FDV301N Digital FET, N-Channel
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1 FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. Features V, A continuous, A Peak. R S(ON) = V GS =.7 V R S(ON) = V GS =. V. Very low level gate drive requirements allowing direct operation in V circuits. V GS(th) <.6V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one MOS FET. SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- SOIC-6 Mark: INVERTER APPLICATION Vcc OUT IN G S G S GN Absolute Maximum Ratings T A = o C unless other wise noted Symbol Parameter FVN Units V SS, V CC rain-source Voltage, Power Supply Voltage V V GSS, V I Gate-Source Voltage, V IN 8 V I, I O rain/output Current - Continuous A P Maximum Power issipation W,T STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model (pf / Ohm) THERMAL CHARACTERISTICS 6. kv R θja Thermal Resistance, Junction-to-Ambient 7 C/W 9 Semiconductor Components Industries, LLC. October-7, Rev. 6 Publication Order Number: FVN/
2 Inverter Electrical Characteristics (T A = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units I O (off) Zero Input Voltage Output Current V CC = V, V I = V µa V I (off) Input Voltage V CC = V, I O = µa V V I (on) V O =. V, I O =. A V R O (on) Output to Ground Resistance V I =.7 V, I O = A Ω Electrical Characteristics (T A = O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = µa V BV SS / Breakdown Voltage Temp. Coefficient I = µa, Referenced to o C mv / o C I SS Zero Gate Voltage rain Current V S = V, V GS = V µa = C µa I GSS Gate - Body Leakage Current V GS = 8 V, V S = V na ON CHARACTERISTICS (Note) V GS(th) / Gate Threshold Voltage Temp. Coefficient I = µa, Referenced to o C -. mv / o C V GS(th) Gate Threshold Voltage V S = V GS, I = µa V R S(ON) Static rain-source On-Resistance V GS =.7 V, I = A.8 Ω = C 6. 9 V GS =. V, I =. A. I (ON) On-State rain Current V GS =.7 V, V S = V A g FS Forward Transconductance V S = V, I =. A S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 9. pf C oss Output Capacitance f =. MHz 6 pf C rss Reverse Transfer Capacitance. pf SWITCHING CHARACTERISTICS (Note) t (on) Turn - On elay Time V = 6 V, I = A,. 8 ns t r Turn - On Rise Time V GS =. V, R GEN = Ω 6 ns t (off) Turn - Off elay Time. 8 ns t f Turn - Off Fall Time. 8 ns Q g Total Gate Charge V S = V, I = A,.9.7 nc Q gs Gate-Source Charge V GS =. V nc Q gd Gate-rain Charge.7 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current 9 A V S rain-source iode Forward Voltage V GS = V, I S = 9 A (Note).8. V Note: Pulse Test: Pulse Width < µs, uty Cycle <.%.
3 S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A)... V =.V GS R S(on ), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 V =.V GS V, RAIN-SOURCE VOLTAGE (V) S.6... I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = A V GS =.7 V T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) 9 6 C C.. V GS, GATE TO SOURCE VOLTAGE (V) I = A Figure. On-Resistance Variation with Temperature. Figure. On Resistance Variation with Gate-To-Source Voltage. I, RAIN CURRENT (A).. V =.V S T = - C J C C.. V, GATE TO SOURCE VOLTAGE (V) GS I, REVERSE RAIN CURRENT (A)... V GS = V T = C J C - C V, BOY IOE FORWAR VOLTAGE (V) S Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature.
4 Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) I = A....6 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. V S = V V V CAPACITANCE (pf) f = MHz V GS = V. V, RAIN TO SOURCE VOLTAGE (V) S Figure 8. Capacitance Characteristics. C iss C oss C rss I, RAIN CURRENT (A)... RS(ON) LIMIT V GS =.7V SINGLE PULSE R θ JA = 7 C/W T A = C. V, RAI N-SOURCE VOLTAGE (V) S C s s ms ms POWER (W)... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =7 C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. = r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse R θja (t) = r(t) * R θja R θja = 7 C/W - T = P * R (t) A θja uty Cycle, = t /t..... t, TIME (sec) P(pk) t t Figure. Transient Thermal Response Curve.
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
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More information= 25 o C unless other wise noted Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage V. Gate-Source Voltage 8-8 V I D
November 998 FG63C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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