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Ralph Boone
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2 BT52C2V - BT52C39 SURFACE MOUNT ENER DIODE Features Planar Die Construction 5mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q11 Standards for High Reliability Mechanical Data Case: SOD-123 Case Material: Molded Plastic. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2D Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Polarity: Cathode Band Marking Information: See Electrical Characteristics Table and Page 4 Ordering Information: See Page 4 Weight:.1 grams (approximate) C H A B G E D SOD-123 Dim Min Max Typ A B C D E.55 G H J.1.5 α 8 All Dimensions in mm Maximum A = 25 C unless otherwise specified Characteristic Symbol Value Unit Forward I F = 1mA V F.9 V Power Dissipation (Note 1) P D 5 mw Thermal Resistance, Junction to Ambient Air (Note 1) R θja 25 C/W Operating and Storage Temperature Range T J, T STG -65 to +15 C Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x.87mm with pad areas 25mm No purposefully added lead. DS184 Rev of 4 BT52C2V - BT52C39

3 Electrical A = 25 C unless otherwise specified Table 1 Type Number (Note 3) Marking Codes ener Voltage Range (Note 4) Maximum ener Impedance (Note 3) Maximum Reverse Current (Note 4) I T I T I T I K I K I V R Typical Temperature I TC mv/ C Nom (V) Min (V) Max (V) ma Ω ma ua V Min Max ma BT52C2V WY BT52C2V4 WX BT52C2V7 W BT52C3V W BT52C3V3 W BT52C3V6 W BT52C3V9 W BT52C4V3 W6, UB BT52C4V7 W BT52C5V1 W BT52C5V6 W BT52C6V2 WA BT52C6V8 WB BT52C7V5 WC BT52C8V2 WD BT52C9V1 WE BT52C1 WF BT52C11 WG BT52C12 WH BT52C13 WI BT52C15 WJ BT52C16 WK BT52C18 WL BT52C2 WM BT52C22 WN BT52C24 WO BT52C27 WP BT52C3 WQ BT52C33 WR BT52C36 WS BT52C39 WT Test Current I TC Notes: 3. f = 1kHz. 4. Short duration pulse test used to minimize self-heating effect. DS184 Rev of 4 BT52C2V - BT52C39

4 .6 5 P D, POWER DISSIPATION (W) Note 1 R CURRENT (ma) I, ENE T A, AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs. Ambient Temperature V, ENER VOLTAGE (V) Fig. 2 ener Breakdown Characteristics 3 T = 25 C j C1 1 C12 I, ENER CURRENT (ma) 2 1 Test Current I 5mA C15 C18 C22 C27 Test Current I 2mA C33 C36 I, ENER CURRENT (ma) V, ENER VOLTAGE (V) Fig. 3 ener Breakdown Characteristics V, ENER VOLTAGE (V) Fig. 4 ener Breakdown Characteristics 1, T j = 25 C f = 1MHz C, TOTAL CAPACITANCE (pf) T 1 V = 2V R V = 1V R V = 2V R V = 1V R V, NOMINAL ENER VOLTAGE (V) Fig. 5 Total Capacitance vs. Nominal ener Voltage DS184 Rev of 4 BT52C2V - BT52C39

5 Ordering Information (Note 5) Device Packaging Shipping (Type Number)-7-F (Note 6) SOD-123 3/Tape & Reel (Type Number)-13-F (Note 7) SOD-123 1,/Tape & Reel Notes: 5. For packaging details, go to our website at 6. Add -7-F to the appropriate type number in Table 1 above, example: 6.2V ener = BT52C6V2-7-F. 7. Add -13-F to the appropriate type number in Table 1 above, example: 2V ener = BT52C2-13-F. Marking Information XX YM XX = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year ex: N = 22 M = Month ex: 9 = September Date Code Key Year Code J K L M N P R S T U V W X Y Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS184 Rev of 4 BT52C2V - BT52C39

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary