Monolithic N-Channel JFET Dual

Transcription

1 SST Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Typ (pa) V GS V GS Max (mv) to 6. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise High CMRR: 9 db Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy High-Speed Performance Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters The SST is a monolithic high-speed dual JFET mounted in a single SO- package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The SO- package is available with tape-and-reel options to support automated assembly (see Packaging Information). For similar products in TO-7 packaging, see the U data sheet. Narrow Body SOIC S NC D 7 G G 3 6 D NC S Top View Gate-Drain, Gate-Source Voltage V Gate Current ma Lead Temperature ( / 6 from case for sec.) C Storage Temperature to C Operating Junction Temperature to C Power Dissipation : Per Side a mw Total a mw Notes a. Derate. mw/ C above C For applications information see AN. Document Number: 7 S-3 Rev. E, -Jun- -

2 SST Static Limits Parameter Symbol Test Conditions Min Typ a Max Unit Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V 3 Gate-Source Cutoff Voltage V GS(off) V DS = V, I D = na 3. 6 Saturation Drain Current b I DSS V DS = V, V GS = V 6 3 ma V GS = V, V DS = V pa Gate Reverse Current I GSS T A = C. na V DG = V, I D = ma pa Gate Operating Current I G T A = C. na Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Forward Transconductance Output Conductance Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance g os g os C iss C rss V DS = V, I D = ma f = khz V DS = V, I D = ma f = MHz V DS = V, I D = ma f = MHz Equivalent Input Noise Voltage e n V DS = V, I D = ma f = khz Matching. 6 9 ms V S. ms 3 S Differential Gate-Source Voltage V GS V GS V DG = V, I D = ma 7 mv 3. pf nv Hz Gate-Source Voltage Differential Change with Temperature V GS V GS T V DG = V, I D = ma T A = to C V/ C Saturation Drain Current Ratio c I DSS I DSS V DS = V, V GS = V.9 Transconductance Ratio c V DS = V, I D = ma f = khz.9 Common Mode Rejection Ratio CMRR V DG = to V, I D = ma 9 db Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNZ b. Pulse test: PW 3 s duty cycle 3%. c. Assumes smaller value in the numerator. - Document Number: 7 S-3 Rev. E, -Jun-

3 SST I DSS Saturation Drain Current (ma) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage I V DS = V, V GS = V DG = V, V GS = V f = khz I DSS 3 V GS(off) Gate-Source Cutoff Voltage (V) Forward Transconductance (ms) I G Gate Leakage na na na pa pa pa. pa T A = C T A = C Gate Leakage Current ma A I I D = ma A ma ma I C I C V DG Drain-Gate Voltage (V) 6 V GS(off) = V V GS = V V GS = V. V. V. V.6 V. V. V. V.6 V. V. V. V 6. V 6. V 3 V GS = V. V.6 V. V. V. V. V.6 V 6 V GS(off) = V V GS = V. V. V. V.6 V. V. V. V Document Number: 7 S-3 Rev. E, -Jun- -3

4 SST 6 Transfer Characteristics t V DS = V Gate-Source Differential Voltage V DG = V T A = C T A = C C (mv) V GS V GS C V GS Gate-Source Voltage (V) Voltage Differential with Temperature Common Mode Rejection Ratio ( V/ C ) V DG = V T A = to C T A = to C 3 CMRR = log V DG V GS V GS V GS V GS CMRR (db) 9 V DG = V V 7.. Circuit Voltage Gain On-Resistance A V Voltage Gain 6 R L A V R L g os Assume V DD = V, V DS = V R L V V I D r DS(on) Drain-Source On-Resistance ( Ω ) 6 V... - Document Number: 7 S-3 Rev. E, -Jun-

5 SST Ciss Input Capacitance (pf) 6 Input Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V 6 Crss Reverse Feedback Capacitance (pf) 3 Reverse Feedback Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V 6 V GS Gate-Source Voltage (V) V GS Gate-Source Voltage (V) Output Conductance Equivalent Input Noise Voltage vs. Frequency g os Output Conductance (µs) 3 C V DS = V f = khz T A = C C en Noise Voltage nv / Hz 6 V DS = V I ma V GS = V. k k k f Frequency (Hz) Forward Transconductance On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Forward Transconductance (ms) 6 C T A = C V DS = V f = khz C. r DS(on) Drain-Source On-Resistance ( Ω ) r DS g os r I D = ma, V GS = V g V DG = V, V GS = V, f = khz 3 gos Output Conductance ( S) V GS(off) Gate-Source Cutoff Voltage (V) Document Number: 7 S-3 Rev. E, -Jun- -

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