Battery Disconnect Switch

Transcription

1 New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted Gate with Internal MOSFET Ultra Low Power Consumption in Off State (Leakage Current Only) Logic Supply Voltage is Not Required The is a level-shifted p-channel MOSFET. Operating two in a series, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The is available in a 8-pin SOIC package and is rated for the commercial temperature range of 5 to 85 C. G IN D ESD Logic and Gate Level Shift GND 8 V GS Limiter S Half a circuit shown here. Document Number: 706 S Rev. A, 0-Dec-98 -

2 New Product Voltage Referenced to GND V S, V a D V to 30 V V SD V to 30 V V IN, V IN V to 5 V V GS V Storage Temperature to 50 C Power Dissipation b (t = 0 sec) W (t = steady state) W Thermal Resistance Max Junction-Ambient b (t = 0 sec) C/W (t = steady state) C/W Max Junction-Foot (t = steady state) C/W Notes a. V SD 30 V DC b. Device mounted with all leads soldered to x FR4 with laminated copper PC board. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V S, V D V to 30 V V IN, V IN V to 3. V I DS A to 6 A Operating Temperature Range to 85 C Junction Temperature to 50 C Limits Parameter Symbol Specific Test Conditions Temp a Min b Typ c Max b Unit On-Resistance r DS V S = 0 V, I D = A, V IN = H Room Leakage Current I DS(off) V DS = 0 V Room Power Consumption I S GND (off) I S GND (on) V S = 7 V Input Voltage Low V INL V S = 0 V Input Voltage High V INH Room Room. 6 Full 0.8 Full.5 Input Leakage Current I INH V IN = 5.0 V Full 5 A Turn-On Delay IN t ON(IN) Room Turn-Off Delay to D or S t OFF(IN) V S = 0 V, R L = 5, Test Circuit Rise Time t RISE A V Room.5 3 s Room.5 3 Fall Time t FALL Room ns Voltage Across Pin 6 and 7 V GS V S = 30 V Room 0. 8 Forward Diode V SD I D = A Room. Notes a. Room = 5 C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. V - Document Number: 706 S Rev. A, 0-Dec-98

3 New Product 0 V SOURCE 50% 50% 0 V V IN DRAIN 90% 90% 5 V D 0% 0% t ON(IN) t OFF(IN) t r t f TEST CIRCUIT SO-8 IN G S S GND D D D V IN Switch 0 Off 0 Off On Order Number: On Pin Number Symbol Description 5, 6 D Drain connection for MOSFET. 8 GND Ground IN Logic input, IN. High level turns on the switch. G Gate output to MOSFET. S Source connection for MOSFET. Document Number: 706 S Rev. A, 0-Dec-98-3

4 New Product On-Resistance vs. Drain Current 0.0 On-Resistance vs. Source Voltage rds(on) Drain-Source On-Resistance ( ) V S = 0 V rds(on) Drain-Source On-Resistance ( ) I S = A I S (A) V S (V).8 Normalized On-Resistance vs. Junction Temperature 500 Output Capacitance vs. Source Voltage rds(on) On-Resistance ( ) (Normalized) V S = 0 V I S = A COSS(pF) V IN = 0 V T J Junction Temperature ( C) V S (V) Off-Supply Current vs. Source Voltage On-Supply Current vs. Source Voltage T J = 50 C T J = 50 C T J = 5 C A) I S ( 0.00 I S ( A) T J = 5 C V S (V) V S (V) -4 Document Number: 706 S Rev. A, 0-Dec-98

5 New Product 0 Drain-Source Diode Forward Voltage.8 Input Voltage Trip Point vs. Temperature.6 Source Current (A) T J = 50 C T J = 5 C V IN Trip Point.4. V S = 0 V V S = V I S V SD Source-to-Drain Voltage (V) T A = Ambient Temperature ( C) 4.0 Turn-On Delay vs. Temperature.0 Turn-off Delay vs. Temperature V S = 0 V Rl = 5 V S = 0 V Rl = t d(on) ( s) 3..8 t d(on) ( s) Temperature ( C) Temperature ( C).8 Rise Time vs. Temperature 80 Fall Time vs. Temperature.6 V S = 0 V Rl = 5 70 V S = 0 V Rl = trise ( s). t fall (ns) Temperature ( C) Temperature ( C) Document Number: 706 S Rev. A, 0-Dec-98-5

6 New Product 00 Single Pulse Power, Junction-to-Ambient 00 Single Pulse Power, Junction-to-Foot Power (W) Power (W) Time (sec) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = Notes: P DM 0.05 t t t 0.0. Duty Cycle, D = t. Per Unit Base = R thja = 63 C/W 3. T JM T A = P DM Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0. Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) -6 Document Number: 706 S Rev. A, 0-Dec-98

7 New Product AC/DC Display Power Charger Si645 Battery-A Si645 Battery-B Figure : High-Performance Laptop PC Document Number: 706 S Rev. A, 0-Dec-98-7

8 New Product Si4435DY Battery-A Si4435DY Battery-B 5 V DC-DC 3.3 V Converter Figure : AC/DC Charger Display Power Battery 5 V DC-DC 3.3 V Converter Figure 3: Low-Cost Laptop PC -8 Document Number: 706 S Rev. A, 0-Dec-98

9 New Product 5-V Output 3.3 V DC-DC Converter 3.3-V Output 5 V Figure 4: ACPI Power Saving Switcher Document Number: 706 S Rev. A, 0-Dec-98-9

10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 8-Jul-08