Complementary MOSFET Half-Bridge (N- and P-Channel)

Transcription

1 New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) V GS = 4.5 V V GS =.5 V 6. V GS = 4.5 V V GS =.5 V 3.5 S S SO-8 8 G G S G 4 5 G Top View S Parameter Symbol N-Channel P-Channel Unit rain-source Voltage V S V Gate-Source Voltage V GS T A = 5 C Continuous rain Current (T J = 5 C) a, b I T A = 7 C A Pulsed rain Current I M 3 Continuous Source Current (iode Conduction) a, b I S.7.7 T A = 5 C.5 Maximum Power issipation a, b P W T A = 7 C.6 Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C N-Channel P- Channel Parameter Symbol Typ Max Typ Max Unit Maximum Junction-to-Ambient a t sec Steady-State R thja C/W Maximum Junction-to-Foot Steady-State R thjc 7 6 Notes a. Surface Mounted on FR4 Board. b. t sec ocument Number: 788 S-69 Rev. A, 6-Apr-99 FaxBack

2 Si45Y New Product Static Parameter Symbol Test Condition Min Typ a Max Unit V S = V GS, I = 5 A N-Ch.6 Gate Threshold Voltage V GS(th) V S = V GS, I = 5 A P-Ch.6 N-Ch Gate-Body Leakage I GSS V S = V, V GS = V P-Ch V S = 6 V, V GS = V N-Ch V S = 6 V, V GS = V P-Ch Zero Gate Voltage rain Current I SS V S = 6 V, V GS = V, T J = 55 C N-Ch 5 V na A V S = 6 V, V GS = V, T J = 55 C P-Ch 5 V S = 5 V, V GS = 4.5 V N-Ch 3 On-State rain Current b I (on) V S = 5 V, V GS = 4.5 V P-Ch A V GS = 4.5 V, I = 7. A N-Ch..3 V GS = 4.5 V, I = 4.5 A P-Ch rain-source On-State Resistance b r S(on) V GS =.5 V, I = 6. A N-Ch.3.4 V GS =.5 V, I = 3.5 A P-Ch.87. V S = 5 V, I = 7. A N-Ch Forward Transconductance b g fs V S = 5 V, I = 4.5 A P-Ch S I S =.7 A, V GS = V N-Ch.7. iode Forward Voltage b V S I S =.7 A, V GS = V P-Ch.8. V ynamic a N-Ch 3 5 Total Gate Charge Q g P-Ch N-Channel V S = V, V GS = 4.5 V, I = 3.5 A N-Ch 3. Gate-Source Charge Q gs P-Channel P-Ch.8 V S = V, V GS = V, I = A N-Ch 3.3 Gate-rain Charge Q gd P-Ch.7 nc N-Ch 4 Turn-On elay Time t d(on) P-Ch 5 3 N-Channel = = N-Ch 4 8 Rise Time t V r V, R L I A, V GEN = 4.5 V, R G = 6 P-Ch 3 6 P-Channel N-Ch 5 Turn-Off elay Time t d(off) V V = V, R L = P-Ch 57 I A, V GEN = 4.5 V, R G = 6 N-Ch 4 Fall Time t f P-Ch 4 8 ns Source-rain Reverse Recovery Time t rr I F =.7 A, di/dt = A/ s N-Ch 4 8 P-Ch 4 8 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle %. FaxBack ocument Number: 788 S-69 Rev. A, 6-Apr-99

3 New Product Si45Y 3 Output Characteristics V GS = 5 thru 3 V.5 V 3 Transfer Characteristics 4 4 rain Current (A) 8 V rain Current (A) 8 T C = 5 C I 6.5 V I 6 5 C 55 C V S rain-to-source Voltage (V) V GS Gate-to-Source Voltage (V).8 On-Resistance vs. rain Current Capacitance 8 rs(on) On-Resistance ( ).6.4. V GS =.5 V V GS = 4.5 V C Capacitance (pf) C oss C iss I rain Current (A) C rss V S rain-to-source Voltage (V) 4.5 Gate Charge.8 On-Resistance vs. Junction Temperature Gate-to-Source Voltage (V) V GS V S = V I = 4.5 A rs(on) On-Resistance ( ) (Normalized) V GS = 4.5 V I = 4.5 A Q g Total Gate Charge (nc) T J Junction Temperature ( C) ocument Number: 788 S-69 Rev. A, 6-Apr-99 FaxBack

4 Si45Y New Product Source-rain iode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 5 C T J = 5 C rs(on) I = 4.5 A V S Source-to-rain Voltage (V) V GS Gate-to-Source Voltage (V).4 Threshold Voltage 8 Single Pulse Power, Juncion-To-Ambient. I = 5 A 6 VGS(th)Variance (V)...4 Power (W) T J Temperature ( C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance.. 4 uty Cycle = Single Pulse Notes: P M t t t. uty Cycle, = t. Per Unit Base = R thja = 73 C/W 3. T JM T A = P M Z (t) thja 4. Surface Mounted 3 6 Square Wave Pulse uration (sec) FaxBack ocument Number: 788 S-69 Rev. A, 6-Apr-99

5 New Product Si45Y Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse. 4 3 Square Wave Pulse uration (sec) Output Characteristics Transfer Characteristics rain Current (A) V V GS = 5, 4.5, 4, 3.5 V.5 V V rain Current (A) 6 8 T C = 55 C 5 C 5 C I 4.5 V I V S rain-to-source Voltage (V) V GS Gate-to-Source Voltage (V). On-Resistance vs. rain Current 5 Capacitance rs(on) On-Resistance ( ) V GS =.5 V V GS = 4.5 V V GS =.7 V C Capacitance (pf) C oss C iss I rain Current (A) C rss V S rain-to-source Voltage (V) ocument Number: 788 S-69 Rev. A, 6-Apr-99 FaxBack

6 Si45Y New Product 5 Gate Charge.6 On-Resistance vs. Junction Temperature Gate-to-Source Voltage (V) V GS 4 3 V S = V I = 4.4 A rs(on) On-Resistance ( ) (Normalized) V GS = 4.5 V I = 4.4 A Q g Total Gate Charge (nc) T J Junction Temperature ( C) Source-rain iode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 5 C T J = 5 C rs(on) On-Resistance ( ) I = 4.4 A V S Source-to-rain Voltage (V) V GS Gate-to-Source Voltage (V).6 Threshold Voltage 8 Single Pulse Power, Juncion-To-Ambient.4 6 VGS(th)Variance (V)... I = 5 A Power (W) T J Temperature ( C) Time (sec) FaxBack ocument Number: 788 S-69 Rev. A, 6-Apr-99

7 New Product Si45Y Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance.. 4 uty Cycle = Single Pulse Notes: P M t t t. uty Cycle, = t. Per Unit Base = R thja = 73 C/W 3. T JM T A = P M Z (t) thja 4. Surface Mounted 3 6 Square Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse 3 Square Wave Pulse uration (sec) ocument Number: 788 S-69 Rev. A, 6-Apr-99 FaxBack

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