Green -14.5A. Pin1. Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI ,500 / Tape & Reel
|
|
- Ernest Stafford
- 6 years ago
- Views:
Transcription
1 reen MP45P 4V P-HNNEL ENHNEMENT MOE MOFET POWERI Product ummary Features and Benefits NEW PROUT V (BR) -4V escription R (on) max I T = +25 V = -V -7 V = -4.5V -4.5 This new generation MOFET has been designed to minimize the onstate resistance (R (on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications - onverters Power management functions nalog witch % Unclamped Inductive witch (UI) Test In Production Low On-Resistance Fast witching peed Lead-Free Finish; RoH ompliant (Notes & 2) Halogen and ntimony Free. reen evice (Note 3) Qualified to E-Q tandards for High Reliability Mechanical ata ase: POWERI 56-8 ase Material: Molded Plastic, reen Molding ompound. UL Flammability lassification Rating 94V- Moisture ensitivity: Level per J-T-2 Terminal onnections: ee iagram Terminals: Finish % matte Tin annealed over opper leadframe. olderable per MIL-T-22, Method 28 Weight:.97 grams (approximate) Pin Top View Top View Bottom View Pin onfiguration Internal chematic Ordering Information (Note 4) Part Number ompliance ase Packaging MP45P-3 tandard POWERI ,5 / Tape & Reel Notes:. EU irective 22/95/E (RoH) & 2/65/EU (RoH 2) compliant. ll applicable RoH exemptions applied. 2. ee for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "reen" and Lead-free. 3. Halogen- and ntimony-free "reen products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + l) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information P45P YY WW = Manufacturer s Marking P45P = Product Type Marking ode YYWW = ate ode Marking YY = Year (ex: 3 = 23) WW = Week ( - 53) POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev. - 2 of 6 ecember 23 iodes Incorporated
2 MP45P Maximum Ratings = +25, unless otherwise specified.) NEW PROUT haracteristic ymbol Value Units rain-ource Voltage V -4 V ate-ource Voltage V ±25 V ontinuous rain urrent (Note 5) V = -V teady T = I tate T = T t<s = I T = ontinuous rain urrent (Note 6) V = -V teady T = I tate T = T t<s = I T = Pulsed rain urrent (μs pulse, duty cycle = %) I M - Maximum Body iode ontinuous urrent (Note 6) I -3.5 valanche urrent (Note 7) I -22 valanche Energy (Note 7) E 242 mj Thermal haracteristics (@T = +25, unless otherwise specified.) haracteristic ymbol Value Units Total Power issipation (Note 5) T = P T = +7.8 W Thermal Resistance, Junction to mbient (Note 5) teady state 96.4 /W R t<s θj 4.6 /W Total Power issipation (Note 6) T = P T = +7.4 W Thermal Resistance, Junction to mbient (Note 6) teady state 55 /W R t<s θj 24 /W Thermal Resistance, Junction to ase (Note 6) R θj 4.5 /W Operating and torage Temperature Range T J, T T -55 to +5 Electrical haracteristics (@T = +25, unless otherwise specified.) haracteristic ymbol Min Typ Max Unit Test ondition OFF HRTERITI (Note 8) rain-ource Breakdown Voltage BV -4 V V = V, I = -25μ Zero ate Voltage rain urrent I - µ V = -4V, V = V ate-ource Leakage I ± n V = ±25V, V = V ON HRTERITI (Note 8) ate Threshold Voltage V (th) V V = V, I = -25μ tatic rain-ource On-Resistance R (ON) 7 V = -V, I = -9.8 mω 9 5 V = -4.5V, I = -9.8 Forward Transfer dmittance Y fs 26 V = -2V, I = -9.8 iode Forward Voltage V V V = V, I = - YNMI HRTERITI (Note 9) Input apacitance iss 4234 V pf = -2V, V = V Output apacitance oss 36 f = MHz Reverse Transfer apacitance rss 526 ate Resistance R 7.77 Ω V = V, V = V, f = MHz Total ate harge Q g 47.5 V n = -2V, V = -5V ate-ource harge Q gs 4.2 I = -9.8 ate-rain harge Q gd 3.5 Turn-On elay Time t (on) 3.2 Turn-On Rise Time t r Turn-Off elay Time t (off) 32.7 Turn-Off Fall Time t f 37.9 Notes: 5. evice mounted on FR-4 P board, with minimum recommended pad layout, single sided. 6. evice mounted on FR-4 substrate P board, 2oz copper, with thermal bias to bottom layer inch square copper plate 7. UI in production with L =.mh, TJ = hort duration pulse test used to minimize self-heating effect. 9. uaranteed by design. Not subject to production testing. ns V = -V, V = -2V, R = 6Ω, I = -, R L = 2Ω POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev of 6 ecember 23 iodes Incorporated
3 MP45P V =4.V -V =3.5V 25 NEW PROUT -I, RIN URRENT () V =4.5V -V =V -V =3.V V, RIN -OURE VOLTE(V) Fig. Typical Output haracteristics -I, RIN URRENT () V, TE-OURE VOLTE (V) Fig. 2 Typical Transfer haracteristics R (ON),RIN-OURE ON-REITNE( Ω ) I, RIN OURE URRENT Fig. 3 Typical On-Resistance vs. rain urrent and ate Voltage R (ON), RIN-OURE ON-REITNE( Ω ) V = 4.5V T = 25 T = 85 T = 5 T = 25 T = I, RIN OURE URRENT () Fig. 4 Typical On-Resistance vs. rain urrent and Temperature R (ON), RIN-OURE ON-REITNE (Normalized) T J, JUNTION TEMPERTURE ( ) Fig. 5 On-Resistance Variation with Temperature POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev. - 2 R (ON), RIN-OURE ON-REITNE ( Ω ) 3 of V = 4.5V -I = 5. V = V I = T J, JUNTION TEMPERTURE ( ) Fig. 6 On-Resistance Variation with Temperature ecember 23 iodes Incorporated
4 MP45P NEW PROUT -V (TH), TE THREHOL VOLTE (V) T, MBIENT TEMPERTURE ( ) Fig. 7 ate Threshold Variation vs. mbient Temperature -I, OURE URRENT () V, OURE-RIN VOLTE (V) Fig. 8 iode Forward Voltage vs. urrent f = MHz T =5 T, JUNTION PITNE (pf) R I O -I, LEKE URRENT (n) T =25 T =85 T = V, RIN-OURE VOLTE (V) Fig. 9 Typical Junction apacitance V, RIN-OURE VOLTE(V) Fig. Typical rain-ource Leakage urrent vs. Voltage V, TE-OURE VOLTE (V) E, VLNHE ENERY (mj) tarting Temperature (T ) = 25 J E I I,VLNHE URRENT () Q g, TOTL TE HRE (n) Fig. ate-harge haracteristics INUTOR (mh) Fig. 2 ingle-pulse valanche Tested POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev of 6 ecember 23 iodes Incorporated
5 MP45P NEW PROUT r(t), TRNIENT THERML REITNE =.7 =.5 =.3. =. =.5 =.2. =. =.5 =.9 R θj(t) = r(t) * Rθ J R θj = 97 /W t 2 T J - T = P * R θj(t) uty ycle, = t /t2 UT mounted on FR-4 PB with = ingle Pulse minimum recommended pad layout...., t, PULE URTION TIME (s) Fig. 3 Transient Thermal Response P(pk) t Package Outline imensions Please see P22 at for latest version. E E etail etail O (4X) c e O (4X) b (8X) e/2 L b2 (4X) 3 K E3 E2 2 b3 (4X) M M L POWERI56-8 im Min Max Typ b b b c B E 6.5 B E E E e.27 B K.5 L L M M..4.2 Θ º 2º º Θ 6º 8º 7º ll imensions in mm POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev of 6 ecember 23 iodes Incorporated
6 Y2X3Y3Y5X()YX2Y4MP45P NEW PROUT uggested Pad Layout Please see P2 at for the latest version. X47Y6Y4xXYimensions Value (in mm) X.6 X 4. X2.755 X Y7 6.6 X4 5.6 Y.27 Y.6 Y2.2 Y3.295 Y4.825 Y5 3.8 Y6.8 IMPORTNT NOTIE IOE INORPORTE MKE NO WRRNTY OF NY KIN, EXPRE OR IMPLIE, WITH RER TO THI OUMENT, INLUIN, BUT NOT LIMITE TO, THE IMPLIE WRRNTIE OF MERHNTBILITY N FITNE FOR PRTIULR PURPOE (N THEIR EQUIVLENT UNER THE LW OF NY JURIITION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould ustomers purchase or use iodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United tates, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United tates, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE UPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, ustomers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. opyright 23, iodes Incorporated POWERI is a registered trademark of iodes Incorporated MP45P ocument number: 3558 Rev of 6 ecember 23 iodes Incorporated
DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
Green MP45SK3 P-HNNEL ENHNEMENT MOE MOSFET Product Summary V (BR)SS -4V escription R S(on) max I T = +25 mω @ V = -V -35 5mΩ @ V = -4.5V -3 This new generation MOSFET has been designed to minimize the
More informationGate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
More informationS S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOFET Product ummary BV 3V R (ON) max I max T C = +25 C 2mΩ @ V G = 4.5V 25mΩ @ V G = 2.5V 14 escription and pplications This MOFET is designed to minimize the on-state resistance
More informationGreen. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
More information34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
More informationDMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)
YYWW VNE INFORMTION OMPLEMENTRY PIR ENHNEMENT MOE MOSFET PowerI Product Summary evice V (BR)SS R S(ON) Max Q 3V Q -3V escription mω @ V = V 7mΩ @ V = 4.V I Max T = + 8 mω @ V = -V - 38mΩ @ V = -4.V - This
More informationTop View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
More informationGreen. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel
Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It
More informationGreen. Pin 1 1 S S S G 2. Bottom View
YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More informationGreen. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements
More informationPin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel
YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
More information2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information
YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
More informationTop View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
6V P-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits BV SS -6V R S(ON) Max I T C = +25 C mω @ V = -V -4 4mΩ @ V = -4.5V -2 Low On-Resistance Low Input Capacitance Totally Lead-Free &
More informationS S. Top View Bottom View
YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
More information-10.1A -8.8A. Top View Internal Schematic. Part Number Qualification Case Packaging DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel
NEW PROUCT P-CHNNEL ENHNCEMENT MOE MOFET Product ummary Features and Benefits BV R (ON) Max T = +25 C % Unclamped nductive witch (U) Test in Production Low nput Capacitance -4V mω @ V G = -V 5mΩ @ V G
More informationBottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
More information-3.4A -3.0A. Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel
Product ummary BV -4V (O) max 8mΩ @ V G = -V mω @ V G = -4.5V I max T = +25-3.4-3. MP45Q 4V P-HL HMT MO MOFT Features and Benefits Low On-esistance Low Input apacitance Fast witching peed Low Input/Output
More information-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
More informationGreen. Features. I D T C = +25 C (Note 10) 100A 95A. Pin1. Top View Pin Configuration
Product ummary BV V () Max.mΩ @ V G = V.mΩ @ V G = V escription and pplications I T = + (ote ) 9 This MFT is designed to meet the stringent requirements of automotive applications. It is qualified to -Q,
More informationFeatures. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration
DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V
More informationFeatures. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel
NE PROUCT NCE INFORMTION MHC7LS COMPLEMENTRY ENHNCEMENT MOE MOSFET H-BRIGE Product Summary evice (BR)SS R S(ON) Max N-Channel P-Channel - I Max T = 5 C mω @ =. mω @ =.5.7 7mΩ @ = -. 5mΩ @ = -.5. Features
More informationTop View Bottom View Internal Schematic (Top View)
W P M3415FY4Q P-H HM M MF Product ummary B) -16 ) max 39mΩ @ = -4.5 52mΩ @ = -2.5 65mΩ @ = -1.8 escription and pplications max = +25-2.5-2.1-1.8 his MF is designed to minimize the on-state resistance ))
More informationDrain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel
BSN2 N-HANNEL ENHANEMENT MODE FIELD MOSFET Product Summary Features and Benefits NEW PRODUT V (BR)DSS 5V Description R DS(ON) I D T A = +25 1.8 @ V = 1V 5mA 2. @ V = 4.5V 45mA This new generation MOSFET
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationFeatures. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel
N-CHANNEL ENHANCEMENT MOE FEL MOSFET Product Summary BV SS R S(ON) Package T A = +25 C 6V Ω @ V S = V escription This new generation uses advanced planar technology MOSFET, provide excellent high voltage
More informationI D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel
DVNCE INFORMTION V COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max I D T = +5 C Q N-Channel V mω @ V = V.5 55mΩ @ V =.5V 5. Q P-Channel -V mω @ V = -V -3.9 3mΩ @ V =
More informationI D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description
More information(Notes 6 & 8) Top View
NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N
More informationDMN2400UFB4. Features. Mechanical Data. Ordering Information (Note 4) 20V N-CHANNEL ENHANCEMENT MODE MOSFET DMN2400UFB4
2V N-HNNL NHMN MO MOF Features Mechanical ata Low On-esistance Low ate hreshold Voltage Low nput apacitance Fast witching peed Low nput/output Leakage ltra-mall urface Mount Package ltra-low Package Profile,.4mm
More information430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
More information-6.0A -5.2A TSOT26 1. Top View Pin-Out. Part Number Case Packaging DMP2035UVT-7 TSOT26 3,000/Tape & Reel DMP2035UVT-13 TSOT26 10,000/Tape & Reel
YM -2V P-HL HM MO MOSF Product Summary Features and Benefits BV SS -2V S(O) Max 35mΩ @ V S = -4.5V 45mΩ @ V S = -2.5V I = +25-6. -5.2 Low Input apacitance Low On-esistance Fast Switching Speed S Protected
More informationGreen. TO251 Bottom View. Part Number Case Packaging MBR2045CTI TO Pieces/Tube
FMT Green 20 SHTTKY B TF Product Summary (Per Leg) escription This Schottky Barrier ectifier has been designed to meet requirements of onsumer grade pplications. pplications M () Polarity Protection iode
More informationI D max T A = +25 C (Note 6)
YM M27MQ 2 MPMY PI HM M MF Product ummary evice B ) max I max = +25 ote 6) Q1 2 Ω @ = 4.5 1.34.5Ω @ = 2.5 1.65 Q2-2.7Ω @ = -4.5-1.14.9Ω @ = -2.5 -.94 escription and pplications his MF has been designed
More informationFDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
More informationApplications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V
FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
More informationApplications. Bottom S S S. Pin 1 G D D D
FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationFDS V P-Channel PowerTrench MOSFET
F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current
More informationQ 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units
BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair
More informationistributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance
More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationNOT RECOMMENDED FOR NEW DESIGN USE DMC2053UVT. Features -3.1A -2.0A. Pin Configuration
YM O OMMDD FO W DSIG US DM253UV OMPLMY PI HM MOD MOSF Product Summary Device BV DSS DS(O) Q 2V Q2-2V Description = +25 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS = -.8V
More informationFDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET
FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationSOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationNDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NT355L N-Channel Logic Level Enhancement Mode Field Effect Transistor eneral escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using ON emiconductor's
More informationNTMFS4119NT3G. Power MOSFET. 30 V, 30 A, Single N Channel, SO 8 Flat Lead
Power MOFET V,, ingle N Channel, O 8 Flat Lead Features Low R (on) Fast witching Times Low Inductance O 8 Package These are Pb Free evices V (BR) R (on) Typ I Max (Note ) pplications Notebooks, raphics
More informationNTMFS4825NFET3G. Power MOSFET 30 V, 171 A, Single N Channel, SO 8 FL
Power MOFET 3 V, 7 A, ingle N Channel, O 8 FL Features Low R (on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Includes chottky iode Optimized Gate Charge to Minimize witching
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More informationSingle N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units
F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has
More informationSOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary
More informationNTMF8N THERMAL REITANCE RATIN Rating ymbol Max Unit Junction-to-Case (rain) R JC. C/W Junction-to-Ambient - teady tate (Note ) R JA Junction-to-Ambien
NTMF8N Power MOFET V, A, ingle N-Channel, O-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with tandard O-8 Package Footprint New Package Provides Capability of Inspection
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationD D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V
FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM 5 V, A, 3.5 mω Features ual Cool TM Top ide Cooling PQFN package Max r (on) = 3.5 mω at V G = V, I =.5 A Max r (on) =.7 mω at V G =.5 V, I = 8 A High
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More informationLOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View
DSS46U LOW V CE(ST) NPN SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage, V CE(ST) Complementary PNP Type vailable (DSS56U) Ultra-Small Surface
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationFeatures 3.3 A, 20 V. V F < A (T J = 125 o C). V F < A. V F < A. TA=25 o C unless otherwise noted
FFSP Integrated P-hannel MOSFET and Schottky iode October FFSP General escription The FFSP combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop
More informationFDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
More informationE 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2
OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification
More informationAP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )
UNIVERSAL DC/DC CONVERTER Description Pin Assignments The Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal
More informationA product Line of Diodes Incorporated. Description
product Line of PI53157 OTiny TM Low Voltage Dual PDT nalog witch 2:1 Mux/DeMux Bus witch Features CMO Technology for Bus and nalog pplications Low On-Resistance: 8Ω at 3.0V Wide Range: 1.65V to 5.5V Rail-to-Rail
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More information74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6
DUAL BUFFERS Description The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The is composed of two buffers with standard
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationLead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified
Lead-free Green MMDT2227M OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationFDV301N Digital FET, N-Channel
FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This
More informationAZ1117C. Description. Features. Applications. Pin Assignments. A Product Line of. Diodes Incorporated LOW DROPOUT LINEAR REGULATOR AZ1117C
LOW DROPOUT LINEAR REGULATOR Description Features The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical.
More informationCharacteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationN-Channel 80-V (D-S) MOSFET
N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM
More informationNDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
March 996 NS8947 ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationFeatures V F < A (T J = 125 C) V F < A V F < A. TA=25 o C unless otherwise noted
FFSP June Integrated V P-hannel PowerTrench MOSFET and Schottky iode FFSP General escription The FFSP combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward
More informationFeatures. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted
F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially
More information