Low VF SMD Schottky Barrier Diode

Size: px
Start display at page:

Download "Low VF SMD Schottky Barrier Diode"

Transcription

1 Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-22, Method 28 guaranteed - High temperature soldering guaranteed: 26 o C/s - Weight:.8g (approximately) SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T A =25 unless otherwise noted) PARAMETER SYMBOL ALUE UNIT Power Dissipation P D mw Repetitive Peak Reverse oltage RRM 4 Reverse oltage R 4 Repetitive Peak Forward Current I FRM ma Mean Forward Current I O ma Non-Repetitive Peak Forward Surge Current (Note ) I FSM.6 A Thermal Resistance (Junction to Ambient) (Note 2) R θja 357 o C/W Junction and Storage Temperature Range T J, T STG -65 to +25 o C PARAMETER SYMBOL MIN MAX UNIT Reverse Breakdown oltage I R =μa (BR) 4 - I F =ma Forward oltage I F =ma I F =4mA Junction Capacitance R =, f=.mhz C J - 5. pf Reverse Recovery Time I F =I R =ma, R L =Ω, I RR =ma t rr - 5. ns Notes :. Test Condition : 8.3ms single half sine-wave superimposed on rated load Notes : 2. alid provided that electrodes are kept at ambient temperature I R Reverse Leakage Current R =3 -.2 F μa Document Number: DS_S46 ersion: F4

2 RATINGS AND CHARACTERISTICS CURES (TA=25 unless otherwise noted) Fig. Power Derating Curve Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg P D - Power Dissipation (mw) Peak Forward Surge Current (ma) ms single half sine wave T A - Ambient Temperature ( o C) Numbers of Cycles at 6 Hz Fig. 3 Typical Forward Characteristics Fig. 4 Typical Reverse Characteristics T A =25 C Instantaneous Forward Current (ma).... T A = -4 C T A = C T A = 25 C T A =7 C T A = 25 C I R - Instantaneous Reverse Current (ma). T A =7 C T A =25 C T A = C T A = -4 C F, Instantaneous Forward oltage (m) R - Reverse oltage () Fig. 5 Typical Total Capacitance S. Reverse oltage Fig. 6 Typical Transient Thermal Junction Capacitance (pf) 4 2 f=.mhz Transient Thermal Impedance ( o C/W) Reverse oltage () Pulse Duration (sec) Document Number: DS_S46 ersion: F4

3 ORDERING INFORMATION (Note ) PACKING CODE PACKAGE PACKING MARKING BAS4 BAS4-4 BAS4-5 BAS4-6 -xx G SOT-23 3K / 7" Reel Note : Part No. Suffix -xx would be used for special requirement EXAMPLE PREFERRED P/N DESCRIPTION BAS4 BAS4 Multiple manufacture BAS4 G BAS4 G Multiple manufacture Green compound BAS4-D G BAS4 -D G Define manufacture Green compound Document Number: DS_S46 ersion: F4

4 PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A B C D E F G H.55 REF. REF.22 REF.4 REF SUGGEST PAD LAYOUT DIM. Z X Y C E Unit(mm) Typ Unit(inch) Typ PIN CONFIGURATION Document Number: DS_S46 ersion: F4

5 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S46 ersion: F4

BAT54 / A / C / S Taiwan Semiconductor

BAT54 / A / C / S Taiwan Semiconductor 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant

More information

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode Small Signal Product mw Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish

More information

350mW, SMD Switching Diode

350mW, SMD Switching Diode 350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

200mA, 30V Schottky Barrier Diode

200mA, 30V Schottky Barrier Diode 200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free

More information

350mW, PNP Small Signal Transistor

350mW, PNP Small Signal Transistor 35mW, PNP Small Signal Traistor FEATURES - Epitaxial planar die cotruction - Surface device type mounting - Moisture seitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version

More information

200mW, PNP Small Signal Transistor

200mW, PNP Small Signal Transistor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and

More information

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and

More information

BC807-16W/-25W/-40W Taiwan Semiconductor

BC807-16W/-25W/-40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS

More information

High-Voltage Schottky Rectifier

High-Voltage Schottky Rectifier High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability

More information

Surface Mount ESD Capability Rectifiers

Surface Mount ESD Capability Rectifiers Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

More information

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

More information

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

FEATURES. Heatsink. 1 2 Pin 1 Pin 2 Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low

More information

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low

More information

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward

More information

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

More information

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 TO0B TMBS ITO0B FETURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation

More information

High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A PRIMARY CHARACTERISTICS I F(AV) A V RRM 00 V I FSM 00 A E AS 00 mj V F at I F = A 0.58 V T J max. 50 C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

BYW52 / 53 / 54 / 55 / 56

BYW52 / 53 / 54 / 55 / 56 Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A New Product V3000C, VF3000C, VB3000C & VI3000C Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.56 V at I F = 5 A TMBS TO0AB ITO0AB 3 3 V3000C VF3000C CASE TO63AB TO6AA 3 VB3000C

More information

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAT46 BAT46-TR or BAT46-TAP BAT46 Tape and Reel/Ammopack Small Signal Schottky Diode Features For general purpose applications. This diode features very low turn-on voltage and fast switching. This device is pro- e2 tected by a PN junction guard ring against

More information

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

BAV17/18/19/20/21. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors Small Signal Switching Diodes, High Voltage BAV7/8/9/20/2 Features Silicon Epitaxial Planar Diodes Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

BAT54XV2 Schottky Barrier Diode

BAT54XV2 Schottky Barrier Diode June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching

More information

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

More information

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these

More information

N-Channel ENHANCEMENT MODE POWER MOSFET 0V

N-Channel ENHANCEMENT MODE POWER MOSFET 0V PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION

More information

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge

More information

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these

More information

Industrial motor drives 175 C maximum operating junction temperature

Industrial motor drives 175 C maximum operating junction temperature Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally

More information

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature

Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes

More information

MUR1620CT MURB1620CT MURB1620CT-1

MUR1620CT MURB1620CT MURB1620CT-1 Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/

More information

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4 VISHAY 1N5550 to 1N5552 Standard Sinterglass Diode Features Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Medium switching for improved

More information

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors

TEMD5020. Silicon PIN Photodiode. Vishay Semiconductors TEMD52 Silicon PIN Photodiode Description TEMD52 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 4.4 mm 2 sensitive area, detecting

More information

xr SiC Series... 10A - 650V SiC Schottky with Surge Bypass Diode... UJDS06510T...

xr SiC Series... 10A - 650V SiC Schottky with Surge Bypass Diode... UJDS06510T... Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature

More information

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel N8W-V Small Signal Fast Switching Diode Features These diodes are also available in other case styles including the DO case with the type designation N8, the e MiniMELF case with the type designation LL8,

More information

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel Small Signal Schottky Diodes Features For general purpose applications These diodes feature very low turn-on voltage and fast switching. e2 These devices are protected by a PN junction guard ring against

More information

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS

More information

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box

More information

60EPU04PbF 60APU04PbF

60EPU04PbF 60APU04PbF Bulletin PD-080 08/05 60EPU04PbF 60APU04PbF Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency

More information

Surface Mount ESD Capability Rectifier

Surface Mount ESD Capability Rectifier Surface Mount ESD Capability Rectifier MSQPG, MSQPJ esmp Series op View Bottom View MicroSMP (DO-29AD) PRIMARY CHARACERISICS I F(AV).0 A V RRM 400 V, 600 V I FSM 5 A V F at I F =.0 A 0.99 V J max. 75 C

More information

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low

More information

Hyperfast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 8 A FRED Pt Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single

More information

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01 Bulletin PD-0745 rev. D 07/0 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced

More information

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

More information

Industrial motor drives 175 C maximum operating junction temperature

Industrial motor drives 175 C maximum operating junction temperature Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally

More information

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Single Phase Fast Recovery Bridge (Power Modules), 61 A VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single

More information

Part Number UJDS06508T

Part Number UJDS06508T Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature

More information

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units

Q 1 Q 2. Characteristic Symbol Value Units GSS I D. Characteristic Symbol Value Units BSS8DW OMPLEMENTARY PAIR ENHANEMENT MODE FIELD EFFET TRANSISTOR Features Low On-Resistance Low Gate Threshold oltage Low Input apacitance Fast Switching Speed Low Input/Output Leakage omplementary Pair

More information

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

More information

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W Silicon NPN Planar RF Transistor Features High power gain Low noise figure Lead (Pb)-free component Component in accordance to RoHS 00/95/EC and WEEE 00/96/EC e E B C Applications RF amplifier up to GHz

More information

N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM

More information

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors Small Signal Fast Switching Diodes Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices e2 N448 and N4448 respectively Lead (Pb)-free component Component in acc. to RoHS

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term

More information

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors

SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive

More information

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard

More information

Zener Diodes FEATURES APPLICATIONS

Zener Diodes FEATURES APPLICATIONS Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

Small Signal Zener Diodes

Small Signal Zener Diodes BZT-G-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT FEATURES Silicon planar power Zener diodes The Zener voltages are graded according to the international E standard AEC-Q

More information

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors.  FEATURES BENEFITS PRODUCT SUMMARY HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I

More information

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors Small Signal Switching Diodes, High Voltage BAV/0/02/03 Features Silicon Epitaxial Planar Diodes Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications

More information

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual DZ-G Series Small Signal Zener Diodes, Dual PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T specification Pulse current Int. construction Dual common cathode FEATURES Dual silicon

More information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual New Product SST9NL/U9NL Monolithic N-Channel JFET Dual PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS - V GS Max (mv) -. to -. - - FEATURES BENEFITS APPLICATIONS Anti Latchup

More information

BAV300 / 301 / 302 / 303

BAV300 / 301 / 302 / 303 Small Signal Switching Diodes, High Voltage BAV300 / 30 / 302 / 303 Features Silicon Epitaxial Planar Diodes Saving space e2 Hermetic sealed parts Fits onto SOD323 / SOT23 footprints Electrical data identical

More information

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel Small Signal Fast Switching Diodes Features Silicon epitaxial planar diodes Electrically equivalent diodes: e2 N448 - N94 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

More information

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BT52C2V - BT52C39 SURFACE MOUNT ENER DIODE Features Planar Die Construction

More information

Small Signal Zener Diodes

Small Signal Zener Diodes BZT-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T.; ma specification Pulse current Int. construction Single FEATURES Silicon planar Zener diodes

More information

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

I F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs

I F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

Features. T A =25 o C unless otherwise noted

Features. T A =25 o C unless otherwise noted NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

Silicon PIN Photodiode

Silicon PIN Photodiode TEMD5080X01 DESCRIPTION 20535 TEMD5080X01 is a PIN photodiode with enhanced blue sensitivity. The miniature surface mount package (SMD) include a chip with 7.7 mm 2 sensitive area, covered by clear epoxy.

More information

Switching Diode CD4148WN 1:6

Switching Diode CD4148WN 1:6 Switching Diode CD4148WN 1:6 Switching Diode CD4148WN FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 0805 Leadfree and RoHS compliance components For

More information

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MD088 Supersedes data of October 199 1996 Mar 19 FEATURES Low forward voltage Guard ring protected Very small SMD package. APPLICATIONS Ultra high-speed

More information

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19. DISCRETE SEMICONDUCTORS DATA SHEET M3D07 Supersedes data of 996 Mar 9 200 Sep 05 FEATURES Low forward voltage Guard ring protected Small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage

More information

200 mw Power derating above 25 o P. tot

200 mw Power derating above 25 o P. tot Switching Diode CD4148WSP FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 & 0603 Leadfree and RoHS compliance components For small signal switching

More information

Monolithic N-Channel JFET Dual

Monolithic N-Channel JFET Dual N98 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low

More information

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR3-35PT 4PT 45PT

More information

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package ) Qualified

More information