Monolithic N-Channel JFET Dual

Size: px
Start display at page:

Download "Monolithic N-Channel JFET Dual"

Transcription

1 New Product SST9NL/U9NL Monolithic N-Channel JFET Dual PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS - V GS Max (mv) -. to FEATURES BENEFITS APPLICATIONS Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise: 9 nv Hz High CMRR: db External Substrate Bias Avoids Latchup Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters DESCRIPTION The low cost SST9NL and U9NL JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with I G guaranteed at V DG = V. Pins and on the SST9NL and pin on the U9NL part numbers enable the substrate to be connected to a positive, external bias (V DD ) to avoid latchup. Narrow Body SOIC The U9NL in the hermetically-sealed TO-7 package is available with full military processing. The SST9NL in the SO- package provides ease of manufacturing. The symmetrical pinout prevents improper orientation. The SST9NL is available with tape-and-reel options for compatibility with automatic assembly methods. TO-7 S SUBSTRATE S G D 7 G 7 G 6 D SUBSTRATE S D 6 D Top View Marking Codes: SST9NL - 9NL G S CASE, SUBSTRATE Top View U9NL ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage V Gate Current ma Lead Temperature ( / 6 from case for sec.) C Storage Temperature to C Operating Junction Temperature to C Document Number: 77 S-7 Rev. A, 7-Feb- Power Dissipation : Per Side a mw Total b mw Notes a. Derate mw/ C above C b. Derate mw/ C above C 7-

2 SST9NL/U9NL New Product SPECIFICATIONS (T A = C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = - A, V DS = V - -7 Gate-Source Cutoff Voltage V GS(off) V DS = V, = na Saturation Drain Current b SS V DS = V, V GS = V. ma Gate Reverse Current I GSS T A = C - - na V GS = - V, V DS = V - - pa Gate Operating Current I G T A = C -. - na V DG = V, = A - - pa V V DG = V, = A Gate-Source Voltage V GS = A -. V Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V Dynamic Common-Source Forward Transconductance g fs VDS = V, V GS = V f = khz Common-Source Output Conductance g os..6 ms S Common-Source Input Capacitance C iss V DS = V, V GS = V Common-Source C Reverse Transfer Capacitance rss f = MHz. pf Drain-Gate Capacitance C dg V DG = V, I S =, f = MHz. Equivalent Input Noise Voltage e n V DS = V, V GS = V, f = khz Noise Figure Matching NF V DS = V, V GS = V f = Hz, R G = M nv Hz. db Differential Gate-Source Voltage V GS V GS V DG = V, = A mv Gate-Source Voltage Differential Change with Temperature V GS V GS T V DG = V, = A T A = - to C V/ C Saturation Drain Current Ratio SS SS V DS = V, V GS = V..97 Transconductance Ratio g fs g fs Differential Output Conductance g os g os V DS = V, = A f = khz..97. S Differential Gate Current I G I G V DG = V, = A T A = C. na Common Mode Rejection Ratio CMRR V DG = to V, = A db Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP b. Pulse test: PW s duty cycle %. 7- Document Number: 77 S-7 Rev. A, 7-Feb-

3 New Product SST9NL/U9NL TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage na Gate Leakage Current SS - Saturation Drain Current (ma) g fs SS V DS = V, V GS = V g V DG = V, V GS = V f = khz.6... g fs - Forward Transconductance (ms) I G - Gate Leakage na na pa pa pa I = A T A = C I C A A A I C T A = C V GS(off) - Gate-Source Cutoff Voltage (V). pa V DG - Drain-Gate Voltage (V) V GS(off) = - V V GS(off) = - V V GS = V -. V V GS = V -. V -. V -.6 V -.6 V -.9 V -. V -. V -. V -. V -. V -. V -. V -. V -. V 6 6. V GS(off) = - V V GS(off) = - V V GS = V -. V.6 V GS = V -. V. -.6 V.. -. V -.6 V -. V -. V V -. V -. V -. V. -. V. -. V -. V -.6 V -. V Document Number: 77 S-7 Rev. A, 7-Feb- 7-

4 SST9NL/U9NL New Product TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) V GS(off) = - V Transfer Characteristics V DS = V V DG = V T A = C Gate-Source Differential Voltage t T A = - C C (mv) V GS - V GS C V GS - Gate-Source Voltage (V) Voltage Differential with Temperature Common Mode Rejection Ratio V DG = V V GS - V GS ( V/ C ) T A = - to C T A = to C CMRR (db) CMRR = log V DG = - V - V V DG V GS - V GS Circuit Voltage Gain k On-Resistance A V - Voltage Gain 6. V GS(off) = - V A V g fs R L R L g os Assume V DD = V, V DS = V R L V - V. r DS(on) - Drain-Source On-Resistance ( Ω ) 6 V GS(off) = - V - V.. 7- Document Number: 77 S-7 Rev. A, 7-Feb-

5 New Product SST9NL/U9NL TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) - Input Capacitance (pf) Ciss 6 Common-Source Input Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V V GS - Gate-Source Voltage (V) - Reverse Feedback Capacitance (pf) Crss Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V V GS - Gate-Source Voltage (V) en - Noise Voltage nv / Hz 6 Equivalent Input Noise Voltage vs. Frequency V DS = ma V GS = V g os - Output Conductance (µs)..... Output Conductance V GS(off) = - V C T A = - C C V DS = V f = khz k k k f - Frequency (Hz)... Common-Source Forward Transconductance k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage g fs - Forward Transconductance (ms).... V GS(off) = - V C T A = - C C V DS = V f = khz.. r DS(on) - Drain-Source On-Resistance ( Ω ) 6 g os r DS r = A, V GS = V g V DS = V, V GS = V, f = khz gos- Output Conductance ( S) V GS(off) - Gate-Source Cutoff Voltage (V) Document Number: 77 S-7 Rev. A, 7-Feb- 7-

6 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: -Apr-

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual N98 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual N98 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual SST Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Typ (pa) V GS V GS Max (mv) to 6. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual N9 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise:

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

Monolithic N-Channel JFET Duals

Monolithic N-Channel JFET Duals Monolithic N-Channel JFET Duals N96/97/98/99 Part Number V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Max (pa) V GS V GS Max (mv) N96.7 to N97.7 to N98.7 to N99.7 to Monolithic Design High Slew Rate Low

More information

2N5545/46/47/JANTX/JANTXV

2N5545/46/47/JANTX/JANTXV N//7/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv) N. to.. N. to.. N7. to.. Features Benefits Applications

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113

J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113 N-Channel JFETs J SST J SST J SST Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) J/SST to 5 4 J/SST to 5 5 5 4 J/SST 5 4 Low On-Resistance: < Fast Switching t ON : 4 ns Low

More information

2N4856JAN/JANTX/JANTXV Series. N-Channel JFETs. Vishay Siliconix

2N4856JAN/JANTX/JANTXV Series. N-Channel JFETs. Vishay Siliconix N-Channel JFETs 2N4856JAN 2N4856JANTX 2N4856JANTX 2N4857JAN 2N4857JANTX 2N4857JANTX 2N4858JAN 2N4858JANTX 2N4858JANTX 2N4859JAN 2N4859JANTX 2N4859JANTX 2N4860JAN 2N4860JANTX 2N4860JANTX 2N4861JAN 2N4861JANTX

More information

N-Channel 20-, 30-, 40-V (D-S) MOSFETs

N-Channel 20-, 30-, 40-V (D-S) MOSFETs TNL/4L, VNL/LS N-Channel -, -, 4-V (D-S) MOSFETs Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) TNL. @ V GS = V.5 to.64 TN4L 4. @ V GS = V.5 to.64 VNL. @ V GS = V.8 to.5.64 VNLS. @

More information

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/

More information

N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) SDDE-/DE- Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5 5 @ V GS

More information

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SD3DE-.5 5 @ V

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

BF545A; BF545B; BF545C

BF545A; BF545B; BF545C Rev. 3 5 August 24 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic

More information

Complementary MOSFET Half-Bridge (N- and P-Channel)

Complementary MOSFET Half-Bridge (N- and P-Channel) New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep FEATURES Low noise Interchangeability of drain

More information

Current Sensing MOSFET, N-Channel 30-V (D-S)

Current Sensing MOSFET, N-Channel 30-V (D-S) New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary

More information

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors Small Signal Switching Diodes, High Voltage BAV7/8/9/20/2 Features Silicon Epitaxial Planar Diodes Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications

More information

High-Voltage Schottky Rectifier

High-Voltage Schottky Rectifier High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability

More information

Battery Disconnect Switch

Battery Disconnect Switch New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted

More information

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9

More information

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

N-Channel and P-Channel 20 V (D-S) MOSFET

N-Channel and P-Channel 20 V (D-S) MOSFET N-Channel and (D-) MOFET DECRIPTION The attached PICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMO. The subcircuit model is extracted and optimized

More information

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

Features. T A =25 o C unless otherwise noted

Features. T A =25 o C unless otherwise noted NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack Small Signal Schottky Diode Features For general purpose applications. This diode features very low turn-on voltage and fast switching. This device is pro- e2 tected by a PN junction guard ring against

More information

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1. M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology

More information

Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches Quad PT MO Analog witches Low On-Resistance: Low Leakage: 8 pa Low Power onsumption:.2 mw Fast witching Action t ON : 1 ns Low harge Injection Q: 1 p G21A/G22 Upgrades TTL/MO-ompatible Logic ingle upply

More information

Data Sheet BUY25CS54A-01

Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS Low R DS(on) Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm V GS = -10V, V DS = 250V V GS = -15V, V DS = 250V V GS = -15V, V DS = 120V V GS = -20V,

More information

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1. M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.

More information

Dual N-channel field-effect transistor. Two N-channel symmetrical junction field-effect transistors in a SOT363 package.

Dual N-channel field-effect transistor. Two N-channel symmetrical junction field-effect transistors in a SOT363 package. Rev. 2 15 September 211 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to

More information

Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw DZ-V-Series Small Signal Zener Diodes, Dual Features These diodes are available in other case styles and configurations including: the dual diode common anode configuration with type designation AZ, the

More information

Metallized Polyester Film Capacitor Related Document: IEC

Metallized Polyester Film Capacitor Related Document: IEC Metallized Polyester Film Capacitor Related Document: IEC 6084- MKT 8 Dimensions in millimeters Ø d FEATURES Product is completely lead (Pb)-free Product is RoHS compliant 40.0 ±.0 L 40.0 ±.0 Max. d D

More information

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

More information

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S

More information

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200 SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications.±. Unit: mm Compact package suitable for high-density mounting Low

More information

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching. M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75) M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low

More information

BF556A; BF556B; BF556C

BF556A; BF556B; BF556C SOT23 Rev. 4 5 September 2 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES

More information

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation

More information

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul FEATURES Interchangeability of drain and source

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:

More information

Low VF SMD Schottky Barrier Diode

Low VF SMD Schottky Barrier Diode Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing

More information

Metallized Polypropylene Film Capacitor Related Document: IEC

Metallized Polypropylene Film Capacitor Related Document: IEC Metallized Polypropylene Film Capacitor Related Document: IEC 6084-6 MKP 84 L Max. Dimensions in millimeters W Max. Marking FEATURES Product is completely lead (Pb)-free Product is RoHS-compliant 0.6 pcm

More information

350mW, SMD Switching Diode

350mW, SMD Switching Diode 350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

TrenchMOS ultra low level FET

TrenchMOS ultra low level FET M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY

More information

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and

More information

BYW52 / 53 / 54 / 55 / 56

BYW52 / 53 / 54 / 55 / 56 Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N and PChannel 3 V (DS) MOSFET Si539DDL D 6 SOT363 SC7 Dual (6 leads) S 4 G 5 FEATURES TrenchFET power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999

More information

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105  Optocoupler, Phototransistor Output, no Base Connection MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide

More information

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel N8W-V Small Signal Fast Switching Diode Features These diodes are also available in other case styles including the DO case with the type designation N8, the e MiniMELF case with the type designation LL8,

More information

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology

More information

N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According

More information

200mA, 30V Schottky Barrier Diode

200mA, 30V Schottky Barrier Diode 200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3

More information

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard

More information

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800 TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7BFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : R DS(ON) =. Ω (max) (@V GS =.

More information

DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 23 22 Feb 19 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. APPLICATIONS

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching

More information

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level

More information