peak Source (diode forward) urrent I SM 1.2 A T SP = +25 (Notes 3 & 4) DYNAMI HARATERISTIS (Note 9) Input apacitance iss pf Output apacitance oss pf V DS = 1V, V = V, f = 1.MHz Reverse Transfer apacitance rss pf Gate Resistance R g 49 V DS =V, V = V, f = 1MHz Total Gate harge Q g 8 p V = 1V, V DD = 25V, Gate-Source harge Q gs 1 p I D = 25mA Gate-Drain harge Q gd 1 p Turn-On Delay Time t D(on) 2.93 ns V DD = 3V, V GEN = 1V, Turn-On Rise Time t r 2.99 ns R L = 15, R GEN = 5, Turn-Off Delay Time t D(off) 9.45 ns I D =.2A Turn-Off Fall Time t f 8.3 ns Notes: 6. Device mounted on FR-4 PB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. BSN2 2 of 6 September 213

3 BSN2 NEW PRODUT P D, POWER DISSIPATION (%) T S, SOLDER POINT TEMPERATURE ( ) Fig 1. Normalized Total Power Dissipation as a Function of Solder Point Temperature 1 I DER, NORMALIZED ONTINUOUS URRENT (%) T S, SOLDER POINT TEMPERATURE ( ) Fig 2. Normalized ontinuous urrent vs. Solder Point Temperature R ds(on) Limited I D, DRAIN URRENT (A).1.1 P W = D P W = 1s P W = 1s P W = 1ms P W = 1ms P W = 1ms P W = 1µs P W = 1µs T J(MAX) = 15 T A = 25 Single Pulse V DS, DRAIN-SOURE VOLTAGE (V) Fig. 3 SOA, Safe Operation Area Z th(j-sp), TRANSIENT THERMAL RESISTANE ( /W) 1, 1 1 D =.5 D =.3 D =.1 D =.5 D =.2 Duty ycle, D = t /t 1 2 D = Single Pulse t 1, PULSE DURATION TIME (s) Fig. 4 Transient Thermal Response BSN2 3 of 6 September 213

4 BSN2.7.8 NEW PRODUT I D, DRAIN-SOURE URRENT (A) R DS(ON), DRAIN-SOURE ON-RESISTANE ( ) V = 1V V = 4.V V = 3.V V = 4.5V V DS, DRAIN-SOURE VOLTAGE (V) Fig. 5 Drain-Source urrent vs. Drain-Source Voltage V = 3.5V V = 4. V V = 4.5V V = 1V I D, DRAIN-URRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-urrent R DS(ON), DRAIN-SOURE ON-RESISTANE ( ) I D, DRAIN-SOURE URRENT (A) V = 5V DS V, GATE-SOURE VOLTAGE (V) Fig. 6 Transfer haracteristics V = 1V I D = 5mA V = 4.5V I D = 2mA T J, JUNTION TEMPERATURE ( ) Fig. 8 Drain-Source On-Resistance vs. Junction Temperature V (TH), GATE THRESHOLD VOLTAGE (V) I D = 25µ A I = 1.mA D T J, JUNTION TEMPERATURE ( ) Fig. 9 Gate Threshold Voltage vs. Junction Temperature I D, DRAIN-SOURE URRENT (A) V, GATE-SOURE VOLTAGE (V) Fig. 1 Transfer haracteristics BSN2 4 of 6 September 213

5 AlGALANEBSN2.8 4 NEW PRODUT g fs, FORWARD TRANSONDUTANE (s) I D, DRAIN-URRENT (A) Fig. 11 Typical Transfer haracteristic 1..9, APAITANE (pf) iss oss rss V DS, DRAIN-SOURE VOLTAGE (V) Fig. 12 apacitance vs. Drain-Source Voltage I, S SOURE URRENT (A) V SD, DIODE FORWARD VOLTAGE (V) Fig. 13 Source urrent vs. Diode Forward Voltage Package Outline Dimensions Please see AP22 at for latest version. 7 HP5JKK1UGE.2aMALL1BDGFSOT23 Dim Min Max Typ A B D F G H J K K L L M All Dimensions in mm BSN2 5 of 6 September 213

6 BSN2 Suggested Pad Layout Please see AP21 at for latest version. NEW PRODUT Z Y X E IMPORTANT NOTIE Dimensions Value (in mm) Z 2.9 X.8 Y.9 2. E 1.35 DIODES INORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOUMENT, INLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERHANTABILITY AND FITNESS FOR A PARTIULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDITION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. opyright 213, Diodes Incorporated BSN2 6 of 6 September 213

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and