Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel

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N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high

1 N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Applications Motor Control Backlighting C-C Converters Power Management Functions Features Low nput Capacitance High BV SS Rating for Power Application Low nput/output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. reen evice (Note 3) Mechanical ata Case: Case Material: Molded Plastic reen Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-ST-2 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per ML-ST-22, Method 28 e3 Terminal Connections: See iagram Weight:.8 grams (Approximate) S S ES PROTECTE Top View Ordering nformation (Note 4) Part Number Case Packaging -7 3/Tape & Reel -3 /Tape & Reel Notes:. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. 2. See for more information about iodes ncorporated s definitions of Halogen- and Antimony-free, "reen" and Lead-free. 3. Halogen- and Antimony-free "reen products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking nformation K3 K3 = Product Type Marking Code YM or YM= ate Code Marking Y or Y = Year (ex: E = 27) M = Month (ex: 9 = September) ate Code Key Year Code E F H J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code O N ocument number: S39475 Rev. 3-2 of 7 iodes ncorporated

2 Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 6 V ate-source Voltage V SS ±2 V Continuous rain Current (Note 5) V S = V 7 T A = +7 C 56 Continuous rain Current (Note 6) V S = V T A = +7 C 7 Continuous rain Current (Note 5) V S = 4.5V T A = +7 C 32 Continuous rain Current (Note 6) V S = 4.5V 5 T A = +7 C Pulsed rain T SP = +25 C (Note 7) M.2 A Thermal Characteristics Characteristic Symbol Value Unit Power A = +25 C (Note 5) P.7 W Thermal Resistance, Junction to T A = +25 C (Note 5) R θja 74 C/W Power A = +25 C (Note 6) P. W Thermal Resistance, Junction to T A = +25 C (Note 6) R θja 99 C/W Operating and Storage Temperature Range T J, T ST -55 to +5 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERSTCS (Note 8) rain-source Breakdown Voltage BV SS 6 V V S = V, = 25µA Zero ate Voltage rain Current T J = +25 C SS µa V S = 6V, V S = V ate-body Leakage SS ± µa V S = ±2V, V S = V ON CHARACTERSTCS (Note 8) ate Threshold Voltage V S(TH).5 3. V V S = V S, = 25µA V V S = V S, = 8µA Static rain-source On-Resistance R S(ON) 67 V S = V, = 6 Ω V S = 4.5V, = 6 Forward Transfer Admittance Y fs 76 ms V S = V, = 6 iode Forward Voltage V S.5 V V S = V, S = 5 YNAMC CHARACTERSTCS (Note 9) nput Capacitance C iss 25 Output Capacitance C oss 5.2 pf V S = 25V, V S = V, f =.MHz Reverse Transfer Capacitance C rss.4 Total ate Charge Q g.7 V nc S = V, V = 3V, ate-source Charge Q gs.3 =.A ate-rain Charge Q gd.9 Turn-On elay Time t (ON) 7 ns V = 3V, V S = V, Turn-On Rise Time t R ns R EN = 3.3Ω, Turn-Off elay Time t (OFF) 2 ns = 6 Turn-Off Fall Time t F 58 ns Reverse Recovery Time t RR 89. ns V R =3V, F =.6A, Reverse Recovery Charge Q RR 32 nc di/dt = A/µs Notes: 5. evice mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. evice mounted on x FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, µs pulse, duty cycle = %. 8. Short duration pulse test used to minimize self-heating effect. 9. uaranteed by design. Not subject to production testing. ocument number: S39475 Rev of 7 iodes ncorporated

3 R S(ON), RAN-SOURCE ON-RESSTANCE R S(ON), RAN-SOURCE ON-RESSTANCE (NORMALZE) R S(ON), RAN-SOURCE ON-RESSTANCE R S(ON), RAN-SOURCE ON-RESSTANCE, RAN CURRENT (A), RAN CURRENT (A) V S = 6.V V S = 8.V V S =.V V S = 3.5V V S =4.V V S = 4.5V V S = 5.V V S = 3.3V. V S = V T J = V S = 3.2V V S = 3.V V S = 2.9V V S, RAN-SOURCE VOLTAE (V) Figure. Typical Output Characteristic.. T J =25 T J =85 T J =25 T J = V S, ATE-SOURCE VOLTAE (V) Figure 2. Typical Transfer Characteristic V S = V 2 = , RAN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and ate Voltage V S, ATE-SOURCE VOLTAE (V) Figure 4. Typical Transfer Characteristic V S = V T J =5 T J =25 T J =85 T J =25 T J = , RAN CURRENT (A) Figure 5. Typical On-Resistance vs. rain Current and Temperature V S = V, = 6.5 V S = 4.5V, = T J, JUNCTON TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature ocument number: S39475 Rev of 7 iodes ncorporated

4 V S (V), RAN CURRENT (A) S, SOURCE CURRENT (A) C T, JUNCTON CAPACTANCE (pf) R S(ON), RAN-SOURCE ON-RESSTANCE V S(TH), ATE THRESHOL VOLTAE (V) V S = 4.5V, = 6 6 V S = V, = T J, JUNCTON TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature = 25μA = T J, JUNCTON TEMPERATURE ( ) Figure 8. ate Threshold Variation vs. Junction Temperature. V S = V f=mhz C iss. T J = 25 o C T J = 85 o C T J = 25 o C C oss T J = 5 o C T J = -55 o C C rss V S, SOURCE-RAN VOLTAE (V) Figure 9. iode Forward Voltage vs. Current V S, RAN-SOURCE VOLTAE (V) Figure. Typical Junction Capacitance R S(ON) Limited P W =µs V S = 3V, = Qg (nc)... P W =ms P W =ms P W =ms T J(Max) = 5 T C = 25 Single Pulse UT on *MRP Board V S = V P W =s P W =s C V S, RAN-SOURCE VOLTAE (V) Figure. ate Charge Figure 2. SOA, Safe Operation Area ocument number: S39475 Rev of 7 iodes ncorporated

5 r(t), TRANSENT THERMAL RESSTANCE. =.7 =.5 =.3 =. =.5 =.9. =. =.5 =.2. =Single Pulse R θja (t) = r(t) * R θja R θja = 74 /W uty Cycle, = t / t2 E t, PULSE URATON TME (sec) Figure 3. Transient Thermal Resistance ocument number: S39475 Rev of 7 iodes ncorporated

6 Package Outline imensions Please see for the latest version. K C K B H A J M L All 7 AUE PLANE.25 a L im Min Max Typ A B.2..3 C F H J.3..5 K K L L M a 8 -- All imensions in mm F Suggested Pad Layout Please see for the latest version. Y Y C imensions Value (in mm) C 2. X.8 X.35 Y.9 Y 2.9 X X ocument number: S39475 Rev of 7 iodes ncorporated

7 MPORTANT NOTCE OES NCORPORATE MAKES NO WARRANTY OF ANY KN, EXPRESS OR MPLE, WTH REARS TO THS OCUMENT, NCLUN, BUT NOT LMTE TO, THE MPLE WARRANTES OF MERCHANTABLTY AN FTNESS FOR A PARTCULAR PURPOSE (AN THER EQUVALENTS UNER THE LAWS OF ANY JURSCTON). iodes ncorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes ncorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes ncorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes ncorporated and all the companies whose products are represented on iodes ncorporated website, harmless against all damages. iodes ncorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes ncorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes ncorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United s, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United s, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes ncorporated. LFE SUPPORT iodes ncorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes ncorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes ncorporated. Further, Customers must fully indemnify iodes ncorporated and its representatives against any damages arising out of the use of iodes ncorporated products in such safety-critical, life support devices or systems. Copyright 27, iodes ncorporated ocument number: S39475 Rev of 7 iodes ncorporated

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state